300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 3 PIN
MMBF2201NT3规格参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
ON Semiconductor(安森美)
零件包装代码
SC-70
包装说明
SC-70, 3 PIN
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压
20 V
最大漏极电流 (ID)
0.3 A
最大漏源导通电阻
1 Ω
FET 技术
METAL-OXIDE SEMICONDUCTOR
JESD-30 代码
R-PDSO-G3
JESD-609代码
e0
元件数量
1
端子数量
3
工作模式
ENHANCEMENT MODE
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
240
极性/信道类型
N-CHANNEL
认证状态
Not Qualified
表面贴装
YES
端子面层
TIN LEAD
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
30
晶体管应用
SWITCHING
晶体管元件材料
SILICON
MMBF2201NT3文档预览
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
MMBF2201NT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs
TMOS Single N-Channel
Field Effect Transistors
Part of the GreenLine™ Portfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in small power management circuitry. Typical
applications are dc–dc converters, power management in
portable and battery–powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
•
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
•
Miniature SC–70 / SOT– 323 Surface Mount Package Saves
Board Space
™
3 DRAIN
N – CHANNEL
ENHANCEMENT– MODE
TMOS MOSFET
rDS(on) = 1.0 OHM
1
GATE
2 SOURCE
CASE 419–02, Style 7
SC–70/SOT–323
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current
— Continuous @ TA = 70°C
Drain Current
— Pulsed Drain Current (tp
≤
10
µs)
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
R
θJA
TL
Value
20
±
20
300
240
750
150
1.2
– 55 to 150
833
260
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C/W
°C
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
MMBF2201NT1
MMBF2201NT3
Reel Size
7″
13″
Tape Width
8 mm embossed tape
8 mm embossed tape
Quantity
3000
10,000
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
3–60
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBF2201NT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
µA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge (See Figure 5)
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
IS
ISM
VSD
—
—
—
—
—
0.85
0.3
0.75
—
V
A
(
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50
Ω)
td(on)
tr
td(off)
tf
QT
—
—
—
—
—
2.5
2.5
15
0.8
1400
—
—
—
—
—
pC
ns
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
Ciss
Coss
Crss
—
—
—
45
25
5.0
—
—
—
pF
VGS(th)
rDS(on)
—
—
gFS
—
0.75
1.0
450
1.0
1.4
—
mMhos
1.0
1.7
2.4
Vdc
Ohms
V(BR)DSS
IDSS
—
—
IGSS
—
—
—
—
1.0
10
±100
nAdc
20
—
—
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
4
7
8
2
3
5
6
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
9
10
VGS = 2.5 V
VGS = 3 V
VGS = 3.5 V
RDS , ON RESISTANCE (OHMS)
ID , DRAIN CURRENT (AMPS)
VGS = 4 V
1.6
1.4
1.2
VGS = 4.5 V
1.0
ID = 100 mA
0.8
0.6
0.4
0.2
0
– 60 – 40 – 20
0
20 40 60 80
TEMPERATURE (°C)
100 120 140 160
VGS = 10 V
ID = 300 mA
Figure 1. Typical Drain Characteristics
Figure 2. On Resistance versus Temperature
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3–61
MMBF2201NT1
TYPICAL CHARACTERISTICS
10
RDS , ON RESISTANCE (OHMS)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
GATE – SOURCE VOLTAGE (VOLTS)
9
10
0
0.1
0.2
0.5
0.3
0.4
0.6
ID, DRAIN CURRENT (AMPS)
0.7
0.8
VGS = 4.5 V
RDS , ON RESISTANCE (OHMS)
8
ID = 300 mA
6
4
VGS = 10 V
2
0
Figure 3. On Resistance versus Gate – Source
Voltage
Figure 4. On Resistance versus Drain Current
1.0
45
40
VGS = 0 V
F = 1 mHz
I S , SOURCE CURRENT (AMPS)
35
0.1
C, CAPACITANCE (pF)
30
25
20
15
10
5
Coss
Crss
0
2
4
8
12
16
6
10
14
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
18
20
Ciss
0.01
0.001
0
0.1
0.2 0.3 0.4
0.5 0.6
0.7 0.8 0.9
VSD, SOURCE – DRAIN FORWARD VOLTAGE (VOLTS)
1.0
0
Figure 5. Source – Drain Forward Voltage
Figure 6. Capacitance Variation
1.0
0.9
I D , DRAIN CURRENT (AMPS)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE – SOURCE VOLTAGE (VOLTS)
4.0
4.5
– 55
25
150
Figure 7. Transfer Characteristics
3–62
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Tape and Reel Specifications
and Packaging Specifications
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the “peel–back” cover tape.
