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IDT71V67803S150PFG8: 产品描述Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100; 产品类别存储存储; 文件大小420KB，共23页; 制造商IDT (Integrated Device Technology); 标准

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IDT71V67803S150PFG8概述

Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

IDT71V67803S150PFG8规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	QFP
包装说明	LQFP, QFP100,.63X.87
针数	100
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	3.8 ns
其他特性	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	150 MHz
I/O 类型	COMMON
JESD-30 代码	R-PQFP-G100
JESD-609代码	e3
长度	20 mm
内存密度	9437184 bit
内存集成电路类型	CACHE SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端子数量	100
字数	524288 words
字数代码	512000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	512KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装等效代码	QFP100,.63X.87
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.05 A
最小待机电流	3.14 V
最大压摆率	0.305 mA
最大供电电压 (Vsup)	3.465 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Matte Tin (Sn) - annealed
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm

IDT71V67803S150PFG8相似产品对比

	IDT71V67803S150PFG8	IDT71V67803S166PFG8	IDT71V67803S166PF8	IDT71V67603S150PFI8	IDT71V67603S166PFG8	IDT71V67603S166PF8	IDT71V67803S150PFGI8	IDT71V67603S150PF8	IDT71V67603S150PFG8	IDT71V67603S150PFGI8
描述	Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 512KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 512KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 256KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100	Cache SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 256KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 256KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Cache SRAM, 256KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100
是否Rohs认证	符合	符合	不符合	不符合	符合	不符合	符合	不符合	符合	符合
零件包装代码	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
包装说明	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	LQFP,	LQFP,	LQFP, QFP100,.63X.87	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	LQFP, QFP100,.63X.87	LQFP,
针数	100	100	100	100	100	100	100	100	100	100
Reach Compliance Code	compliant	compliant	not_compliant	not_compliant	compliant	compliant	compliant	not_compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	3.8 ns	3.5 ns	3.5 ns	3.8 ns	3.5 ns	3.5 ns	3.8 ns	3.8 ns	3.8 ns	3.8 ns
其他特性	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609代码	e3	e3	e0	e0	e3	e0	e3	e0	e3	e3
长度	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
内存密度	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	18	18	18	36	36	36	18	36	36	36
湿度敏感等级	3	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	100	100	100	100	100	100	100	100	100	100
字数	524288 words	524288 words	524288 words	262144 words	262144 words	262144 words	524288 words	262144 words	262144 words	262144 words
字数代码	512000	512000	512000	256000	256000	256000	512000	256000	256000	256000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	85 °C	70 °C	70 °C	85 °C	70 °C	70 °C	85 °C
组织	512KX18	512KX18	512KX18	256KX36	256KX36	256KX36	512KX18	256KX36	256KX36	256KX36
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	240	240	260	240	260	240	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	MATTE TIN	TIN LEAD	Matte Tin (Sn) - annealed	Tin/Lead (Sn85Pb15)	Matte Tin (Sn) - annealed	MATTE TIN
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	30	20	20	30	20	30	20	30	30
宽度	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
是否无铅	不含铅	不含铅	-	-	不含铅	-	不含铅	-	不含铅	不含铅
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
最大时钟频率 (fCLK)	150 MHz	166 MHz	166 MHz	150 MHz	-	-	150 MHz	150 MHz	150 MHz	-
I/O 类型	COMMON	COMMON	COMMON	COMMON	-	-	COMMON	COMMON	COMMON	-
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	-	-	3-STATE	3-STATE	3-STATE	-
封装等效代码	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	-	-	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	-
电源	3.3 V	3.3 V	3.3 V	3.3 V	-	-	3.3 V	3.3 V	3.3 V	-
最大待机电流	0.05 A	0.05 A	0.05 A	0.07 A	-	-	0.07 A	0.05 A	0.05 A	-
最小待机电流	3.14 V	3.14 V	3.14 V	3.14 V	-	-	3.14 V	3.14 V	3.14 V	-
最大压摆率	0.305 mA	0.34 mA	0.34 mA	0.325 mA	-	-	0.325 mA	0.305 mA	0.305 mA	-
Base Number Matches	-	1	1	1	1	1	1	1	-	-

IDT71V67803S150PFG8

IDT71V67803S150PFG8概述

IDT71V67803S150PFG8规格参数

IDT71V67803S150PFG8相似产品对比

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