MASW-002102-13580
MASW-003102-13590
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Features
Broad Bandwidth Specified up to 18 GHz
Usable up to 26 GHz
Integrated Bias Network
Low Insertion Loss / High Isolation
Rugged
Fully Monolithic
Glass Encapsulate Construction
RoHS Compliant* and 260°C Reflow Compatible
Rev. V5
MASW-002102-13580
Description
The MASW-002102-13580 and MASW-003102-13590
devices are SP2T and SP3T broad band switches with
integrated bias networks utilizing M/A-COM Technology
Solutions HMIC
TM
(Heterolithic Microwave Integrated
Circuit) process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form
series and shunt diodes or vias by imbedding them in
low loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and glass
gives HMIC devices low loss and high isolation per-
formance with exceptional repeatability through low
millimeter frequencies. Large bond pads facilitate the
use of low inductance ribbon bonds, while gold back-
side metallization allows for manual or automatic chip
bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders
or electrically conductive silver epoxy.
MASW-003102-13590
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF Incident Power
Bias Current +25°C
Absolute Maximum
-65
o
C to +125
o
C
-65
o
C to +150
o
C
+175
o
C
50V
+33dBm C.W.
±20mA
Max. operating conditions for a combination
of RF power, D.C. bias and temperature:
+33dBm CW @ 15mA (per diode) @+85°C
Yellow areas denote wire bond pads
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-002102-13580
MASW-003102-13590
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
MASW-002102-13580
(
SPDT
)
Electrical Specifications @ T
AMB
= +25
o
C, 20mA Bias current
Rev. V5
Parameter
Frequency
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
Minimum
Nominal
1.5
0.70
0.90
1.2
Maximum
1.8
1.0
1.2
1.8
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
Insertion Loss
55
47
40
36
60
50
45
40
14
15
15
13.0
50
Isolation
6 GHz
12 GHz
18 GHz
2 GHz
Input Return
Loss
Switching Speed
1
6 GHz
12 GHz
18 GHz
-
MASW-003102-13590
(SP3T)
Electrical Specifications @ T
AMB
= +25
o
C, 20mA Bias current
Parameter
Frequency
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
2 GHz
6 GHz
12 GHz
18 GHz
-
Minimum
Nominal
1.6
0.8
1.0
1.3
59
50
45
40
14
15
16
14
50
Maximum
2.0
1.1
1.3
1.9
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
ns
Insertion Loss
Isolation
54
47
40
36
Input Return Loss
Switching Speed
1
Note:
1. Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC
output spiking network, R = 50 – 200Ω , C = 390 – 560pF.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-002102-13580
MASW-003102-13590
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Typical RF Performance at T
A
= +25°C, 20mA Bias Current
ISOLATION vs FREQUENCY
MASW-002102-13580
0
-10
-20
-30
-40
-50
-60
-70
0
2
4
6
8 10 12 14 16 18 20 22 24 26
Rev. V5
ISOLATION vs FREQUENCY
MASW-003102-13590
ISOLATION, dB
0
-10
-20
-30
-40
-50
-60
-70
0
2
4
6
8 10 12 14 16 18 20 22 24 26
ISOLATION, dB
FREQUENCY, GHz
FREQUENCY, GHz
INSERTION LOSS vs FREQUENCY
MASW-002102-13580
INSERTION LOSS, dB
INSERTION LOSS, dB
2
0
-2
-4
-6
-8
0
2
4
6
8 10 12 14 16 18 20 22 24 26
2
0
-2
-4
-6
-8
0
INSERTION LOSS vs FREQUENCY
MASW-003102-13590
2
4
6
8 10 12 14 16 18 20 22 24 26
FREQUENCY, GHz
FREQUENCY, GHz
RETURN LOSS vs FREQUENCY
MASW-003102-13590
0
-5
-10
-15
-20
-25
-30
-35
-40
0
2
4
6
8 10 12 14 16 18 20 22 24 26
RETURN LOSS, dB
FREQUENCY, GHz
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-002102-13580
MASW-003102-13590
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
MASW-002102-13580 Junction Temperature vs. Incident Power at 8 GHz
140
5 mA
Rev. V5
120
Series Diode_5mA
Series Diode_10mA
100
Series Diode_20mA
Series Diode_40mA
10 mA
Tjunction ( Deg. C )
80
20 mA
60
40 mA
40
20
10.00
15.00
20.00
25.00
30.00
35.00
C.W. Incident Power ( dBm )
MASW-002102-13580 Compression Power vs. Incident Power at 8 GHz
0.80
0.70
Series Diode_5mA
Series Diode_10mA
Series Diode_20mA
5 mA
0.60
Series Diode_40mA
Com
pression Pow ( dB )
er
0.50
10 mA
0.40
20 mA
0.30
40 mA
0.20
0.10
0.00
10.00
15.00
20.00
25.00
30.00
35.00
C.W. Incident Power ( dBm )
4
Note:
The PIN diodes in the MASW-002102-13580 and the MASW-003102-13590 have the same electrical
characteristics and will have similar performance.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-002102-13580
MASW-003102-13590
HMIC™ Silicon PIN Diode Switches
with Integrated Bias Network
Rev. V5
Operation of the MASW-002102-13580 and MASW-003102-13590
Operation of the
MASW-002102-13580
and
MASW-003102-13590
PIN diode switches is achieved by
simultaneous application of DC currents to the bias pads. The required levels for the different states are
shown in the tables below. The on-chip pull-up resistor @ J1, shown in the schematic below, has a value
of 40Ω - 60Ω and must be taken into consideration when defining drive circuitry.
Driver Connections MASW-002102-13580
Condition
of
RF Output
J1 - J2
Low Loss
Isolation
Condition
of
RF Output
J1 - J3
Isolation
Low Loss
Driver Connections MASW-003102-13590
Control Level
I
DC
@
J5
J6
J7
Condition Condition Condition
of
of
of
RF Output RF Output RF Output
J1 - J2
Low Loss
Isolation
Isolation
J1 - J3
Isolation
Low Loss
Isolation
J1 - J4
Isolation
Isolation
Low Loss
Control Level
I
DC
@
J4
-20mA
+20mA
J5
+20mA
-20mA
-20mA +20mA +20mA
+20 mA -20mA
+20mA +20mA
+20mA
-20mA
Equivalent Circuit MASW-002102-13580
Equivalent Circuit MASW-003102-13590
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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