unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01500X is constructed using a
thermally enhanced flanged (Cu/W) or flangeless
(Cu) ceramic package which provides excellent
thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme
mismatched load conditions unparalleled with older
semiconductor technologies.
MAGX-000035-01500S (Flangeless)
Ordering Information
Part Number
MAGX-000035-015000
MAGX-000035-01500S
MAGX-L20035-015000
MAGX-L20035-01500S
Description
Flanged, Bulk Packaging
Flangeless, Bulk Packaging
Sample Board
(1.2 - 1.4 GHz, Flanged)
Sample Board
(1.2 - 1.4 GHz, Flangeless)
1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Electrical Specifications
1
: Freq. = 1.2 - 1.4 GHz, T
A
= 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: V
DD
= 50 V, I
DQ
= 15 mA, 1 ms Pulse, 10% Duty
Output Power
Power Gain
Drain Efficiency
Droop
Load Mismatch Stability
Load Mismatch Tolerance
P
IN
= 0.5 W
P
IN
= 0.5 W
P
IN
= 0.5 W
P
IN
= 0.5 W
P
IN
= 0.5 W
P
IN
= 0.5 W
P
OUT
G
P
η
D
Droop
VSWR-S
VSWR-T
15.0
14.8
55
-
-
-
17.7
15.5
63
0.1
5:1
10:1
-
-
-
0.4
-
-
W
dB
%
dB
-
-
Rev. V1
Electrical Characteristics: T
A
= 25°C
Parameter
DC Characteristics
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 0 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
-
-
-
4.4
1.9
0.2
-
-
-
pF
pF
pF
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 2 mA
V
DS
= 5 V, I
D
= 500 mA
I
DS
V
GS (TH)
G
M
-
-5
0.35
-
-3
-
750
-2
-
µA
V
S
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Correct Device Sequencing
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (+50V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS.
2
1. Electrical Specifications measured in MACOM RF evaluation board.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Absolute Maximum Ratings
2,3,4
Parameter
Input Power
Drain Supply Voltage, V
DD
Gate Supply Voltage, V
GG
Supply Current, I
DD
Power Dissipation (P
AVG
), Pulsed @ 85°C
MTTF (T
J
<200°C)
Junction Temperature
5
Operating Temperature
Storage Temperature
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
2.
3.
4.
5.
Rev. V1
Absolute Max.
P
IN
(nominal) + 3 dB
+65 V
-8 V to 0 V
800 mA
10.3 W
600 years
200°C
-40°C to +95°C
-65°C to +150°C
See solder reflow profile
150 V
500 V
Operation of this device above any one of these parameters may cause permanent damage.
Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
For saturated performance it is recommended that the sum of (3*V
DD
+ abs(V
GG
)) <175 V.
Junction Temperature (T
J
) = T
C
+
Ө
JC
* ((V * I) - (P
OUT
- P
IN
))
Typical transient thermal resistances:
1 ms pulse, 10% duty cycle,
Ө
JC
= 5.0°C/W
For T
C
= 85°C,
T
J
= 132°C @ 50 V, 520 mA-pk, P
OUT
= 17.0 W, P
IN
= 0.5 W
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Test Fixture Assembly (
1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, V
DD
= 50 V, Idq = 15 mA
)
Test Fixture Impedances
F (GHz)
1.2
1.3
1.4
Z
IF
(Ω)
1.4 + j3.5
1.3 + j3.8
1.8 + j4.0
Z
OF
(Ω)
2.5 + j3.5
2.7 + j3.9
3.1 + j4.2
Rev. V1
Parts List
Reference Designator
C4
C15
C2
C16
C1, C10
C8
C13
C14
C17
C3, C6, C7, C9, C11, C12, R2
R3
L1, R1
R4
R5
L3, L6
L2, R6
J1, J2
4
Part
0402, 5.1 pF, ±0.1 pF
0603, 6.8 pF, ±0.1 pF
0603, 82 pF, ±10%
0603, 100 pF, ±10%
0402, 1000 pF, 100 V, 5%
0603, 30 pF, ±10%
0805, 1 µF, 100 V, ±20%
0402, 12 pF, ±10%
100 µF, 160 V, Electrolytic Capacitor
Do Not Populate
240
Ω,
0603, 5%
1.0
Ω,
0402, 5%
1.0
Ω,
1206, 5%
10
Ω,
0402, 5%
0402, 3.9 nH, 2%
0402, 0.0
Ω
Resistor
SMA Connector
Vendor
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Panasonic
-
Panasonic
Panasonic
Panasonic
Panasonic
Coilcraft
Panasonic
Tyco Electronics
Contact factory for Gerber file or additional circuit information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Application Section
Typical Performance Curves
1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, V
DD
= 50 V, Idq = 15 mA, T
A
= 25°C
Output Power and Gain Vs. Input Power
Rev. V1
Drain Efficiency Vs. Output Power
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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