power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation under
more extreme mismatch load conditions compared
with older semiconductor technologies.
Ordering Information
Part Number
MAGX-000025-150000
MAGX-000025-SB2PPR
MAGX-000025-SB1PPR
Description
Flanged
1200-1400 MHz
Evaluation Board
2500 MHz
Evaluation Board
Functional Schematic
Pin No.
1
2
3
4
Function
Vgg/RF Input
Vdd/RF Output
Vgg/RF Input
Vdd/RF Output
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Electrical Specifications
1
: Freq. = 1200-1400 MHz, T
A
= 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: V
DD
= 50 V, I
DQ
= 600 mA, 300 µs Pulse, 20% Duty
Output Power
Power Gain
Drain Efficiency
Droop
Load Mismatch Stability
Load Mismatch Tolerance
P
IN
= 2.5 W
P
IN
= 2.5 W
P
IN
= 2.5 W
P
IN
= 2.5 W
P
IN
= 2.5 W
P
IN
= 2.5 W
P
OUT
G
P
η
D
Droop
VSWR-S
VSWR-T
150
17.5
52
-
-
-
170
18
58
0.2
5:1
10:1
-
-
-
0.3
-
-
W
dB
%
dB
-
-
Rev. V1
Typical RF Characteristics
2
: Freq. = 2500 MHz, T
A
= 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: V
DD
= 50 V, I
DQ
= 600 mA, 300 µs Pulse, 20% Duty
Output Power
Power Gain
Drain Efficiency
Droop
Load Mismatch Stability
Load Mismatch Tolerance
P
IN
= 7 W
P
IN
= 7 W
P
IN
= 7 W
P
IN
= 7 W
P
IN
= 7 W
P
IN
= 7 W
P
OUT
G
P
η
D
Droop
VSWR-S
VSWR-T
-
-
-
-
-
-
125
12.5
48
0.1
5:1
10:1
-
-
-
-
-
-
W
dB
%
dB
-
-
RF Functional Tests: V
DD
= 28 V, I
DQ
= 600 mA, CW
Input Power
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
P
OUT
= 35 W
P
OUT
= 35 W
P
OUT
= 35 W
P
OUT
= 35 W
P
OUT
= 35 W
P
IN
G
P
η
D
VSWR-S
VSWR-T
-
-
-
-
-
2
12
45
5:1
10:1
-
-
-
-
-
W
dB
%
-
-
Electrical Characteristics
3
: T
A
= 25°C
Parameter
DC Characteristics (Per Side):
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics (Per Side):
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 0 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
-
-
-
26.4
11.2
1
-
-
-
pF
pF
pF
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 75 mA
V
DS
= 5 V, I
D
= 17.5 mA
I
DS
V
GS (TH)
G
M
-
-5
2
2
-3.1
2.8
5.28
-2
-
mA
V
S
Test Conditions
Symbol
Min.
Typ.
Max.
Units
2
1. Electrical Specifications measured in MACOM RF evaluation board.
2. Typical RF Characteristics measured in MACOM RF evaluation board.
3. All DC Characteristics are per side.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Absolute Maximum Ratings
4,5,6,7,8
Parameter
Supply Voltage (V
DD
)
Supply Voltage (V
GS
)
Supply Current (I
DMAX
) for CW operation at V
DD
= 28 V
Supply Current (I
DMAX
) for pulsed operation at V
DD
= 50 V
Input Power (P
IN
) for CW operation at V
DD
= 28 V
Input Power (P
IN
) for pulsed operation at V
DD
= 50 V
Absolute Max. Junction/Channel Temperature
Power Dissipation at 85 ºC for CW operation at V
DD
= 28 V
Power Dissipation at 85 ºC for pulsed operation at V
DD
= 50 V
Thermal Resistance, (T
J
= 200 ºC)
V
DD
= 28 V, I
DQ
= 600 mA, Pout = 35 W, CW
Thermal Resistance, (T
J
= 200 ºC)
V
DD
= 50 V, I
DQ
= 600 mA, Pin = 7 W, pulsed
Operating Temperature
Storage Temperature
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
4.
5.
6.
7.
8.
Rev. V1
Limit
+65 V
-8 to -2 V
5.5 A
8.3 A
P
IN
(typical) + 1.5 dB
40 dBm
200ºC
79 W
177 W
1.45 ºC/W
0.65 ºC/W
-40 to +95ºC
-65 to +150ºC
See solder reflow profile
300 V
700 V
Operation of this device above any one of these parameters may cause permanent damage.
For CW operation, Input Power limit is +1.5 dB over nominal drive required to achieve P
OUT
= 35 W.
Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
For saturated performance it is recommended that the sum of (3*V
DD
+ abs(V
GG
)) <175 V.
Pulsed operation is specified for a 300 µs Pulse, 20% Duty.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Test Fixture Impedances (Per Side)
F (MHz)
1200
1300
1400
2500
Z
IF
(1,2) (Ω)
0.8 + j0.5
0.9 + j0.2
0.5 - j0.2
1.2 - j3.4
Z
OF
(1,2) (Ω)
9.4 + j4.1
7.2 + j3.0
5.4 + j3.4
3.1 + j1.4
Rev. V1
Correct Device Sequencing
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage:
[(300 µs, 20%) = 50 V; (2.5 GHz, CW) = 28 V].
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Test Fixture Assembly (1200-1400 MHz)
Rev. V1
Test Fixture Assembly (2500 MHz)
Contact factory for Gerber file or additional circuit information.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
