Agilent HLMP-HD57
5 mm Standard Oval Precision Optical
Performance Red LED
Data Sheet
Features
• Well defined spatial radiation
pattern
• High brightness material
• Red AlInGaP 630 nm
Description
This Precision Optical Performance
Oval LED is specifically designed for
Full Color/Video and Passenger
Information Signs. The Oval shaped
radiation pattern and high luminous
intensity ensure that this device is
excellent for wide field of view out-
door applications where a wide
viewing angle and readability in
sunlight are essential. This lamp has
Package Dimensions
1.50 MAX.
(0.059)
10.85
±
0.50
(0.427
±
0.019)
1.50
±
0.15
(0.059
±
0.006)
0.70 MAX.
(0.028)
0.50
±
0.10 SQ. TYP.
(0.020
±
0.004)
NOTE:
MEASURED AT BASE OF LENS.
3.80
(0.150)
very smooth, matched radiation
patterns ensuring consistent color
mixing in full color applications,
message uniformity across the
viewing angle of the sign. High
efficiency LED material is used in
this lamp: Aluminium Indium
Gallium Phosphide (AlInGaP) for
Red Color. The higher performance
AlInGaP II is used.
Benefits
• Viewing angle designed for wide
field of view applications
• Superior performance for outdoor
environments
Applications
• Full color signs
• Commercial outdoor advertising
5.20
(0.204)
2.54
(0.10)
7.00
(0.275)
24.00 MIN.
(0.945)
1.00 MIN.
(0.039)
NOTES:
1. DIMENSIONS IN MILLIMETERS (INCHES).
2. TOLERANCE
±
0.25 mm UNLESS OTHERWISE NOTED.
Device Selection Guide
Color and
Dominant
Wavelength
λ
d
(nm) Typ.
Red 630
Luminous
Intensity
Iv (mcd) at
20 mA Min.
680
Luminous
Intensity
Iv (mcd) at
20 mA Max.
1900
Part Number
HLMP-HD57-NROxx
Tinting
Type
Red
Notes:
1. The luminous intensity is measured on the mechanical axis of the lamp package.
2. The optical axis is closely aligned with the package mechanical axis.
3. The dominant wavelength,
λ
d
, is derived from the Chromaticity Diagram and represents the color of the lamp.
4. Tolerance for luminous intensity is
±
15%.
Part Numbering System
HLMP - x x xx - x x x xx
Mechanical Options
00: Bulk Packaging
zz: Flexi-bin; Ammo Packs
Color Bin Selections
0: No Color Bin Limitation
Maximum Intensity Bin
0: No Iv Bin Limitation
Minimum Intensity Bin
Refer to Device Selection Guide
Color
D: 630 nm Red
Package
H: 5 mm Oval 40º x 100º
2
Absolute Maximum Ratings at T
A
= 25˚C
Parameter
DC Forward Current
[1]
Peak Pulsed Forward Current
Average Forward Current
Power Dissipation
Reverse Voltage
LED Junction Temperature
Operating Temperature Range
Storage Temperature Range
Solder Dipping Temperature
[2]
Wave Soldering Temperature
[2]
Notes:
1. Derate linearly as shown in Figure 3.
2. 1.59 mm (0.060) below body.
Value
50 mA
100 mA
30 mA
140 mW
5 V (I
R
= 100
µA)
130˚C
–40˚C to +100˚C
–40˚C to +120˚C
260˚C for 5 secs
250˚C for 3 secs
Electrical/Optical Characteristics
T
A
= 25˚C
Parameter
Forward Voltage
Reverse Voltage
Capacitance
Thermal Resistance
Viewing Angle
Major Axis
Minor Axis
Dominant Wavelength
Peak Wavelength
Symbol
V
F
V
R
C
Rθ
J-PIN
Min.
5
Typ.
2.2
20
40
240
Max.
2.4
Units
V
pF
˚C/W
Test Conditions
I
F
= 20 mA
I
R
= 100
µA
V
F
= 0, f = 1 MHz
LED Junction-to-Cathode
Lead
2θ
1/2
λ
d
λ
p
100
40
630
639
deg
nm
nm
I
F
= 20 mA
Peak of Wavelength of
Spectral Distribution at
I
F
= 20 mA
Wavelength Width at
Spectral Distribution Power
Point at I
F
= 20 mA
Emitted luminous power/
Emitted radiant power
Spectral Halfwidth
∆λ
1/2
17
nm
Luminous Efficacy
η
v
155
lm/W
Notes:
1. 2θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the on axis intensity.
2. The radiant intensity, Ie in watts per steradian, may be found from the equation Ie = Iv/η
v
where Iv is the luminous intensity in candelas and
η
v
is the luminous efficacy in lumens/watt.
3
1.0
RELATIVE INTENSITY
(NORMALIZED AT 20 mA)
2.5
RELATIVE INTENSITY
2.0
I
F
– FORWARD CURRENT – mA
50
40
Rθ
JA
= 585° C/W
30
Rθ
JA
= 780° C/W
20
10
0
1.5
0.5
1.0
0.5
0
550
0
600
650
700
0
10
20
30
40
50
0
20
40
60
80
100
WAVELENGTH – nm
FORWARD CURRENT – mA
T
A
– AMBIENT TEMPERATURE – °C
Figure 1. Relative intensity vs. wavelength.
Figure 2. Relative luminous intensity vs.
forward current.
Figure 3. Forward current vs. ambient
temperature.
50
I
F
– FORWARD CURRENT – mA
1.0
30
RELATIVE INTENSITY
40
0.5
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
-90
-70
-50
-30
-10
10
30
50
70
90
V
F
– FORWARD VOLTAGE – V
ANGLE – DEGREES
Figure 4. Forward current vs. forward voltage.
Figure 5. Spatial radiation pattern-minor axis.
1.0
RELATIVE INTENSITY
0.5
Intensity Bin Limits (mcd at 20 mA)
Bin Name
Min.
Max.
N
680
880
P
880
1150
Q
1150
1500
R
1500
1900
Tolerance will be
±
15% of these limits.
Note:
1. Bin categories are established for
classification of products. Products may
not be available in all bin categories.
0
-90
-70
-50
-30
-10
10
30
50
70
90
ANGLE – DEGREES
Figure 6. Spatial radiation pattern-major axis.
4
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
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Japan: (+81 3) 3335-8152 (Domestic/Interna-
tional), or 0120-61-1280 (Domestic Only)
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Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 2004-2005 Agilent Technologies, Inc.
Obsoletes 5989-2917EN
September 15, 2005
5989-3877EN
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