datasheet
电子工程世界电子工程世界电子工程世界
Datasheet
型号

关键词

搜索
关键词

型号

搜索
Datasheet> 器件分类 > 分立半导体> 二极管> SZMMSZ4689ET1
PDF数据手册
文档预览

SZMMSZ4689ET1

产品描述DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode
产品类别分立半导体    二极管   
文件大小163KB，共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

SZMMSZ4689ET1概述

DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

SZMMSZ4689ET1规格参数

参数名称属性值
厂商名称ON Semiconductor(安森美)
Reach Compliance Codeunknown
ECCN代码EAR99
二极管类型ZENER DIODE

SZMMSZ4689ET1文档预览

MMSZ4xxxET1 Series,
SZMMSZ4xxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
http://onsemi.com
•
•
•
•
•
•
•
•
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range
−
1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power
−
225 W (8 x 20
ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
Pb−Free Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
1
Cathode
2
Anode
2
1
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
1
xxx M
G
G
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
≤
25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
L
= 75°C
Derated above 75°C
Thermal Resistance, (Note 3)
Junction−to−Ambient
Thermal Resistance, (Note 3)
Junction−to−Lead
Junction and Storage Temperature Range
Symbol
P
pk
P
D
Max
225
Unit
W
xxx = Device Code (Refer to page 2)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMSZ4xxxET1
Package
SOD−123
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
10000 / Tape &
Reel
10000 / Tape &
Reel
500
6.7
340
150
−55
to
+150
mW
mW/°C
°C/W
°C/W
°C
MMSZ4xxxET1G
SZMMSZ4xxxET1G
MMSZ4xxxET3
MMSZ4xxxET3G
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
SOD−123
(Pb−Free)
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 5
1
Publication Order Number:
MMSZ4678ET1/D
MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Zener Voltage
(Note 1)
Device
Marking
CF8
CG3
CG7
CG8
CG9
CH1
CH2
CH3
CH7
CH9
CJ2
CJ3
CJ4
CJ6
CK1
CK3
CK9
V
Z
(V)
Min
2.09
3.13
4.47
4.85
5.32
5.89
6.46
7.13
9.50
11.40
13.3
14.25
15.20
17.10
22.80
25.65
40.85
Nom
2.2
3.3
4.7
5.1
5.6
6.2
6.8
7.5
10
12
14
15
16
18
24
27
43
Max
2.31
3.47
4.94
5.36
5.88
6.51
7.14
7.88
10.50
12.60
14.7
15.75
16.80
18.90
25.20
28.35
45.15
@ I
ZT
mA
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
mA
4
7.5
10
10
10
10
10
10
1
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
Leakage Current
I
R
@ V
R
V
1
1.5
3
3
4
5
5.1
5.7
7.6
9.1
10.6
11.4
12.1
13.6
18.2
20.4
32.6
Device*
SZ/MMSZ4680ET1, G
MMSZ4684ET1
MMSZ4688ET1, G
SZ/MMSZ4689ET1, G
MMSZ4690ET1
MMSZ4691ET1
MMSZ4692ET1
MMSZ4693ET1
MMSZ4697ET1
MMSZ4699ET1
SZ/MMSZ4701ET1, G
MMSZ4702ET1, G
MMSZ4703ET1
MMSZ4705ET1
MMSZ4709ET1
MMSZ4711ET1
MMSZ4717ET1
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30°C
±1°C.
*The “G’’ suffix indicates Pb−Free package available.
http://onsemi.com
2
MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
−1
−2
−3
V
Z
@ I
ZT
TYPICAL T
C
VALUES
100
TYPICAL T
C
VALUES
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
V
Z
@ I
ZT
10
2
3
4
5
6
7
8
9
10
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
1.2
P
D
, POWER DISSIPATION (WATTS)
1.0
0.8
0.6
0.4
0.2
0
P
D
versus T
A
P
D
versus T
L
1000
Ppk , PEAK SURGE POWER (WATTS)
Figure 2. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
RECTANGULAR
WAVEFORM, T
A
= 25°C
100
10
0
25
50
75
100
T, TEMPERATURE (°C)
125
150
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
I
Z
= 1 mA
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
100
5 mA
20 mA
10
100
10
150°C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75°C 25°C
0°C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
http://onsemi.com
3
MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series
TYPICAL CHARACTERISTICS
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
100
BIAS AT
50% OF V
Z
NOM
10
T
A
= 25°C
1000
I R , LEAKAGE CURRENT (
m
A)
100
10
1
0.1
0.01
+ 25°C
−55°C
0
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
+150°C
0.001
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
0.00001
Figure 7. Typical Capacitance
100
I Z, ZENER CURRENT (mA)
100
I Z, ZENER CURRENT (mA)
T
A
= 25°C
Figure 8. Typical Leakage Current
T
A
= 25°C
10
10
1
1
0.1
0.1
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 9. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
20
40
t
P
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
60
80
t, TIME (ms)
Figure 11. 8
×
20
ms
Pulse Waveform
http://onsemi.com
4
MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
A1
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
b
c
D
E
H
E
L
q
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
---
---
0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
---
---
0.25
---
10
°
0
°
MIN
0.037
0.000
0.020
---
0.055
0.100
0.140
0.010
0
°
INCHES
NOM
0.046
0.002
0.024
---
0.063
0.106
0.145
---
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
10
°
H
E
2.36
0.093
4.19
0.165
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
5
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÂÂÂÂ
ÂÂÂÂ
2
E
q
b
C
L
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
SCALE 10:1
mm
inches
MMSZ4678ET1/D
查看更多（仅显示前5页内容，查看全部内容请下载文档。）>