•
•
•
•
Two Reel Sizes Available (7″ and 13″)
Used for Automatic Pick and Place Feed Systems
Minimizes Product Handling
EIA 481, –1, –2
•
SOD–123, SC–59, SC–70/SOT–323, SC–70ML/SOT–363,
SOT–23, TSOP–6, in 8 mm Tape
•
SOT–223 in 12 mm Tape
•
SO–14, SO–16 in 16 mm Tape
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SOD–123
8 mm
SC–59, SC–70/SOT–323, SOT–23
8 mm
SC–70ML/SOT–363, TSOP–6
T1 ORIENTATION
8 mm
SOT–223
12 mm
SO–14, 16
16 mm
SC–70ML/SOT–363
T2 ORIENTATION
8 mm
DIRECTION
OF FEED
EMBOSSED TAPE AND REEL ORDERING INFORMATION
Tape Width
(mm)
8
8
8
16
16
16
16
8
8
8
8
12
12
8
8
8
Pitch
(inch)
Reel Size
mm
(inch)
178
178
330
178
330
178
330
178
330
178
330
178
330
178
178
178
(7)
(7)
(13)
(7)
(13)
(7)
(13)
(7)
(13)
(7)
(13)
(7)
(13)
(7)
(7)
(7)
Devices Per Reel
and Minimum
Order Quantity
3,000
3,000
10,000
500
2,500
500
2,500
3,000
10,000
3,000
10,000
1,000
4,000
3,000
3,000
3,000
Device
Suffix
T1
T1
T3
R1
R2
R1
R2
T1
T3
T1
T3
T1
T3
T1
T2
T1
Package
SC–59
SC–70/SOT–323
SO–14
SO–16
SOD–123
SOT–23
SOT–223
SC–70ML/SOT–363
TSOP–6
mm
4.0
±
0.1 (.157
±
.004)
4.0
±
0.1 (.157
±
.004)
8.0
±
0.1 (.315
±
.004)
8.0
±
0.1 (.315
±
.004)
4.0
±
0.1 (.157
±
.004)
4.0
±
0.1 (.157
±
.004)
8.0
±
0.1 (.315
±
.004)
4.0
±
0.1 (.157
±
.004)
4.0
±
0.1 (.157
±
.004)
Tape and Reel Specifications
6–2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
10 Pitches Cumulative Tolerance on Tape
±
0.2 mm
(± 0.008″)
E
Top Cover
Tape
A0
B0
P
Embossment
Center Lines
of Cavity
D1
For Components
2.0 mm x 1.2 mm and Larger
K
t
D
P0
P2
F
W
B1
K0
See
Note 1
For Machine Reference Only
Including Draft and RADII
Concentric Around B0
User Direction of Feed
* Top Cover Tape
Thickness (t1)
0.10 mm
(.004″) Max.
Bar Code Label
R Min
Tape and Components
Shall Pass Around Radius “R”
Without Damage
Bending Radius
10°
Maximum Component Rotation
100 mm
(3.937″)
Embossed Carrier
Embossment
1 mm Max
Typical Component
Cavity Center Line
Tape
1 mm
(.039″) Max
Typical Component
Center Line
Camber (Top View)
Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
250 mm
(9.843″)
DIMENSIONS
Tape
Size
8 mm
12 mm
16 mm
24 mm
B1 Max
4.55 mm
(.179″)
8.2 mm
(.323″)
12.1 mm
(.476″)
20.1 mm
(.791″)
D
1.5 + 0.1 mm
– 0.0
( 0 9 + .004″
(.059 004
– 0.0)
D1
1.0 Min
(.039″)
1.5 mm Min
(.060″)
E
1.75
±
0.1 mm
(.069
±
.004″)
F
3.5
±
0.05 mm
(.138
±
.002″)
5.5
±
0.05 mm
(.217
±
.002″)
7.5
±
0.10 mm
(.295
±
.004″)
11.5
±
0.1 mm
(.453
±
.004″)
K
2.4 mm Max
(.094″)
6.4 mm Max
(.252″)
7.9 mm Max
(.311″)
11.9 mm Max
(.468″)
P0
4.0
±
0.1 mm
(.157
±
.004″)
P2
2.0
±
0.1 mm
(.079
±
.002″)
R Min
25 mm
(.98″)
30 mm
(1.18″)
T Max
0.6 mm
(.024″)
W Max
8.3 mm
(.327″)
12
±
.30 mm
(.470
±
.012″)
16.3 mm
(.642″)
24.3 mm
(.957″)
Metric dimensions govern — English are in parentheses for reference only.
NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,
NOTE 1:
the component cannot rotate more than 10° within the determined cavity.
NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.
NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 5.12–3.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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