DDR DRAM Module, 256MX64, 0.255ns, CMOS, SODIMM-204
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | SAMSUNG(三星) |
| 包装说明 | DIMM, DIMM204,24 |
| Reach Compliance Code | unknown |
| 访问模式 | DUAL BANK PAGE BURST |
| 最长访问时间 | 0.255 ns |
| 其他特性 | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY |
| 最大时钟频率 (fCLK) | 667 MHz |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XDMA-N204 |
| 长度 | 67.6 mm |
| 内存密度 | 17179869184 bit |
| 内存集成电路类型 | DDR DRAM MODULE |
| 内存宽度 | 64 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 204 |
| 字数 | 268435456 words |
| 字数代码 | 256000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | |
| 组织 | 256MX64 |
| 输出特性 | 3-STATE |
| 封装主体材料 | UNSPECIFIED |
| 封装代码 | DIMM |
| 封装等效代码 | DIMM204,24 |
| 封装形状 | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY |
| 电源 | 1.35 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 8192 |
| 座面最大高度 | 30.15 mm |
| 自我刷新 | YES |
| 最大待机电流 | 0.16 A |
| 最大压摆率 | 1.096 mA |
| 最大供电电压 (Vsup) | 1.45 V |
| 最小供电电压 (Vsup) | 1.283 V |
| 标称供电电压 (Vsup) | 1.35 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | OTHER |
| 端子形式 | NO LEAD |
| 端子节距 | 0.6 mm |
| 端子位置 | DUAL |
| 宽度 | 3.8 mm |
| M471B5673GB0-YH9 | M471B5673GB0-YF8 | M471B5673GB0-YK0 | M471B2873GB0-YF8 | M471B2873GB0-YH9 | M471B2873GB0-YK0 | |
|---|---|---|---|---|---|---|
| 描述 | DDR DRAM Module, 256MX64, 0.255ns, CMOS, SODIMM-204 | DDR DRAM Module, 256MX64, 0.3ns, CMOS, SODIMM-204 | DDR DRAM Module, 256MX64, 0.225ns, CMOS, SODIMM-204 | DDR DRAM Module, 128MX64, CMOS, SODIMM-204 | DDR DRAM Module, 128MX64, CMOS, SODIMM-204 | DDR DRAM Module, 128MX64, CMOS, SODIMM-204 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 包装说明 | DIMM, DIMM204,24 | DIMM, DIMM204,24 | DIMM, DIMM204,24 | DIMM, DIMM204,24 | DIMM, DIMM204,24 | DIMM, DIMM204,24 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 访问模式 | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST |
| 其他特性 | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY |
| 最大时钟频率 (fCLK) | 667 MHz | 533 MHz | 800 MHz | 533 MHz | 667 MHz | 800 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XDMA-N204 | R-XDMA-N204 | R-XDMA-N204 | R-XDMA-N204 | R-XDMA-N204 | R-XDMA-N204 |
| 长度 | 67.6 mm | 67.6 mm | 67.6 mm | 67.6 mm | 67.6 mm | 67.6 mm |
| 内存密度 | 17179869184 bit | 17179869184 bit | 17179869184 bit | 8589934592 bit | 8589934592 bit | 8589934592 bit |
| 内存集成电路类型 | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
| 内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 204 | 204 | 204 | 204 | 204 | 204 |
| 字数 | 268435456 words | 268435456 words | 268435456 words | 134217728 words | 134217728 words | 134217728 words |
| 字数代码 | 256000000 | 256000000 | 256000000 | 128000000 | 128000000 | 128000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 组织 | 256MX64 | 256MX64 | 256MX64 | 128MX64 | 128MX64 | 128MX64 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
| 封装等效代码 | DIMM204,24 | DIMM204,24 | DIMM204,24 | DIMM204,24 | DIMM204,24 | DIMM204,24 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 电源 | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
| 座面最大高度 | 30.15 mm | 30.15 mm | 30.15 mm | 30.15 mm | 30.15 mm | 30.15 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES |
| 最大待机电流 | 0.16 A | 0.16 A | 0.16 A | 0.08 A | 0.08 A | 0.08 A |
| 最大压摆率 | 1.096 mA | 0.896 mA | 1.136 mA | 0.8 mA | 1 mA | 1.04 mA |
| 最大供电电压 (Vsup) | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V | 1.45 V |
| 最小供电电压 (Vsup) | 1.283 V | 1.283 V | 1.283 V | 1.283 V | 1.283 V | 1.283 V |
| 标称供电电压 (Vsup) | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子节距 | 0.6 mm | 0.6 mm | 0.6 mm | 0.6 mm | 0.6 mm | 0.6 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 3.8 mm | 3.8 mm | 3.8 mm | 3.8 mm | 3.8 mm | 3.8 mm |
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