A Business Partner of Renesas Electronics Corporation.
Preliminary
NV4V31MF
Blue-Violet Laser Diode
405
nm
Blue-Violet Laser Light Source
Data Sheet
R08DS0045EJ0200
Rev.2.00
Jun 20, 2013
DESCRIPTION
The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity
from low to high output at high temperatures, and reduces the unevenness of beam divergence.
FEATURES
•
•
•
•
•
High optical output power
Peak emission wavelength
Single transverse mode (lateral)
Wide operating temperature range
φ
3.8 mm small CAN package
P
o
= 175 mW @CW
λ
p
= 405 nm TYP.
T
C
=
−5
to +85°C
<R>
APPLICATIONS
•
Blue-violet laser light source
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0045EJ0200 Rev.2.00
Jun 20, 2013
Page 1 of 7
A Business Partner of Renesas Electronics Corporation.
NV4V31MF
<R>
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
WITH GLASS
0.8±0.05
90°±2°
0.25±0.07
X
φ
1.2
Y
EFFECTIVE
DIAMETER
φ
0.65 MIN.
0.25±0.07
φ
3.8±0.1
φ
3.1 MAX.
0.1±0.05
*1
1.3±0.08
2.02±0.08
φ
2.42±0.1
Z
LD CHIP
0.2 MIN.
STEM
REFERENCE
PLAIN
3–
φ
0.3±0.05
6.5±0.5 1.0±0.1
P.C.D.
φ
1.43±0.15
1
3
0.3 MAX.
1
LD
2
0.2±0.1
3 (Stem GND)
2
BOTTOM VIEW
PIN CONNECTIONS
Remarks 1.
Cap glass thickness:
0.25±0.03 mm
Cap glass refractive index:1.53
(λ = 405 nm)
2.
Position accuracy of the LD chip based on the center of stem
Δ
x
=
±80
μ
m
Δ
y
=
±80
μ
m
Δ
z
=
±80
μ
m (*1)
R08DS0045EJ0200 Rev.2.00
Jun 20, 2013
Page 2 of 7
A Business Partner of Renesas Electronics Corporation.
NV4V31MF
<R>
Chapter Title
ORDERING INFORMATION
Part Number
NV4V31MF
Order Number
NV4V31MF-A
Rank
GV
KV
Packing Style
Tray Packing (250 p/Tray), Without data
Individual Packing (for samples), Without data
<R>
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C, unless otherwise specified)
Parameter
Optical Output Power (CW)
Reverse Voltage of LD
Operating Case Temperature
Storage Temperature
Symbol
P
o
V
R
T
C
T
stg
Ratings
180
2
−5
to +85
−40
to +85
Unit
mW
V
°C
°C
RECOMMENDED OPERATING CONDITIONS
(T
C
= 25°C, unless otherwise specified)
Parameter
Optical Output Power (CW)
Symbol
P
o
MAX.
175
Unit
mW
ELECTRO-OPTICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
Parameter
Threshold Current
Operating Current
Optical Voltage
Slope Efficiency
Peak Wavelength
Beam Divergence (lateral)
Beam Divergence (vertical)
Position Accuracy Angle
(lateral)
Position Accuracy Angle
(vertical)
Symbol
I
th
I
op
V
op
Conditions
CW
CW, P
o
= 175 mW
CW, P
o
= 175 mW
CW, P
o
= 20 mW, 175 mW
CW, P
o
= 175 mW
CW, P
o
= 175 mW
CW, P
o
= 175 mW
MIN.
TYP.
35
150
5.0
1.55
405
9
20
0
0
MAX.
55
200
6.5
415
12
25
3
3
Unit
mA
mA
V
W/A
nm
deg.
deg.
η
d
λ
p
θ
//
θ
⊥
Δθ
//
Δθ
⊥
1.1
400
6
15
−3
−3
R08DS0045EJ0200 Rev.2.00
Jun 20, 2013
Page 3 of 7
A Business Partner of Renesas Electronics Corporation.
NV4V31MF
<R>
Chapter Title
TYPICAL CHARACTERISTICS (T
C
= 25°C, unless otherwise specified)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
200
10
FORWARD VOLTAGE vs.
FORWARD CURRENT
20°C
25°C
30°C
40°C
50°C
60°C
70°C
80°C
90°C
Optical Output Power P
O
(mW)
180
140
120
100
80
60
40
20
0
0
50
100
150
20°C
25°C
30°C
40°C
50°C
60°C
70°C
80°C
90°C
200
Forward Voltage V
F
(V)
160
8
6
4
2
0
0
50
100
150
200
Forward Current I
F
(mA)
Forward Current I
F
(mA)
POWER DEPENDENCE OF
PEAK WAVELENGTH
410
N=5
412
410
408
406
404
402
TEMPERATURE DEPENDENCE OF
PEAK WAVELENGTH
175 mW
N=5
Peak Wavelength
λ
p
(nm)
408
406
404
402
0.011 nm/mW
0
50
100
150
200
Peak Wavelength
λ
p
(nm)
400
400
0
0.064 nm/°C
20
40
60
80
100
Optical Output Power P
O
(mW)
Temperature (°C)
FFP (LATERAL)
FFP (VERTICAL)
Relative Intensity
Relative Intensity
175 mW
120 mW
80 mW
40 mW
175 mW
120 mW
80 mW
40 mW
−30
−20
−10
0
10
20
30
−30
−20
−10
0
10
20
30
Angle (degrees)
Angle (degrees)
Remark
The graphs indicate nominal characteristics.
R08DS0045EJ0200 Rev.2.00
Jun 20, 2013
Page 4 of 7
A Business Partner of Renesas Electronics Corporation.
NV4V31MF
Wavelength Spectrum (100 mW)
1.2
1
1.2
1
Chapter Title
Wavelength Spectrum (175 mW)
Relative Intensity
0.8
0.6
0.4
0.2
0
400
Relative Intensity
402
404
406
408
410
0.8
0.6
0.4
0.2
0
400
402
404
406
408
410
Wavelength
λ
(nm)
Wavelength
λ
(nm)
Remark
The graphs indicate nominal characteristics.
R08DS0045EJ0200 Rev.2.00
Jun 20, 2013
Page 5 of 7
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