PD - 96181
SMPS MOSFET
Applications
l
IRF6218SPbF
IRF6218LPbF
HEXFET
®
Power MOSFET
Reset Switch for Active Clamp
Reset DC-DC converters
-150V 150m
:
@V
GS
= -10V
D
V
DSS
R
DS(on)
max
I
D
-27A
Benefits
l
l
l
l
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Lead-Free
G
S
D
2
Pak
IRF6218SPbF
TO-262
IRF6218LPbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
DM
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
-150
± 20
-27
-19
-110
250
1.6
8.2
-55 to + 175
300 (1.6mm from case )
Units
V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
P
D
@T
C
= 25°C Maximum Power Dissipation
Linear Derating Factor
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
c
W
W/°C
V/ns
°C
h
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
g
Parameter
Typ.
Max.
0.61
40
Units
°C/W
Junction-to-Ambient
(PCB Mounted, steady state)
gh
–––
–––
Notes
through
are on page 9
www.irf.com
1
09/22/08
IRF6218S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-150
–––
–––
-3.0
–––
–––
–––
–––
–––
-0.17
120
–––
–––
–––
–––
–––
–––
–––
150
-5.0
-25
-250
-100
100
nA
V
Conditions
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
mΩ V
GS
= -10V, I
D
= -16A
V
µA
f
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -120V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
V
GS
= -20V
V
GS
= 20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
71
21
32
21
70
35
30
2210
370
89
2220
170
340
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
S
I
D
= -16A
Conditions
V
DS
= -50V, I
D
= -16A
V
DS
= -120V
V
GS
= -10V
V
DD
= -75V
I
D
= -16A
R
G
= 3.9Ω
V
GS
= -10V
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -120V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -120V
f
f
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
Max.
210
-16
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
150
860
-27
A
-110
-1.6
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
f
T
J
= 25°C, I
F
= -16A, V
DD
= -25V
di/dt = -100A/µs
f
2
www.irf.com
IRF6218S/LPbF
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-ID, Drain-to-Source Current (A)
10
BOTTOM
-ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
1
-4.5V
0.1
1
-4.5V
≤
60µs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
0.1
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current
(Α)
ID = -27A
VGS = -10V
2.0
T J = 175°C
10
1.5
1.0
1.0
2
4
6
VDS = 50V
≤60µs
PULSE WIDTH
8
10
12
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
-V GS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
www.irf.com
3
IRF6218S/LPbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
ID= -16A
-V GS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
10000
VDS= 120V
VDS= 75V
VDS= 30V
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
0
10
20
30
40
50
60
70
80
-V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
1.00
T J = 25°C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
100µsec
1msec
10msec
1000
0.10
VGS = 0V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V SD, Source-to-Drain Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF6218S/LPbF
30
V
DS
25
-I D, Drain Current (A)
R
D
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
15
10
Fig 10a.
Switching Time Test Circuit
5
0
25
50
75
100
125
150
175
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.264
0.000285
0.206
0.140
0.001867
0.013518
0.01
τ
1
τ
2
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
20
V
DD
5
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