HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Features
Broad Bandwidth Specified up to 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Fully Monolithic
Glass Encapsulate Construction
RoHS Compliant* and 260°C Reflow Compatible
J2
Rev. V1
Functional Diagram
J5
C
L
C
L
SW3
SW1
C
SW2
L
C
L
C
C
C
C
J3
J6
Description
The MASW-011053 device is a SP3T broad band
switch with integrated bias networks utilizing
MACOM’s patented HMIC (Heterolithic Microwave
Integrated Circuit) process. This process allows the
incorporation of silicon pedestals that form series
and shunt diodes or vias by imbedding them in low
loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and
glass gives HMIC devices low loss and high isolation
performance with exceptional repeatability through
low millimeter frequencies. Large bond pads
facilitate the use of low inductance ribbon bonds,
while gold backside metallization allows for manual
or automatic chip bonding via 80/20 - Au/Sn,
62/36/2 - Sn/Pb/Ag solders or electrically conductive
silver epoxy.
J4
J8
J1
J7
Pin Configuration
2
Pin
J1
J2
J3
J4
Function
Antenna
RF
IN
RF
IN
RF
IN
Bias of J2
Bias of J3
Bias of J4
Bias of Antenna
Ordering Information
1
Part Number
MASW-011053-47300G
MASW-011053-47300W
1. Die quantity varies.
J5
Package
Die in Gel Pack
Die in Waffle Pack
J6
J7
J8
2. The exposed metallization on the chip bottom must be
connected to RF, DC and thermal ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Rev. V1
Electrical Specifications:
T
A
= +25°C, Z
0
= 50 Ω, P
IN
= 0 dBm, DC Control Current = 20 mA (unless
otherwise noted)
Parameter
Test Conditions
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
—
Units
Min.
Typ.
1.0
0.6
0.8
1.1
62
55
50
47
14
15
16
14
46.0
48.8
50.8
45.0
66.3
66.8
66.0
68.3
50
Max.
2.0
1.1
1.3
1.9
Insertion Loss
dB
—
Input to Output Isolation
dB
54
47
40
36
—
Input Return Loss
dB
—
—
Input/Output IP3 @ 5 dBm
dBm
—
—
Input/Output IP2 @ 5 dBm
dBm
—
—
Switching Speed
3
ns
—
—
3. Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC output spiking
network, R = 50 – 200 Ω , C = 390 – 560 pF.
Absolute Maximum Ratings
4,5
Parameter
Forward Bias Current
Reverse Bias Voltage
(RF & DC)
RF Incident Power
Junction Temperature
Operating Temperature
Storage Temperature
Absolute Maximum
60 mA
50 V
33 dBm CW
+175°C
-65°C to +125°C
-65°C to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
HMIC Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these devices.
2
4. Exceeding any one or combination of these limits may cause
permanent damage to this device.
5. MACOM does not recommend sustained operation near these
survivability limits.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Truth Table
DC Control Current
6
J5
-20 mA
+20 mA
+20 mA
J6
+20 mA
-20 mA
+20 mA
J7
+20 mA
+20 mA
-20 mA
J1-J2
Low Loss
Isolation
Isolation
Condition of
RF Output
J1-J3
Isolation
Low Loss
Isolation
J1-J3
Isolation
Isolation
Low Loss
Rev. V1
6. The forward diode voltage drop between:
J8 to J5, J6 or J7 is 1.0 V typical.
J5, J6 or J7 to GND is 0.9 V typical.
Circuit Schematic
J5
C4
Pin Diode 6
C7
L1
Pin Diode 5
J2
C2
Pin Diode 3
L4
L2
J8
C1
J7
J1
Pin Diode 4
Pin Diode 1
Pin Diode 2
C5
C3
J4
C6
J3
L3
J6
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Typical Performance Curves
Isolation @ 5 V, +25°C
-30
5 mA
40 mA
Rev. V1
Isolation @ 5 V, 5 mA
-30
-40
-40
-50
-50
-60
-60
+25°C
+85°C
-70
-70
-80
2
4
6
8
10
12
14
16
18
-80
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
Insertion Loss @ 5 V, +25°C
0
5 mA
10 mA
20 mA
40 mA
Insertion Loss @ 5 V, 20 mA
0
-0.3
-0.3
+25°C
+85°C
-0.6
-0.6
-0.9
-0.9
-1.2
-1.2
-1.5
2
4
6
8
10
12
14
16
18
-1.5
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
Input Return Loss @ 5 V, +25°C
0
5 mA
10 mA
20 mA
40 mA
Output Return Loss @ 5 V, +25°C
0
5 mA
10 mA
20 mA
40 mA
-10
-10
-20
-20
-30
-30
-40
2
4
6
8
10
12
14
16
18
-40
2
4
6
8
10
12
14
16
18
4
Frequency (GHz)
Frequency (GHz)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MASW-011053
HMIC Silicon PIN Diode SP3T Switch with Integrated Bias Network
2 - 18 GHz
Typical Performance Curves
IP3
80
Rev. V1
IP2
80
70
5V@
2V@
5V@
2V@
+25°C
+25°C
+85°C
+85°C
70
60
60
50
50
5V@
2V@
5V@
2V@
+25°C
+25°C
+85°C
+85°C
40
0
5
10
15
20
40
0
5
10
15
20
Frequency (GHz)
Frequency (GHz)
Junction Temperature
140
120
100
80
60
40
20
5 mA
10 mA
20 mA
40 mA
Compression Power
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5 mA
10 mA
20 mA
40 mA
10
15
20
25
30
35
10
15
20
25
30
35
CW Incident Power (dBm)
CW Incident Power (dBm)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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