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GT28F640C3BC90

产品描述Flash, 4MX16, 90ns, PBGA48, CSP, MICRO, BGA-48
产品类别存储    存储   
文件大小355KB,共70页
制造商Numonyx ( Micron )
官网地址https://www.micron.com
下载文档 详细参数 全文预览

GT28F640C3BC90概述

Flash, 4MX16, 90ns, PBGA48, CSP, MICRO, BGA-48

GT28F640C3BC90规格参数

参数名称属性值
厂商名称Numonyx ( Micron )
零件包装代码BGA
包装说明CSP, MICRO, BGA-48
针数48
Reach Compliance Codeunknown
ECCN代码3A991.B.1.A
最长访问时间90 ns
其他特性USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK
启动块BOTTOM
JESD-30 代码R-PBGA-B48
长度13 mm
内存密度67108864 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
端子数量48
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码TBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE
并行/串行PARALLEL
编程电压3 V
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距1 mm
端子位置BOTTOM
类型NOR TYPE
宽度10 mm

文档预览

下载PDF文档
3 Volt Advanced+ Boot Block Flash
Memory
28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)
Preliminary Datasheet
Product Features
s
s
s
s
s
s
s
Flexible SmartVoltage Technology
— 2.7 V–3.6 V Read/Program/Erase
— 12 V for Fast Production Programming
High Performance
— 2.7 V–3.6 V: 70 ns Max Access Time
Optimized Architecture for Code Plus Data
Storage
— Eight 4-Kword Blocks, Top or Bottom
Locations
— Up to One Hundred-Twenty-Seven 32-
Kword Blocks
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Block Locking
— Lock/Unlock Any Block
— Full Protection on Power-Up
— WP# Pin for Hardware Block Protection
— V
PP
= GND Option
— V
CC
Lockout Voltage
Low Power Consumption
— 9 mA Typical Read Power
— 7 µA Typical Standby Power with
Automatic Power Savings Feature
12 V Fast Production Program
Extended Temperature Operation
— –40 °C to +85 °C
s
s
s
s
s
s
s
128-bit Protection Register
— 64-bit Unique Device Identifier
— 64-bit User Programmable OTP Cells
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
Supports Intel
®
Flash Data Integrator
Software
— Flash Memory Manager
— System Interrupt Manager
— Supports Parameter Storage, Streaming
Data (e.g., voice)
Automated Word/Byte Program and Block
Erase
— Command User Interface
— Status Registers
Cross-Compatible Command Support
— Intel Basic Command Set
— Common Flash Interface
Standard Surface Mount Packaging
— 48-Ball CSP Packages
— 64-Ball Easy BGA Packages
— 48-Lead TSOP Package
ETOX™ VII (0.18
µ)
Flash Technology
— 28F160/320/640C3xC
— 8-, 16- and 32-Mbit also exist on
ETOX™ VI (0.25
µ)
Flash Technology
The 3 Volt Advanced+ Boot Block Flash memory, manufactured on Intel’s latest 0.18 µ
technology, represents a feature-rich solution for low power applications. 3 Volt Advanced+
Boot Block Flash memory devices incorporate low voltage capability (2.7 V read, program and
erase) with high-speed, low-power operation. Flexible block locking allows any block to be
independently locked or unlocked. Add to this the Intel
®
Flash Data Integrator (IFDI) software
and you have a cost-effective, flexible, monolithic code plus data storage solution. Intel
®
3 Volt
Advanced+ Boot Block products will be available in 48-lead TSOP, 48-ball CSP, and 64-ball
Easy BGA packages. Additional information on this product family can be obtained by
accessing the Intel
®
Flash website: http://www.intel.com/design/flash.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290645-010
October 2000
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