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SYFR8128FKI-12

产品描述Non-Volatile SRAM Module, 128KX8, 120ns, CMOS, 46 X 15.92 MM, 7 MM HEIGHT, DIP-32
产品类别存储    存储   
文件大小480KB,共11页
制造商APTA Group Inc
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SYFR8128FKI-12概述

Non-Volatile SRAM Module, 128KX8, 120ns, CMOS, 46 X 15.92 MM, 7 MM HEIGHT, DIP-32

SYFR8128FKI-12规格参数

参数名称属性值
厂商名称APTA Group Inc
零件包装代码MODULE
包装说明DIP, DIP32,.6
针数32
Reach Compliance Codeunknown
ECCN代码EAR99
最长访问时间120 ns
JESD-30 代码R-XDMA-T32
内存密度1048576 bit
内存集成电路类型NON-VOLATILE SRAM MODULE
内存宽度8
功能数量1
端子数量32
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX8
封装主体材料UNSPECIFIED
封装代码DIP
封装等效代码DIP32,.6
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
并行/串行PARALLEL
电源5 V
认证状态Not Qualified
最大待机电流0.004 A
最大压摆率0.04 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级INDUSTRIAL
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL

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128K x 8 FRAM
SYFR8128FK-85/10/12
Issue 1.1 November 2001
Description
The SYFR8128FK is a 4.5~5.5V 1Mbit nonvolatile
memory module employing advanced ferroelectric
devices. A ferroelectric random access memory or
FRAM is nonvolatile but operates similar to SRAM.
Unlike SRAM, FRAM requires no additional battery
backup circuitry thus reducing costs and increasing
reliability. FRAM is best suited to enviroments
where frequent rapid writes are required.
The module offers cyle times of 150/160/
180ns for both read and writes. 10 year data
retention is standard and the device can be
screened to Commercial and Industrial
temperature grades.
Block Diagram
A0~A14
D0~D7
/WE
/OE
32K x 8
FRAM
32K x 8
FRAM
32K x 8
FRAM
32K x 8
FRAM
A15
A16
/CS1
CS2
Decoder
Pin Definition
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
1
2
3
4
5
6
7
8 TOP VIEW
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CS2
/WE
A13
A8
A9
A11
/OE
A10
/CS1
D7
D6
D5
D4
D3
Features
ï 1 Mbit 4.5~5.5V FRAM.
ï Non volatile with fast write time.
ï Access time of 85/100/120ns.
ï Cycle time of 150/160/180ns.
ï Equal Read/Write cycle time.
ï Operates similar to SRAM without the need for a
battery backup circuit.
ï Low power consumption.
ï Address latching on active chip enables.
ï Almost unlimited Read/Write endurance.
ï 10 years data retention.
ï Commercial & Industrial temperature grades.
ï Hardware data protection circuitry.
ï Data polling for end of write condition is
unnecessary.
ï Pin Definition compatible with 128K x 8 FRAM.
Package Details
32 Pin Dual in Line Package (DIP) :
Max. Dimensions (mm) - 46.00 x 15.92 x 7.00
Pin Functions
Address Inputs
A0~A16
Data Input/Output
DO~D7
Chip Selects
/CS1,CS2
Output Enable
/OE
Write Enable
/WE
Power (+5.0V)
VCC
Ground
GND
Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, England.
TEL +44 (0191) 2930500. FAX +44 (0191) 2590997 E-mail:
Sales@aptagroup.co.uk

SYFR8128FKI-12相似产品对比

SYFR8128FKI-12 SYFR8128FK-12 SYFR8128FKI-85 SYFR8128FK-10 SYFR8128FKI-10 SYFR8128FK-85
描述 Non-Volatile SRAM Module, 128KX8, 120ns, CMOS, 46 X 15.92 MM, 7 MM HEIGHT, DIP-32 Non-Volatile SRAM Module, 128KX8, 120ns, CMOS, 46 X 15.92 MM, 7 MM HEIGHT, DIP-32 Non-Volatile SRAM Module, 128KX8, 85ns, CMOS, 46 X 15.92 MM, 7 MM HEIGHT, DIP-32 Non-Volatile SRAM Module, 128KX8, 100ns, CMOS, 46 X 15.92 MM, 7 MM HEIGHT, DIP-32 Non-Volatile SRAM Module, 128KX8, 100ns, CMOS, 46 X 15.92 MM, 7 MM HEIGHT, DIP-32 Non-Volatile SRAM Module, 128KX8, 85ns, CMOS, 46 X 15.92 MM, 7 MM HEIGHT, DIP-32
零件包装代码 MODULE MODULE MODULE MODULE MODULE MODULE
包装说明 DIP, DIP32,.6 DIP, DIP32,.6 DIP, DIP32,.6 DIP, DIP32,.6 DIP, DIP32,.6 DIP, DIP32,.6
针数 32 32 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 120 ns 120 ns 85 ns 100 ns 100 ns 85 ns
JESD-30 代码 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32 R-XDMA-T32
内存密度 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE
内存宽度 8 8 8 8 8 8
功能数量 1 1 1 1 1 1
端子数量 32 32 32 32 32 32
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 85 °C 70 °C
组织 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 DIP DIP DIP DIP DIP DIP
封装等效代码 DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6 DIP32,.6
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.004 A 0.004 A 0.004 A 0.004 A 0.004 A 0.004 A
最大压摆率 0.04 mA 0.04 mA 0.04 mA 0.04 mA 0.04 mA 0.04 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 NO NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子节距 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
厂商名称 APTA Group Inc - APTA Group Inc APTA Group Inc APTA Group Inc APTA Group Inc

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