SZMMSZ4689ET1相似产品对比

SZMMSZ4689ET1 SZMMSZ4680ET1 SZMMSZ4701ET1
描述 DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
二极管类型 ZENER DIODE ZENER DIODE ZENER DIODE

推荐资源

水质鉴别电路

交流接触器低电压启动电路之二

采用TL431构成的并联稳压电源电路图

由UC1864构成的开关电源实例电路图

简易长途电话锁电路图

单相电动机串接电容调速三速电路

51单片机的休眠模式！！
如题。关于51休眠模式的整理...
zca123 51单片机
求wince下打印机驱动程序
小弟想在wince下做一个打印机的驱动程序，想找一个范例来参考一下，哪位能提供一下相关信息啊？谢谢...
jinqc 嵌入式系统
信号链精彩课程强势登陆TI教室，速来抢“鲜”围观！
TI教室最近新上了一批信号链课程，个个精彩，小伙伴儿们速来抢“鲜”围观。:hug:诸课程围绕主题“电机”展开，讲解了电机驱动的基本原理及机器人、无人机、无线电动工具等应用设计。 >>立即 ......
EEWORLD社区 TI技术论坛
是德科技感恩月活动的想法
此内容由EEWORLD论坛网友fsyicheng原创，如需转载或用于商业用途需征得作者同意并注明出处 今天虽然周末，起的比较早，就上来论坛逛逛，近来比较忙，所以也很少写点东西了。 看 ......
fsyicheng 聊聊、笑笑、闹闹
【分享】迅为4412开发板移植Android后，安装QQ不能视频通信的问题，但照相机可用
问题：开发板android4.0，安装QQ不能视频通信 解决方式：qq默认使用前置摄像头，需要在内核里把200w的摄像头配置上，添加下面两个宏： CONFIG_VIDEO_SR200PC20=y CONFIG_VIDEO_SR200PC20_P ......
Chihiro ARM技术
TI图库有中文例程了
SW-LM3S-8264软件包已支持中文显示，在DK-LM3S9B96上实验例程，StellarisWare\third_party\fonts\lang_demo The lang_demo example application has been updated to include support for ac ......
lonlmjs 微控制器 MCU
器件捷径:   A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

热门器件

  1. SN54LS670WB
  2. 802-019-CC4ZM6-1NC-12
  3. FW-03-05-G-D-433-100
  4. MT58L512V18FS-10.5
  5. 54121-119-14-1150
  6. MM-4C2-100-261-26WQ
  7. TFEEF5VT135BC
  8. SA324220F3XIAR
  9. 15SMCJ130
  10. BZT52-B8V2S-AU_R1_000A1
  11. A2007WVD-S-F-13P-BK
  12. A2541WV-S-2x19P-C800-G30

开源项目推荐更多

  1. LT6656BIS6-3、3V ADC 电压基准和桥式激励电源的典型应用
  2. 用于便携式照明的 4-LED 白光 LED 驱动器
  3. 使用 Microchip Technology 的 TC2951 的参考设计
  4. NCS2200AGEVB：低功耗单比较器评估板
  5. NCS2002SN2T1G 高端电流检测典型应用电路
  6. 基于A6986F5V的38V、1.5A同步降压型开关稳压器评估板
  7. 使用 ON Semiconductor 的 SPT5400 的参考设计
  8. AM2S-1205SH30Z 5V 2瓦直流转直流转换器的典型应用
  9. AST1S31HF 的典型应用适用于汽车应用的高达 4 V、3 A 降压型 2.3 MHz 开关稳压器
  10. LT1307BIS8 单节 CCFL 电源典型应用电路

热门活动更多

  1. 【有奖直播】TI 工业自动化与机器人功能安全解决方案线上研讨会
  2. 是德科技重磅新品发布会｜新一代无线测试利器VXT：开启 RF 与模拟 IQ 全链路测试
  3. 你晒单我买单2026第1期报名中，DigiKey得捷带您畅享好物！
  4. 免费申请《一本书讲透汽车功能安全：标准详解与应用实践》，挑战《ISO26262标准》共读，赢好礼
  5. 装备焕新月：e络盟Multicomp Pro系列产品，小投入，大升级 ―― 装备焕新惊喜体验
  6. MPS 机器人模块设计大赛报名重磅开启，锻造硬实力，让想法照进现实！
  7. 有奖直播：ADI BMS 硬件和软件设计指南
  8. 罗德与施瓦茨―从天到地 从测试者角度 解读NTN技术
  9. 有奖直播：AI基础设施技术测试周
  10. 2025年度“最能打的中国芯”奖项正式公布

热门文章更多

  1. ZDS2022示波器百集实操特辑之29：如何测量两路信号之间的时
  2. 晶洲装备新工厂首批G8.5量产设备交付
  3. 27-基于51单片机的空调温度控制系统
  4. 手机app远程操控示波器演示
  5. 米尔亮相ST峰会，不止于STM32MP135核心模组开发应用
  6. 米尔亮相ST峰会，不止于STM32MP135核心模组开发应用

技术资料推荐更多

  1. PCB设计经验：Altium+designer+元件库大全（终结版）
  2. UT-S5PV210开发板文档资料
  3. HslCommunicationDemo上位机调试软件
  4. IAR for arm 6.4版本破解
  5. 基本电路分析法
  6. 无锡华晶上华0.6um Hspice CMOS工艺库(内部资料)
  7. 开关电源变压器详细设计实例(内有详细公式).pdf
  8. 24Pin Type-C连接器 设计报告-温升分析报告
  9. 微电子封装技术
  10. ALTERA公司FPGA的低端MAX系列到高端STRATIX全部原理图库

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关： 大学堂 TI培训 Datasheet 电子工程 索引文件: 867  1625  2310  537  673  18  33  47  11  14 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编：100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved