TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices
2N2432
2N2432A
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
ECO
I
C
@ T
A
= +25 C
@ T
C
= +25
0
C
(2)
0
(1)
2N2432
30
30
15
2N2432A
45
45
18
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW
0
C
0
C
Unit
mW/
0
C
P
T
T
stg
T
J
Symbol
R
θ
JC
Operating & Storage Junction Temp. Range
100
300
600
-65 to +200
-65 to +175
Max.
0.25
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/
0
C above T
A
> +25
0
C
2) Derate linearly 4.0 mW/
0
C above T
C
> +25
0
C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
I
E
= 100
µAdc,
I
B
= 0
I
E
= 10 mAdc, I
B
= 0
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Emitter Cutoff Current
V
CB
= 25 Vdc
V
CB
= 40 Vdc
2N2432
2N2432A
Both
2N2432
2N2432A
2N2432
2N2432A
V
(BR)
ECO
15
18
10
30
45
10
10
Vdc
V
(BR)
CEO
Vdc
I
CES
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2432, 2N2432A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
V
CB
= 30 Vdc
V
CB
= 25 Vdc
V
CB
= 40 Vdc
V
CB
= 45 Vdc
Emitter-Collector Cutoff Current
V
EC
= 15 Vdc
,
V
BC
= 0 Vdc
Emitter-Base Cutoff Current
V
EB
= 15 Vdc
2N2432
2N2432
2N2432A
2N2432A
100
10
100
10
2.0
2.0
µAdc
ηAdc
µAdc
ηAdc
ηAdc
ηAdc
I
CBO
I
ECS
I
EBO
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
I
C
= 10
µAdc,
V
CE
= 5.0 Vdc
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
Forward-Current Transfer Ratio (Inverted Connection)
I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc
2N2432
2N2432A
Collector-Emitter Saturation Voltage
I
C
= 10 Vdc, I
B
= 0.5 mAdc
Emitter-Collector Offset Voltage
I
E
= 0 mAdc, I
B
= 200
µAdc
2N2432
2N2432A
I
E
= 0 mAdc, I
B
= 1.0 mAdc
2N2432
2N2432A
h
FE
30
80
2.0
3.0
0.15
0.5
0.4
0.1
0.7
mVdc
400
h
FE(inv)
V
CE(sat)
V
EC(ofs)
mVdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 20 MHz
Output Capacitance
V
CB
= 0 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
h
fe
C
obo
C
ibo
2.0
10
12
12
pF
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
stm32/stm8
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