Single-Ended Multiplexer, 1 Func, 8 Channel, CMOS, CQCC20
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Harris |
| 包装说明 | QCCN, LCC20,.35SQ |
| Reach Compliance Code | unknown |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER |
| JESD-30 代码 | S-CQCC-N20 |
| JESD-609代码 | e0 |
| 标称负供电电压 (Vsup) | -15 V |
| 信道数量 | 8 |
| 功能数量 | 1 |
| 端子数量 | 20 |
| 标称断态隔离度 | 50 dB |
| 最大通态电阻 (Ron) | 300 Ω |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装等效代码 | LCC20,.35SQ |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 电源 | +-15 V |
| 认证状态 | Not Qualified |
| 最大信号电流 | 0.02 A |
| 最大供电电流 (Isup) | 2.4 mA |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | YES |
| 最长断开时间 | 500 ns |
| 最长接通时间 | 500 ns |
| 切换 | BREAK-BEFORE-MAKE |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| HI4-508/883 | HI1-509/883 | HI4-509/883 | PHNR26513306 | |
|---|---|---|---|---|
| 描述 | Single-Ended Multiplexer, 1 Func, 8 Channel, CMOS, CQCC20 | Differential Multiplexer, 1 Func, 4 Channel, CMOS, CDIP16 | Differential Multiplexer, 1 Func, 4 Channel, CMOS, CQCC20 | Fixed Resistor, 4.5W, 30000000ohm, 22500V, 5% +/-Tol, 80ppm/Cel, Through Hole Mount, AXIAL LEADED |
| 包装说明 | QCCN, LCC20,.35SQ | DIP, DIP16,.3 | QCCN, LCC20,.35SQ | AXIAL LEADED |
| Reach Compliance Code | unknown | unknow | unknown | unknown |
| JESD-609代码 | e0 | e0 | e0 | e3 |
| 端子数量 | 20 | 16 | 20 | 2 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 200 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -40 °C |
| 封装形状 | SQUARE | RECTANGULAR | SQUARE | TUBULAR PACKAGE |
| 表面贴装 | YES | NO | YES | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | - |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER | DIFFERENTIAL MULTIPLEXER | DIFFERENTIAL MULTIPLEXER | - |
| JESD-30 代码 | S-CQCC-N20 | R-GDIP-T16 | S-CQCC-N20 | - |
| 标称负供电电压 (Vsup) | -15 V | -15 V | -15 V | - |
| 信道数量 | 8 | 4 | 4 | - |
| 功能数量 | 1 | 1 | 1 | - |
| 标称断态隔离度 | 50 dB | 50 dB | 50 dB | - |
| 最大通态电阻 (Ron) | 300 Ω | 300 Ω | 300 Ω | - |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | - |
| 封装代码 | QCCN | DIP | QCCN | - |
| 封装等效代码 | LCC20,.35SQ | DIP16,.3 | LCC20,.35SQ | - |
| 封装形式 | CHIP CARRIER | IN-LINE | CHIP CARRIER | - |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
| 电源 | +-15 V | +-15 V | +-15 V | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - |
| 最大信号电流 | 0.02 A | 0.02 A | 0.02 A | - |
| 最大供电电流 (Isup) | 2.4 mA | 2.4 mA | 2.4 mA | - |
| 标称供电电压 (Vsup) | 15 V | 15 V | 15 V | - |
| 最长断开时间 | 500 ns | 500 ns | 500 ns | - |
| 最长接通时间 | 500 ns | 500 ns | 500 ns | - |
| 切换 | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | - |
| 技术 | CMOS | CMOS | CMOS | - |
| 温度等级 | MILITARY | MILITARY | MILITARY | - |
| 端子形式 | NO LEAD | THROUGH-HOLE | NO LEAD | - |
| 端子节距 | 1.27 mm | 2.54 mm | 1.27 mm | - |
| 端子位置 | QUAD | DUAL | QUAD | - |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
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