DATASHEET
HCTS164MS
Radiation Hardened 8-Bit Serial-In/Parallel-Out Shift Register
FN3386
Rev 1.00
August 1995
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• Dose Rate Survivability >10
12
RAD (Si)/s (20ns Pulse)
• Dose Rate Upset >10
10
RAD (Si)/s (20ns Pulse)
• Single Event Ray Upset Rate < 2 x
(Typ)
• LET Threshold >100 MEV-cm
2
/mg
• Latch-Up-Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
-VIL = 0.8 VCC (Max)
-VIH = VCC/2 (Min)
• Input Current Levels Ii
5A
at VOL, VOH
10
-9
Errors/Bit Day
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835, CDIP2-T14
TOP VIEW
DS1 1
DS2 2
Q0 3
Q1 4
Q2 5
Q3 6
GND 7
14 VCC
13 Q7
12 Q6
11 Q5
10 Q4
9 MR
8 CP
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835, CDFP3-F14
TOP VIEW
DS1
DS2
Q0
Q1
Q2
Q3
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
Q7
Q6
Q5
Q4
MR
CP
Description
The Intersil HCTS164MS is a radiation hardened 8-bit Serial-In/
Parallel-Out Shift Register with asynchronous reset.
The HCTS164MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
Ordering Information
PART NUMBER
HCTS164DMSR
HCTS164KMSR
HCTS164D/Sample
HCTS164K/Sample
HCTS164HMSR
TEMPERATURE RANGE
-55 C to +125 C
-55
o
C
to
+125
o
C
o
o
o
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
+25
o
C
+25 C
+25
o
C
Truth Table
OPERATING
MODE
Reset (Clear)
Shift
INPUTS
MR
L
H
H
H
H
CP
X
DS1
†
X
L
L
H
H
DS2
†
X
L
H
L
H
Q0
L
L
L
L
H
OUTPUTS
Q1-Q7
L-L
q0 -q6
q0 - q6
q0 - q6
q0 - q6
H = High Voltage Level
L = Low Voltage Level
= LOW-to-HIGH clock transition
q = Lower case letters indicate the state of the referenced input (or output) one setup time prior to the LOW-to-HIGH clock transition
†
= DS1 and DS2 inputs must be at state one setup prior to CP (rising edge)
FN3386 Rev 1.00
August 1995
Page 1 of 8
HCTS164MS
Functional Diagram
CP
DS1
DS2
CL
D Q
R
CL
D Q
R
CL
D Q
R
CL
D Q
R
CL
D Q
R
CL
D Q
R
CL
D Q
R
CL
D Q
R
MR
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
FN3386 Rev 1.00
August 1995
Page 2 of 8
HCTS164MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
10mA
DC Drain Current, Any One Output
25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
JA
JC
o
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74 C/W
24
o
C/W
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 116
30
o
C/W
o
Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . .0.43W
If device power exceeds package dissipation capability provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5 VCC (TR, TF) . . . . . . 100ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . VCC to VCC/2V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0V
(Note 2)
VCC = VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V (Note 2)
VCC = 4.5V, VIH = 2.25V,
IOL = 50A, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50A, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50A, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50A, VIL = 0.8V
Input Leakage
Current
Noise Immunity
Functional Test
NOTES:
1. All voltages reference to device GND.
2. For functional tests, VO
4.0V
is recognized as a logic “1”, and VO0.5V is recognized as a logic “0”.
IIN
VCC = 5.5V, VIN = VCC or
GND
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
GROUP
A SUB-
GROUPS
1
2, 3
1
2, 3
1
2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1
2, 3
7, 8A, 8B
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
-
VCC
-0.1
VCC
-0.1
-
-
-
MAX
40
750
-
-
-
-
0.1
0.1
-
-
0.5
5.0
-
UNITS
A
A
mA
mA
mA
mA
V
V
V
V
A
A
-
PARAMETERS
Supply Current
SYMBOL
ICC
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low
IOL
IOH
VOL
FN
FN3386 Rev 1.00
August 1995
Page 3 of 8
HCTS164MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V
VCC = 4.5V
CP to Qn
TPHL
VCC = 4.5V
VCC = 4.5V
MR to Qn
TPHL
VCC = 4.5V
VCC = 4.5V
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3.0V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
CONDITIONS
VCC = 5.0V, f = 1MHz
LIMITS
NOTES
1
1
CIN
VCC = 5.0V, f = 1MHz
1
1
Output Transition Time
TTHL
TTLH
VCC = 4.5V
1
1
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
MAX
135
210
10
10
15
22
UNITS
pF
pF
pF
pF
ns
ns
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
9
10, 11
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
MAX
26
33
33
40
34
42
UNITS
ns
ns
ns
ns
ns
ns
PARAMETER
CP to Qn
SYMBOL
TPLH
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Minimum and Maximum Limits are guaranteed, but not
directly tested. These parameters are characterized upon initial design release and upon design changes which affect these character-
istics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
TEMP
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
4.0
-4.0
-
VCC
-0.1
-
-
2
2
2
MAX
0.75
-
-
0.1
-
5
-
33
40
42
UNITS
mA
mA
mA
V
V
A
-
ns
ns
ns
PARAMETERS
Quiescent Current
Output Current (Sink)
Output Current (Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
Noise Immunity
Functional Test
CP to Qn
CP to Qn
MR to Qn
SYMBOL
ICC
IOL
IOH
VOL
VOH
IIN
FN
TPLH
TPHL
TPHL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND, VOUT =
0.4V
VCC = 4.5V, VIN = VCC or GND, VOUT =
VCC -0.4V
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50A
VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOH = -50A
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = VCC/2, VIL = 0.8V,
(Note 3)
VCC = 4.5V
VCC = 4.5V
VCC = 4.5V
FN3386 Rev 1.00
August 1995
Page 4 of 8
HCTS164MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
TEMP
MIN
MAX
UNITS
PARAMETERS
NOTES:
SYMBOL
(NOTES 1, 2)
CONDITIONS
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
3. For functional tests VO
4.0V
is recognized as a logic “1”, and VO
0.5V
is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
PARAMETER
ICC
IOL/IOH
GROUP B
SUBGROUP
5
5
DELTA LIMIT
12A
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test 1 (Postburn-In)
Interim Test 2 (Postburn-In)
PDA
Interim Test 3 (Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTE:
1. Alternate Group A Testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN Test which will be performed 100% Go/No-Go.
TEST
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 7, 9
Subgroups 1, 2, 3, 9, 10, 11
ICC, IOL/H
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
FN3386 Rev 1.00
August 1995
Page 5 of 8
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