Release
by
PARA LIGHT DCC
PARA LIGHT ELECTRONICS CO., LTD.
4F, No.1, Lane 93, Chien Yi Road, Chung Ho City, Taipei, Taiwan
Tel: 886-2-2225-3733
Fax: 886-2-2225-4800
http://www.para.com.tw
E-mail:
para@para.com.tw
DATA SHEET
PART NO.: L-C191JFCT
REV: A / 3
CUSTOMER’S APPROVAL : _______________
DCC : ____________
DRAWING NO. : DS-74-07-0021
DATE : 2010-03-09
PAGE 1 of 14
PARA-FOR-065
Release
by
PARA LIGHT DCC
SURFACE MOUNT DEVICE LED
Part No. : L-C191JFCT
PACKAGE OUTLINE DIMENSIONS
REV:A / 3
Notes:
1. All dimensions are in millimeters.
2. Tolerance is
±
0.1mm (.004") unless otherwise noted.
Features
Top view, wide view angle, single color Chip LED.
Package in 8mm tape on 7" diameter reels.
Compatible with automatic Pick & Place equipment.
Compatible with Infrared and Wave soldering reflow solder processes.
EIA STD package.
I.C. compatible.
Pb free product.
Meet RoHS Green Product.
DRAWING NO. : DS-74-07-0021
PARA-FOR-068
DATE : 2010-03-09
PAGE
2 of 14
Release
by
PARA LIGHT DCC
SURFACE MOUNT DEVICE LED
Part No. : L-C191JFCT
Chip Materials
Dice Material : AlInGaP
Light Color : Super Amber
Lens Color : Water Clear
REV:A / 3
Absolute Maximum Ratings(Ta=25℃)
Symbol
P
D
I
PF
I
F
-
V
R
ESD
Topr
Tstg
Power Dissipation
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
Continuous Forward Current
De-rating Linear From 25
℃
Reverse Voltage
Electrostatic Discharge Threshold(HBM)
Note A
Operating Temperature Range
Storage Temperature Range
Parameter
Rating
75
80
25
0.25
5
2000
-40 ~ +85
-40 ~ +85
Unit
mW
mA
mA
mA/
℃
V
V
℃
℃
Note A :
HBM : Human Body Model. Seller gives no other assurances regarding the ability of to
withstand ESD.
Electro-Optical Characteristics(Ta=25℃)
Parameter
Luminous Intensity
Viewing Angle
Peak Emission
Wavelength
Dominant Wavelength
Spectral Line
Half-Width
Forward Voltage
Reverse Current
Symbol
IV
2θ1/2
λp
λd
Δλ
VF
IR
Min.
25.0
Typ.
80.0
130
611
605
17
2.0
2.6
10
Max.
Unit
mcd
deg
nm
nm
nm
V
μA
IF =20mA
VR = 5V
Test Condition
IF=20mA
Note 2
Measurement @Peak
IF=20mA
DRAWING NO. : DS-74-07-0021
PARA-FOR-068
DATE : 2010-03-09
PAGE
3 of 14
Release
Release
by
PARA LIGHT DCC
by
PARA LIGHT DCC
SURFACE MOUNT DEVICE LED
Part No. : L-C191JFCT
REV:A / 3
Bin Code List
Luminous Intensity(IV), Unit:mcd@20mA
Bin Code
N
P
Q
R
Min
28.0
45.0
71.0
112.0
Tolerance of each bin are±15%
Max
45.0
71.0
112.0
180.0
Notes:
1. Luminous intensity is measured with a light sensor and filter combination that proximities
the CIE eye-response curve.
2.
θ1/2
is the off-axis angle at which the luminous intensity is half the axial luminous
intensity.
3. The dominant wavelength
λd
is derived from the CIE chromaticity diagram and
represents the single wavelength which defines the color of the device.
4. Caution in ESD :
Static Electricity and surge damages the LED. It is recommended use a wrist band or
anti-electrostatic glove when handling the LED. All devices, equipment and machinery
must be properly grounded.
5. Major standard testing equipment by “Instrument System” Model : CAS140B Compact
Array Spectrometer and “KEITHLEY” Source Meter Model : 2400.
DRAWING NO. : DS-74-07-0021
PARA-FOR-068
DATE : 2010-03-09
PAGE
4 of 14
Release
by
PARA LIGHT DCC
SURFACE MOUNT DEVICE LED
Part No. : L-C191JFCT
Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
REV:A / 3
Fig.2 Forward Current vs.Forward Voltage
Luminous lntensity(mcd)
Fig.3 Luminous Intensity vs.Forward Current
1000
Relative Luminous lntensity
Normalized of 20mA
Relative luminous intensity(%)
100
10
1
-60 -
4
0 -20 -0 20
4
0 60 80 100
Ambient Temperature Ta(
℃
)
Fig.
4
Relative Luminous Intensity vs.Forward Current
Fig.5 Luminous Intensity vs.Ambient Temperature
50
Forward Current IF(mA)
40
30
20
10
0.7
1
0
20
40
60
80
100
0.5 0.3
1.0
0.9
0.8
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
0.1 0.2 0.4 0.6
Ambient Temperature Ta(
℃
)
Fig.6 Forward Current Derating Curve
Fig.7 Relative Intensity vs.Angle
DRAWING NO. : DS-74-07-0021
PARA-FOR-068
DATE : 2010-03-09
PAGE
5 of 14
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
