process. The SGA-9189 is cost-effective for applications
requiring high linearity even at moderate biasing levels.
It is well suited for operation at both 5V and 3V.
SGA-9189
Silicon Germanium HBT Amplifier
Product Features
Typical Gmax, OIP3, P1dB @ 5V,180mA
25
23
21
19
17
15
13
11
9
7
5
Gmax
OIP3, P1dB (dBm)
OIP3
P1dB
44
42
40
38
36
34
32
30
28
26
24
Gmax (dB)
•
•
•
•
•
•
•
DC-3 GHz Operation
39 dBm Ouput IP3 Typical at 1.96 GHz
12 dB Gain Typical at 1.96 GHz
26 dBm P1dB Typical at 1.96 GHz
2.5 dB NF Typical at 0.9 GHz
Cost Effective
3-5 V Operation
Applications
•
•
•
•
Wireless Infrastructure Driver Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 contains detailed application circuits
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Symbol
Device Characteristics, T = 25ºC
V
CE
= 5V, I
CQ
=180mA (unless otherw ise noted)
Maximum Available Gain
Z
S
=Z
S
*, Z
L
=Z
L
*
Power Gain
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output 1dB Compression Point
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Output Third Order Intercept Point
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
, P
OUT
= +13 dBm per tone
Noise Figure
Z
S
=Z
SOPT
, Z
L
=Z
LOPT
Collector - Emitter Breakdown Voltage
DC current gain
Thermal Resistance (junction-to-lead)
Device Operating Voltage (collector-to-emitter)
Device Operating Current (collector-to-emitter)
Test Frequency
[1] 100% Tested
[2] Sample Tested
f = 900 MHz
f = 1960 MHz
f = 900 MHz [1]
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz [2]
f = 900 MHz
f = 1960 MHz
Units
Min.
Typ.
20.5
13.2
17.8
11.1
26.3
25.6
38.8
38.9
2.5
3.9
Max.
G
MAX
G
P 1dB
OIP
3
NF
B V
C EO
h
FE
Rth
V
CE
I
CE
dB
dB
dB m
dB m
dB
V
7.5
120
ºC/W
V
mA
8.5
180
47
5.5
190
300
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev B
1
Preliminary
SGA-9189 SiGe HBT Amplifier
Absolute Maximum Ratings
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the device operating conditions
should also satisfy the following expression:
P
DC
- P
OUT
< (T
J
- T
L
) / R
TH
where:
P
DC
= I
CE
* V
CE
(W)
P
OUT
= RF Output Power (W)
T
J
= Junction Temperature (C)
T
L
= Lead Temperature (pin 4) (C)
R
TH
= Thermal Resistance (C/W)
Parameter
Base C urrent
C ollector C urrent
C ollector - Emi tter Voltage
C ollector - Base Voltage
Emi tter - Base Voltage
Operati ng T mperature
e
Storage T mperature Range
e
Operati ng Juncti on T mperature
e
Power D i ssi pati on
Symbol
I
B
I
CE
V
C EO
V
C BO
V
EBO
T
OP
T
stor
T
J
P
DISS
Value
5
200
7.0
20
4.8
-40 to +85
-40 to +150
+150
1.4
U nit
mA
mA
V
V
V
C
C
C
W
Operati on of thi s devi ce beyond any one of these li mi ts may cause
permanent damage. For reli able conti nuous operati on, the devi ce
voltage and current must not exceed the maxi mum operati ng values
speci fi ed i n the table on page 1.
