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MX29F800BTC-90G: 产品描述Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48; 产品类别存储存储; 文件大小442KB，共42页; 制造商Macronix; 官网地址http://www.macronix.com/en-us/Pages/default.aspx; 标准

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MX29F800BTC-90G概述

Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48

MX29F800BTC-90G规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Macronix
零件包装代码	TSOP1
包装说明	TSOP1, TSSOP48,.8,20
针数	48
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	90 ns
备用内存宽度	8
启动块	BOTTOM
命令用户界面	YES
数据轮询	YES
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-G48
长度	18.4 mm
内存密度	8388608 bit
内存集成电路类型	FLASH
内存宽度	16
功能数量	1
部门数/规模	1,2,1,15
端子数量	48
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	512KX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1
封装等效代码	TSSOP48,.8,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
电源	5 V
编程电压	5 V
认证状态	Not Qualified
就绪/忙碌	YES
座面最大高度	1.2 mm
部门规模	16K,8K,32K,64K
最大待机电流	0.000005 A
最大压摆率	0.05 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
切换位	YES
类型	NOR TYPE
宽度	12 mm

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MX29F800T/B

8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY

FEATURES

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

- 5.0V only operation for read, erase and program

operation

• Fast access time: 70/90/120ns

• Low power consumption

- 50mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte/word Programming (7us/12us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

• Status Reply

- Data polling & Toggle bit for detection of program and

•

erase operation completion.

Ready/Busy pin (RY/BY)

- Provides a hardware method of detecting program

or erase operation completion.

Sector protection

- Sector protect/chip unprotect for 5V/12V system.

- Hardware method to disable any combination of

sectors from program or erase operations

- Temporary sector unprotect allows code changes in

previously locked sectors.

100,000 minimum erase/program cycles

Latch-up protected to 100mA from -1V to VCC+1V

Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

Low VCC write inhibit is equal to or less than 3.2V

Package type:

- 44-pin SOP

- 48-pin TSOP

Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

•

GENERAL DESCRIPTION

The MX29F800T/B is a 8-mega bit Flash memory or-

ganized as 1M bytes of 8 bits or 512K words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29F800T/B is packaged in 44-pin SOP, 48-pin

TSOP. It is designed to be reprogrammed and erased

in system or in standard EPROM programmers.

The standard MX29F800T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F800T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F800T/B uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29F800T/B uses a 5.0V±10% VCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM0578

REV. 2.5, NOV. 05, 2004

MX29F800BTC-90G相似产品对比

	MX29F800BTC-90G	MX29F800BTC-70G	MX29F800TTC-70G	MX29F800TTC-90G	MX29F800TTC-12G	MX29F800BTC-12G
描述	Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48	Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, MO-142, TSOP1-48
是否Rohs认证	符合	符合	符合	符合	符合	符合
厂商名称	Macronix	Macronix	Macronix	Macronix	Macronix	Macronix
零件包装代码	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
包装说明	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20
针数	48	48	48	48	48	48
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	90 ns	70 ns	70 ns	90 ns	120 ns	120 ns
备用内存宽度	8	8	8	8	8	8
启动块	BOTTOM	BOTTOM	TOP	TOP	TOP	BOTTOM
命令用户界面	YES	YES	YES	YES	YES	YES
数据轮询	YES	YES	YES	YES	YES	YES
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48	R-PDSO-G48
长度	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm
内存密度	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	16	16	16	16	16	16
功能数量	1	1	1	1	1	1
部门数/规模	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15
端子数量	48	48	48	48	48	48
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
封装等效代码	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20	TSSOP48,.8,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	5 V	5 V	5 V	5 V	5 V	5 V
编程电压	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
就绪/忙碌	YES	YES	YES	YES	YES	YES
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
部门规模	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K
最大待机电流	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
最大压摆率	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
切换位	YES	YES	YES	YES	YES	YES
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm

MX29F800BTC-90G

MX29F800BTC-90G概述

MX29F800BTC-90G规格参数

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