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MT48H8M32LFB5-75IT

产品描述Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90
产品类别存储    存储   
文件大小3MB,共77页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 选型对比 全文预览

MT48H8M32LFB5-75IT概述

Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90

MT48H8M32LFB5-75IT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明VFBGA, BGA90,9X15,32
针数90
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间5.4 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)133 MHz
I/O 类型COMMON
交错的突发长度1,2,4,8
JESD-30 代码R-PBGA-B90
JESD-609代码e1
长度13 mm
内存密度268435456 bit
内存集成电路类型SYNCHRONOUS DRAM
内存宽度32
功能数量1
端口数量1
端子数量90
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8MX32
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装等效代码BGA90,9X15,32
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
电源1.8 V
认证状态Not Qualified
刷新周期8192
座面最大高度1 mm
自我刷新YES
连续突发长度1,2,4,8,FP
最大待机电流0.003 A
最大压摆率0.115 mA
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度8 mm

文档预览

下载PDF文档
256Mb: x16, x32 Mobile SDRAM
Features
Mobile SDRAM
MT48H16M16LF – 4 Meg x 16 x 4 banks
MT48H8M32LF – 2 Meg x 32 x 4 banks
Features
• Fully synchronous; all signals registered on positive
edge of system clock
• V
DD
/V
DDQ
= 1.70–1.95V
• Internal, pipelined operation; column address can
be changed every clock cycle
• Four internal banks for concurrent operation
• Programmable burst lengths: 1, 2, 4, 8, or
continuous page
• Auto precharge, includes concurrent auto precharge
• Auto refresh and self refresh modes
• LVTTL-compatible inputs and outputs
• On-chip temperature sensor to control refresh rate
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive (DS)
• 64ms refresh period (8192 rows)
Table 1:
Addressing
16 Meg x 16
8 Meg x 32
2 Meg x 32 x 4
banks
8K
4K (A[11:0])
4 (BA[1:0])
512 (A[8:0])
Configuration
Refresh count
Row addressing
Bank addressing
Column addressing
4 Meg x 16 x 4
banks
8K
8K (A[12:0])
4 (BA[1:0])
512 (A[8:0])
Table 2:
Key Timing Parameters
CL = CAS (READ) latency
Clock Rate
(MHz)
Access Time Data
Speed
Setup
Grade CL = 2 CL = 3 CL = 2 CL = 3 Time
-75
-8
104
100
133
125
8ns
9ns
6ns
7ns
1.5ns
2.5ns
Data
Hold
Time
1ns
1ns
Options
• V
DD
/V
DDQ
1.8V/1.8V
• Configuration
16 Meg x 16 (4 Meg x 16 x 4 banks)
8 Meg x 32 (2 Meg x 32 x 4 banks)
• Plastic “green” package
54-ball VFBGA (8mm x 9mm)
90-ball VFBGA (8mm x 13mm)
• Timing – cycle time
7.5ns at CL = 3
8ns at CL = 3
• Power
Standard I
DD2P
/I
DD7
Low I
DD2P
/I
DD7
• Operating temperature range
Commercial (0° to +70°C)
Industrial (–40°C to +85°C)
• Design revision
Marking
H
16M16
8M32
BF
B5
-75
-8
None
L
None
IT
:G
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 6/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT48H8M32LFB5-75IT相似产品对比

MT48H8M32LFB5-75IT MT48H8M32LFB5-75:G MT48H8M32LFB5-10 MT48H16M16LFBF-75IT MT48H16M16LFBF-75:G MT48H8M32LFB5-10IT MT48H8M32LFB5-8IT
描述 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, GREEN, PLASTIC, VFBGA-54 Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, GREEN, PLASTIC, VFBGA-54 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
厂商名称 Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
零件包装代码 BGA BGA BGA BGA BGA BGA BGA
包装说明 VFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32 VFBGA, BGA54,9X9,32 VFBGA, BGA54,9X9,32 VFBGA, BGA90,9X15,32 VFBGA, BGA90,9X15,32
针数 90 90 90 54 54 90 90
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 5.4 ns 5.4 ns 7 ns 5.4 ns 5.4 ns 7 ns 7 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 133 MHz 133 MHz 104 MHz 133 MHz 133 MHz 104 MHz 125 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON
交错的突发长度 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 代码 R-PBGA-B90 R-PBGA-B90 R-PBGA-B90 R-PBGA-B54 R-PBGA-B54 R-PBGA-B90 R-PBGA-B90
JESD-609代码 e1 e1 e1 e1 e1 e1 e1
长度 13 mm 13 mm 13 mm 9 mm 9 mm 13 mm 13 mm
内存密度 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
内存集成电路类型 SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 32 32 32 16 16 32 32
功能数量 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1
端子数量 90 90 90 54 54 90 90
字数 8388608 words 8388608 words 8388608 words 16777216 words 16777216 words 8388608 words 8388608 words
字数代码 8000000 8000000 8000000 16000000 16000000 8000000 8000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 70 °C 85 °C 70 °C 85 °C 85 °C
最低工作温度 -40 °C - - -40 °C - -40 °C -40 °C
组织 8MX32 8MX32 8MX32 16MX16 16MX16 8MX32 8MX32
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VFBGA VFBGA VFBGA VFBGA VFBGA VFBGA VFBGA
封装等效代码 BGA90,9X15,32 BGA90,9X15,32 BGA90,9X15,32 BGA54,9X9,32 BGA54,9X9,32 BGA90,9X15,32 BGA90,9X15,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 260 260 260 260 260 260 260
电源 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 8192 4096 8192 8192 8192 8192 8192
座面最大高度 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
自我刷新 YES YES YES YES YES YES YES
连续突发长度 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
最大待机电流 0.003 A 0.00001 A 0.003 A 0.003 A 0.00001 A 0.003 A 0.003 A
最大压摆率 0.115 mA 0.12 mA 0.11 mA 0.1 mA 0.09 mA 0.11 mA 0.12 mA
最大供电电压 (Vsup) 1.95 V 1.95 V 1.9 V 1.95 V 1.95 V 1.9 V 1.9 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
表面贴装 YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 BALL BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30
宽度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm

 
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