Power Field-Effect Transistor
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Nexperia |
| 包装说明 | DPAK-3 |
| Reach Compliance Code | unknown |
| 其他特性 | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas） | 34 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V |
| 最大漏极电流 (ID) | 19 A |
| 最大漏源导通电阻 | 0.075 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 76 A |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| PHD21N06LT/T3 | PHB21N06LT | PHB21N06LTT/R | PHB21N06LT/T3 | PHB21N06LT-T | PHD21N06LT | 934055349118 | 934054570118 | PHP21N06LT | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor | Power Field-Effect Transistor | Power Field-Effect Transistor | Power Field-Effect Transistor | Power Field-Effect Transistor | Power Field-Effect Transistor | Power Field-Effect Transistor | Power Field-Effect Transistor | Power Field-Effect Transistor |
| 厂商名称 | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia | Nexperia |
| 包装说明 | DPAK-3 | SMALL OUTLINE, R-PSSO-G2 | D2PAK-3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | DPAK-3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | not_compliant | not_compliant | compliant | compliant | compliant | compliant | not_compliant | compliant |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas） | 34 mJ | 34 mJ | 34 mJ | 34 mJ | 34 mJ | 34 mJ | 34 mJ | 34 mJ | 34 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (ID) | 19 A | 19 A | 19 A | 19 A | 19 A | 19 A | 19 A | 19 A | 19 A |
| 最大漏源导通电阻 | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω | 0.075 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 76 A | 76 A | 76 A | 76 A | 76 A | 76 A | 76 A | 76 A | 76 A |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | NO |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否Rohs认证 | 符合 | 符合 | 符合 | - | - | 符合 | 符合 | 符合 | 符合 |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 245 | 245 | - | - | NOT SPECIFIED | NOT SPECIFIED | - | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | - | - |
| JESD-609代码 | - | e3 | e3 | - | - | e3 | - | e3 | e3 |
| 端子面层 | - | Tin (Sn) | Tin (Sn) | - | - | TIN | - | Tin (Sn) | Matte Tin (Sn) |
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