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MT41J512M14JE-125:A

产品描述DDR DRAM, 512MX4, CMOS, PBGA82, 12.50 X 15 MM, LEAD FREE, FBGA-82
产品类别存储    存储   
文件大小12MB,共210页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
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MT41J512M14JE-125:A概述

DDR DRAM, 512MX4, CMOS, PBGA82, 12.50 X 15 MM, LEAD FREE, FBGA-82

MT41J512M14JE-125:A规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明TFBGA,
针数82
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式MULTI BANK PAGE BURST
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PBGA-B82
JESD-609代码e1
长度15 mm
内存密度2147483648 bit
内存集成电路类型DDR DRAM
内存宽度4
功能数量1
端口数量1
端子数量82
字数536870912 words
字数代码512000000
工作模式SYNCHRONOUS
组织512MX4
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.2 mm
自我刷新YES
最大供电电压 (Vsup)1.575 V
最小供电电压 (Vsup)1.425 V
标称供电电压 (Vsup)1.5 V
表面贴装YES
技术CMOS
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度12.5 mm

文档预览

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2Gb: x4, x8, x16 DDR3 SDRAM
Features
DDR3 SDRAM
MT41J512M4 – 64 Meg x 4 x 8 Banks
MT41J256M8 – 32 Meg x 8 x 8 Banks
MT41J128M16 – 16 Meg x 16 x 8 Banks
Features
V
DD
= V
DDQ
= +1.5V ±0.075V
1.5V center-terminated push/pull I/O
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
CAS READ latency (CL): 5, 6, 7, 8, 9, 10, or 11
POSTED CAS ADDITIVE latency (AL): 0, CL - 1,
CL - 2
CAS WRITE latency (CWL): 5, 6, 7, 8, based on
t
CK
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
T
C
of 0°C to +95°C
64ms, 8192 cycle refresh at 0°C to +85°C
32ms, 8192 cycle refresh at +85°C to +95°C
Clock frequency range of 300–800 MHz
Self refresh temperature (SRT)
Write leveling
Multipurpose register
Output driver calibration
Options
1
Configuration
512 Meg x 4
256 Meg x 8
128 Meg x 16
FBGA package (Pb-free) – x4, x8
78-ball (8mm x 10.5mm) Rev. H
78-ball (9mm x 11.5mm) Rev. D
82-ball (12.5mm x 15mm) Rev. A
FBGA package (Pb-free) – x16
96-ball (9mm x 14mm) Rev. D
Timing – cycle time
1.07ns @ CL = 13 (DDR3-1866)
1.25ns @ CL = 11 (DDR3-1600)
1.5ns @ CL = 10 (DDR3-1333)
1.5ns @ CL = 9 (DDR3-1333)
1.87ns @ CL = 8 (DDR3-1066)
1.87ns @ CL = 7 (DDR3-1066)
Operating temperature
Commercial (0°C
T
C
+95°C)
Industrial (–40°C
T
C
+95°C)
Revision
Note:
Marking
512M4
256M8
128M16
DA
HX
JE
HA
-107
-125
-15
-15E
-187
-187E
None
IT
:A/:D/:H
1. Not all options listed can be combined to
define an offered product. Use the part
catalog search on
http://www.micron.com
for available offerings.
Table 1: Key Timing Parameters
Speed Grade
-107
1, 2
-125
1, 2
-15
3
-15E
1
-187
-187E
Notes:
Data Rate (MT/s)
1866
1600
1333
1333
1066
1066
Target
t
RCD-
t
RP-CL
13-13-13
11-11-11
10-10-10
9-9-9
8-8-8
7-7-7
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.91
13.75
15
13.5
15
13.1
13.91
13.75
15
13.5
15
13.1
13.91
13.75
15
13.5
15
13.1
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1066, CL = 8 (-187).
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2006 Micron Technology, Inc. All rights reserved.

 
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