SMA6TY
Automotive 600 W Transil™ in SMA package
Datasheet
−
production data
Features
■
Peak pulse power:
– 600 W (10/1000 µs)
– 4 kW (8/20 µs)
Stand off voltage range: from 5 V to 70 V
Unidirectional and bidirectional types
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating T
j max
: 150 °C
JEDEC registered package outline
Resin meets UL 94, V0
AEC-Q101 qualified
K
A
■
■
■
Unidirectional
Bidirectional
SMA
(JEDEC DO-214AC)
■
■
■
■
Description
The SMA6TY Transil series has been designed to
protect sensitive automotive circuits against
surges defined in ISO 7637-2 and against
electrostatic discharges according to ISO 10605.
The planar technology makes this device
compatible with high-end circuits where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. SMA6TY are packaged in SMA (SMA
footprint in accordance with IPC 7531 standard).
Complies with the following standards
■
ISO 10605, C = 150 pF, R = 330
Ω:
– 30 kV (air discharge)
– 30 kV (contact discharge)
ISO 10605, C = 330 pF, R = 330
Ω:
– 30 kV (air discharge)
– 30 kV (contact discharge)
ISO 7637-2
(a)
– Pulse 1: V
S
= -100 V
– Pulse 2a: V
S
= +50 V
– Pulse 3a: V
S
= -150 V
– Pulse 3b: V
S
= +100 V
■
■
a. Not applicable to parts with stand-off voltage lower
than the average battery voltage (13.5 V)
TM:
Transil is a trademark of STMicroelectronics
March 2012
This is information on a product in full production.
Doc ID 17869 Rev 3
1/11
www.st.com
11
Characteristics
SMA6TY
1
Table 1.
Symbol
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
ISO 10605 (C = 330 pF, R = 330
Ω):
Contact discharge
Air discharge
ISO 10605 (C = 150 pF, R = 330
Ω):
Contact discharge
Air discharge
T
j
initial = T
amb
Value
Unit
V
PP
Peak pulse voltage
30
30
30
30
600
-40 to 150
-65 to 150
260
kV
P
PP
T
j
T
stg
T
L
Peak pulse power dissipation
(1)
Operating junction temperature range
Storage temperature range
W
°C
Maximum lead temperature for soldering during 10 s.
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
2/11
Doc ID 17869 Rev 3
SMA6TY
Table 2.
Electrical characteristics, parameter values (T
amb
= 25 °C)
I
RM
max @ V
RM
Order code
25 °C 85 °C
µA
SMA6T6V7AY/CAY
SMA6T7V6AY/CAY
SMA6T10AY/CAY
SMA6T12AY/CAY
SMA6T14AY/CAY
SMA6T15AY/CAY
SMA6T18AY/CAY
SMA6T22AY/CAY
SMA6T24AY/CAY
SMA6T28AY/CAY
SMA6T30AY/CAY
SMA6T33AY/CAY
SMA6T39AY/CAY
SMA6T47AY/CAY
SMA6T56AY/CAY
SMA6T68AY/CAY
SMA6T82AY/CAY
1. Pulse test: t
p
< 50 ms
2. To calculate maximum clamping voltage at another surge level, use the following formula:
V
CLmax
= V
CL
- R
D
x (I
PP
- I
PPappli
) where I
PPappli
is the surge current in the application.
3. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25°C x (1 +
αT
x (T
J
- 25))
V
CL
@ T
J
= V
CL
@ 25°C x (1 +
αT
x (T
J
- 25))
4. Surge capability given for both directions for unidirectional and bidirectional types.
Characteristics
V
BR
@ I
R (1)
min. typ. max.
R
D (2)
V
CL
@ I
PP
V @ I
PP
R
D (2)
10/1000
CL
10/1000 µs
8/20 µs 8/20 µs
µs
max
mA V
(3)
A
(4)
68.0
Ω
0.029
0.04
0.098
0.114
0.133
0.193
0.263
0.375
0.444
0.516
0.690
0.84
1.16
1.42
2.28
3.17
4.38
max
V
(3)
A
(4)
Ω
0.021
0.024
0.038
0.049
0.056
0.078
0.111
0.159
αT
max
10-4/ °C
5.7
6.1
7.3
7.8
8.3
8.4
8.8
9.2
9.4
9.6
9.7
9.8
10
10.1
10.0
10.4
10.5
V
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
7.1
8.0
10.5
12.6
14.7
15.8
18.9
23.1
25.2
29.5
31.5
34.7
41.0
49.1
58.8
71.4
86.0
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
5.00 6.40 6.70
6.50 7.20 7.60
8.60 9.50 10.0
10.2 11.4 12.0
12.0 13.3 14.0
12.8 14.3 15.0
15.3 17.1 18.0
18.8 20.9 22.0
20.5 22.8 24.0
24.0 26.7 28.1
25.6 28.5 30.0
28.2 31.4 33.0
33.3 37.1 39.0
40.0 44.4 46.7
47.6 53.2 56.0
58.1 64.6 68.0
70.0 77.8 81.9
10
9.1
13.4 298
14.5 276
18.6 215
21.7 184
23.5 157
27.2 147
32.3 123
39.3 102
10 10.2 56.0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
14.5 41.0
16.7 36.0
18.8 31.0
21.2 28.0
25.2 24.0
30.6 20.0
33.2 18.0
37.8 16.0
41.5 14.5
45.7 13.1
53.9 11.1
62.8 9.70
76.6 7.80
92.0 6.50
110 5.50
42.8 93.0 0.189
44.3 80.0 0.184
53.5 75.0 0.293
59.0 68.0 0.357
69.7 57.0 0.504
73.6 48.0 0.511
100 40.0 1.030
121 33.0
120 27.0
1.50
1.27
Doc ID 17869 Rev 3
3/11
Characteristics
SMA6TY
Figure 3.
Relative variation of peak power
versus initial junction temperature
Figure 4.
Peak pulse power versus
exponential pulse duration
110
100
90
80
70
60
50
40
30
20
10
0
%
10/1000 µs
10.0
P
PP
(kW)
T
j
initial = 25 °C
1.0
t
P
(ms)
T
j
(°C)
0
25
50
75
100
125
150
175
0.1
0.01
0.10
1.00
10.00
Figure 5.
Clamping voltage versus peak pulse current exponential waveform (maximum values)
I
PP
(A)
1000.0
T j initial=25 °C
100.0
8/20 µs
10.0
10/1000 µs
SMA6T6V7AY/CAY
1.0
SMA6T30AY/CAY
SMA6T82AY/CAY
V CL
(V)
0.1
1
10
100
1000
4/11
Doc ID 17869 Rev 3
SMA6TY
Figure 6.
ISO 7637-2 pulse 1 response (V
S
= -100 V)
10
0
-10
-20
-30
-40
Characteristics
Voltage
SMA6T39AY
SMA6T39CAY
-50
-0.5
0.0
0.5
1.0
Time(ms)
1.5
2.0
2.5
5
Current
0
SMA6T39AY
-5
SMA6T39CAY
-10
-15
-0.5
0.0
0.5
1.0
Time(ms)
1.5
2.0
2.5
Figure 7.
ISO 7637-2 pulse 2a response (V
S
= 50 V)
50
Voltage
40
30
SMA6T39AY
SMA6T39CAY
20
10
0
-20
0.0
20
40
Time(µs)
60
80
100
4
Current
SMA6T39AY
0
SMA6T39CAY
-4
-20
0.0
20
40
Time(µs)
60
80
100
Doc ID 17869 Rev 3
5/11
Microchip MCU
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