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MT46H128M32LFCM-5:A

产品描述DDR DRAM, 128MX32, 5ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
产品类别存储    存储   
文件大小3MB,共106页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 全文预览

MT46H128M32LFCM-5:A概述

DDR DRAM, 128MX32, 5ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90

MT46H128M32LFCM-5:A规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明VFBGA,
针数90
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间5 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PBGA-B90
JESD-609代码e1
长度13 mm
内存密度4294967296 bit
内存集成电路类型DDR DRAM
内存宽度32
功能数量1
端口数量1
端子数量90
字数134217728 words
字数代码128000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128MX32
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1 mm
自我刷新YES
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度10 mm

文档预览

下载PDF文档
2Gb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H128M16LF – 32 Meg x 16 x 4 Banks
MT46H64M32LF – 16 Meg x 32 x 4 Banks
MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2
MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4
MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4
Features
V
DD
/V
DDQ
= 1.70–1.95V
Bidirectional data strobe per byte of data (DQS)
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
4 internal banks for concurrent operation
Data masks (DM) for masking write data; one mask
per byte
Programmable burst lengths (BL): 2, 4, 8, or 16
Concurrent auto precharge option is supported
Auto refresh and self refresh modes
1.8V LVCMOS-compatible inputs
Temperature-compensated self refresh (TCSR)
Partial-array self refresh (PASR)
Deep power-down (DPD)
Status read register (SRR)
Selectable output drive strength (DS)
Clock stop capability
64ms refresh; 32ms for the automotive temperature
range
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate
200 MHz
185 MHz
166 MHz
133 MHz
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
V
DD
/V
DDQ
1.8V/1.8V
Configuration
128 Meg x 16 (32 Meg x 16 x 4 banks)
64 Meg x 32 (16 Meg x 32 x 4 banks)
Addressing
JEDEC-standard
Reduced page-size
1
4-die stack reduced page-size
2
2-die stack standard
4-die stack standard
Plastic "green" package
60-ball VFBGA (10mm x 11.5mm)
3
90-ball VFBGA (10mm x 13mm)
4
PoP (plastic "green" package)
168-ball VFBGA (12mm x 12mm)
4
168-ball WFBGA (12mm x 12mm)
4
168-ball WFBGA (12mm x 12mm)
4
240-ball WFBGA (14mm x 14mm)
4
Timing – cycle time
5ns @ CL = 3 (200 MHz)
5.4ns @ CL = 3 (185 MHz)
6ns @ CL = 3 (166 MHz)
7.5ns @ CL = 3 (133 MHz)
Power
Standard I
DD2
/I
DD6
Operating temperature range
Commercial (0˚ to +70˚C)
Industrial (–40˚C to +85˚C)
Automotive (–40˚C to +105˚C)
1
Design revision
Notes:
1.
2.
3.
4.
Marking
H
128M16
64M32
LF
LG
R4
L2
L4
CK
CM
JV
KQ
MA
MC
-5
-54
-6
-75
None
None
IT
AT
:A
Contact factory for availability.
Available in the 168-ball JV package only.
Available only for x16 configuration.
Available only for x32 configuration.
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.

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