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NE521
High−Speed
Dual−Differential
Comparator/Sense Amp
Features
•
•
•
•
TTL-Compatible Strobes and Outputs
Large Common-Mode Input Voltage Range
Operates from Standard Supply Voltages
Pb−Free Packages are Available
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MARKING
DIAGRAMS
14
1
SOIC−14
D SUFFIX
CASE 751A
1
NE521G
AWLYWW
Applications
•
MOS Memory Sense Amp
•
A-to-D Conversion
•
High-Speed Line Receiver
MAXIMUM RATINGS
Rating
Supply Voltage
Positive
Negative
Differential Input Voltage
Input Voltage
Common Mode
Strobe/Gate
Maximum Power Dissipation (Note 1)
T
A
= 25°C (Still−Air)
N Package
D Package
Thermal Resistance, Junction−to−Ambient
N Package
D Package
Operating Temperature Range
Storage Temperature Range
Operating Junction Temperature
Lead Soldering Temperature (10 sec max)
Symbol
V+
V−
V
IDR
V
IN
Value
+7.0
−7.0
"6.0
"5.0
+5.25
Unit
V
14
1
PDIP−14
N SUFFIX
CASE 646
1
NE521N
AWLYYWWG
V
V
A
WL
Y, YY
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
P
D
1420
1040
R
qJA
100
145
0 to 70
−65
to +150
150
+230
mW
°C/W
PIN CONNECTIONS
D, N Packages
T
A
T
stg
T
J
T
sld
°C
°C
°C
°C
INPUT 1A
INPUT 1B
NC
OUTPUT 1Y
STROBE 1G
STROBE S
GROUND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V+
V−
INPUT 2A
INPUT 2B
NC
OUTPUT 2Y
STROBE 2G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Derate above 25°C at the following rates:
N package at 10 mW/°C
D package at 6.9 mW/°C.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
October, 2006
−
Rev. 4
1
Publication Order Number:
NE521/D
NE521
LOGIC FUNCTION TABLE
V
ID
(A
+
, B)
V
ID
v
−V
OS
−V
OS
< V
ID
< V
OS
V
ID
w
V
OS
X
X
Strobe S
H
H
H
L
X
Strobe G
H
H
H
X
L
Output (Y)
L
Undefined
H
H
H
INPUT 1A
INPUT 1B
(1)
(2)
(12)
INPUT 2A
(11)
INPUT 2B
(9)
(8)
OUTPUT 1Y
STROBE 1G
STROBE S
(4)
(5)
(6)
OUTPUT 3Y
STROBE 2G
Figure 1. Block Diagram
14
V+
R2
R1
R17
R20
R21
R25
Q4
−
D7
Q3
Q25
R16
D6
Q6
Q7
Q5
5
6
Q26
Q30
Q29
R24
4
2
1
Q2
Q1
+
Q9
R4
Q10
Q8
Q13
Q11
R14
D2
D1
R22
R23
Q27
Q28
13
V−
R8
Q16
Q18
R10
R5
R7
R3
R15
R6
7
R9
Q19
D3
R28
Q36
R29
Q35
Q15
Q14
D4
D5
Q22
Q23
Q24
R18
Q31
8
Q32
R30
Q34
Q32
Q17
12
11
+
−
9
Q20
Q21
R12
V+
R11
R19
R26
R27
R34
Figure 2. Equivalent Schematic
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2
NE521
DC ELECTRICAL CHARACTERISTICS
(V+ = +5.0 V; V− =
−5.0
V, T
A
= 0°C to +70°C, unless otherwise noted.)