Typical Performance - Engineering Application Circuits (See AN-021)
Freq
(MHz )
945
1960
2140
2440
1
V
CE
(V)
5
5
5
5
I
CQ
(mA)
184
179
180
180
P1dB OIP3
1
(dBm) (dBm)
26.2
26.0
25.5
25.5
38.1
39.1
38.4
38.7
Gain
(dB)
18.3
11.7
11.8
10.4
S11
(dB)
-18
-15
-20
-20
S 22
(dB)
-16
-18
-20
-20
NF
(dB)
2.5
3.9
2.6
3.1
Z
SOPT
(Ω )
Ω
6.8 - j0.85
7.6 - j11.2
18.1 + j3.4
5.6 - j15.1
Z
LOPT
(Ω )
Ω
16 + j5.9
22.8 + j0.7
23.8 - j9.0
23.1 - j2.7
P
OUT
= +10 dBm per tone for V
CE
=5V, 1 MHz tone spacing
Freq
(MHz )
945
1960
2440
2
V
CE
(V)
3
3
3
I
CQ
(mA)
165
162
165
P1dB OIP3
1
(dBm) (dBm)
22.1
22.4
23.2
34.3
35.0
35.3
Gain
(dB)
17.7
11.8
9.9
S11
(dB)
-18
-18
-20
S 22
(dB)
-11
-16
-15
NF
(dB)
2.1
2.2
2.6
Z
SOPT
(Ω )
Ω
9.6 - j1.6
7.8 - j13.1
8.1 - j16.0
Z
LOPT
(Ω )
Ω
11.0 + j1.4
19.3 - j2.9
21.0 - j6.5
P
OUT
= +6 dBm per tone for V
CE
=3V, 1 MHz tone spacing
Data above represents typical performance of the application circuits noted in Application Note AN-021.
Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The
application note also includes biasing instructions and other key issues to be considered. For the latest
application notes please visit our site at www.sirenza.com or call your local sales representative.
C
B
Z
LOPT
Z
SOPT
E
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev B
2
Preliminary
SGA-9189 SiGe HBT Amplifier
De-embedded S-Parameters (Z
S
=Z
L
=50 Ohms, V
CE
=5V, I
CQ
=185mA, 25
°
C)
45
35
Insertion Gain & Isolation
5
-5
25
15
5
-5
0
1
2
3
4
5
6
Isolation
-15
-25
Gmax
Gain
-35
-45
7
8
30
25
20
15
10
5
0
-5
-10
0
Insertion Gain vs Temperature
Gain vs. Temp (dB)
Isolation (dB)
Gain (dB)
T = -40, 25, 85°C
1
2
3
4
5
6
7
8
Frequency (GHz)
S11 vs Frequency
1.0
0.5
Frequency (GHz)
S22 vs Frequency
1.0
2.0
0.5
2.0
4 GHz
5 GHz
3 GHz
4 GHz
3 GHz
5.0
0.2
5 GHz
0.2
2 GHz
8 GHz
0.5
1.0
2.0
5.0
5.0
2 GHz
1 GHz
inf
0.0
0.2
0.5
1.0
2.0
1 GHz
0.0
0.2
8 GHz
5.0
inf
S11
0.2
5.0
0.2
5.0
50 MHz
S22
50 MHz
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z
S
=Z
L
=50Ω. The data represents typical performace of the device.
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
400
350
300
DC-IV Curves
I
b
= 0.4 - 3.6 mA , 0.4 mA steps
T=25C
I
C
(mA)
250
200
150
100
50
0
0
2
4
6
8
V
CE
(V)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101497 Rev B
3
Preliminary
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
SGA-9189 SiGe HBT Amplifier
Part Number Ordering Information
Part Number
SGA-9189
Reel Siz e
7"
Devices/Reel
1000
Pin Description
Pin #
1
2
3
4
Function
B a se
Emitter
Collector
Emitter
RF Input
Description
Connection to ground. Use via holes to reduce lead
inductance. Place vias as close to ground leads as possible.
RF Output
Same as Pin 2
Part Symbolization
The part will be symbolized with the “P1”
designator and a dot signifying pin 1 on the top
surface of the package.
Mounting and Thermal Considerations
It is very important that adequate heat sinking be
provided to minimize the device junction
temperature. The following items should be
implemented to maximize MTTF and RF
performance.
1. Multiple solder-filled vias are required directly
below the ground tab (pin 4). [CRITICAL]
2. Incorporate a large ground pad area with
multiple plated-through vias around pin 4 of the
device. [CRITICAL]
3. Use two point board seating to lower the thermal
语音作为自然的人机接口，可以使车载导航系统实现更安全、更人性化的操作。通过国内外车载导航系统的功能对比可知，支持语音交互是车载导航系统的一个发展趋势。另外，市场信息服务公司J.D Power and Associates的调研数据也表明，56％的消费者更倾向于选择声控的导航系统。因此，开发车载语音导航系统是很有意义的。目前，国内已经具备开发车载语音导航系统的技术基础，特别是文语转换TTS技术...[详细]
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