Limits
Characteristic
Input Offset Voltage
At 25°C
Overtemperature Range
Input Bias Current
At 25°C
Overtemperature Range
Input Offset Current
At 25°C
Overtemperature Range
Common-Mode Voltage Range
Input Current
High
Test Conditions
V+ = +4.75 V; V− =
−4.75
V
Symbol
V
OS
Min
−
−
−
−
−
−
−3.0
Typ
6.0
−
7.5
−
1.0
−
−
Max
7.5
10
20
40
5.0
12
+3.0
Unit
mV
V+ = +5.25 V; V− =
−5.25
V
I
BIAS
mA
V+ = +5.25 V; V− =
−5.25
V
I
OS
mA
V+ = +4.75 V; V− =
−4.75
V
V+ = +5.25 V; V− =
−5.25
V
V
IH
= 2.7 V
1G or 2G Strobe
Common Strobe S
V
IL
= 0.5 V
1G or 2G Strobe
Common Strobe S
V
I(S)
= 2.0 V
V+ = +4.75 V; V− =
−4.75
V;
I
LOAD
=
−1.0
mA
V+ = +5.25 V; V− =
−5.25
V;
I
LOAD
= 20 mA
−
V+ = +5.25 V; V− =
−5.25
V;
T
A
= 25°C
−
V
CM
I
IH
V
mA
−
−
I
IL
−
−
2.7
−
−
−
−
3.4
50
100
−2.0
−4.0
mA
Input Current
Low
Output Voltage
High
Low
Supply Voltage
Positive
Negative
Supply Current
Positive
Negative
Short−Circuit Output Current
V
OH
V
OL
V
0.5
V
V+
V−
I
CC+
I
CC−
I
SC
4.75
−4.75
−
−
−40
5.0
−5.0
27
−15
−
5.25
−5.25
35
−28
−100
mA
mA
AC ELECTRICAL CHARACTERISTICS
(T
A
= 25°C; R
L
= 280
W;
C
L
= 15 pF, V+ = 5.0 V; V− = 5.0 V, guaranteed by characterization)
Limits
Characteristic
Large−Signal Switching Speed
Propagation Delay
Low to High (Note 2)
High to Low (Note 2)
Low to High (Note 3)
High to Low (Note 3)
Max. Operating Frequency
ns
Amp
Amp
Strobe
Strobe
−
Output
Output
Output
Output
−
t
PLH(D)
t
PHL(D)
t
PLH(S)
t
PHL(S)
f
MAX
−
−
−
−
40
9.6
8.2
4.8
3.9
55
12
9.0
10
6.0
−
MHz
From Input
To Output
Symbol
Min
Typ
Max
Unit
2. Response time measured from 0 V point of
"100
mV
P-P
10 MHz square wave to the 1.5 V point of the output.
3. Response time measured from 1.5 V point of input to 1.5 V point of the output.
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3
NE521
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
4
3
2
1
0
20mV
100mV
V
S
= +5V
T
A
= 25
o
C
4
3
2
1
0
50mV
100mV
5mV
10mV
T
A
= 25
o
C
V
S
= +5V
12
10
8
6
4
2
TPD (LH)
5mV
10mV
TESPONSE TIME (ns)
INPUT VOLTAGE (mV)
INPUT VOLTAGE (mV)
TPD (HL)
100
50
0
0
5
10
15
20
25
30
100
50
0
0
5
10
15
20
25
30
60
20
−20
+60
+100
+140
TIME — nS
TIME — nS
AMBIENT TEMPERATURE (
o
C)
Figure 3. Response Time for
Various Input Overdrives
20
V
S
= +5V
10MHz SQUARE
WAVE INPUT
T
A
= 25
o
C
TPD (LH)
18
PROPAGATION DELAY (ns)
16
14
12
10
8
6
4
2
10
20
30
40
50
60
70
100
Figure 4. Response Time for
Various Input Overdrives
4.0
V
S
= +5V
10MHz SQUARE
WAVE INPUT
T
A
= 25
o
C
Figure 5. Response Time
vs. Temperature
12
PROPAGATION DELAY (ns)
V
OH
OUTPUT VOLTAGE (V)
3.0
10
8
TPD (HL)
6
TPD (LH)
TPD (HL)
2.0
1.0
V
OL
1000
INPUT VOLTAGE (m Vp−p)
−75
−25
+25
+75
o
+125
INPUT VOLTAGE (mVp−p)
AMBIENT TEMPERATURE ( C)
Figure 6. Propagation Delay
for Various Input Voltages
12
11
INPT BIAS CURRENT (
μ
A)
10
9
8
7
6
Figure 7. Propagation Delay
for Various Input Voltages
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Figure 8. Output Voltage vs.
Ambient Temperature
INPUT OFSET CURRENT (
μ
A)
−75
−25
+25
+75
+125
−75
−25
+25
+75
+125
AMBIENT TEMPERATURE (
o
C)
AMBIENT TEMPERATURES (
o
C)
Figure 9. Input Bias Current
vs. Ambient Temperature
Figure 10. Input Offset
Current vs. Ambient
Temperature
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