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IDT70V05L55J: 产品描述Dual-Port SRAM, 8KX8, 55ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68; 产品类别存储存储; 文件大小237KB，共17页; 制造商IDT (Integrated Device Technology)

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IDT70V05L55J概述

Dual-Port SRAM, 8KX8, 55ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68

IDT70V05L55J规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	LCC
包装说明	0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68
针数	68
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	55 ns
其他特性	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
I/O 类型	COMMON
JESD-30 代码	S-PQCC-J68
JESD-609代码	e0
长度	24.2062 mm
内存密度	65536 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	8
湿度敏感等级	1
功能数量	1
端口数量	2
端子数量	68
字数	8192 words
字数代码	8000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	8KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	QCCJ
封装等效代码	LDCC68,1.0SQ
封装形状	SQUARE
封装形式	CHIP CARRIER
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	3.3 V
认证状态	Not Qualified
座面最大高度	4.572 mm
最大待机电流	0.005 A
最小待机电流	3 V
最大压摆率	0.155 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn85Pb15)
端子形式	J BEND
端子节距	1.27 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	24.2062 mm

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HIGH-SPEED 3.3V

8K x 8 DUAL-PORT

STATIC RAM

Integrated Device Technology, Inc.

IDT70V05S/L

FEATURES:

• True Dual-Ported memory cells which allow simulta-

neous access of the same memory location

• High-speed access

— Commercial: 25/35/55ns (max.)

• Low-power operation

— IDT70V05S

Active: 350mW (typ.)

Standby: 3.5mW (typ.)

— IDT70V05L

Active: 350mW (typ.)

Standby: 1mW (typ.)

• IDT70V05 easily expands data bus width to 16 bits or

more using the Master/Slave select when cascading

more than one device

• M/

= H for

BUSY

output flag on Master

= L for

BUSY

input on Slave

• Busy and Interrupt Flags

• On-chip port arbitration logic

• Full on-chip hardware support of semaphore signaling

between ports

• Fully asynchronous operation from either port

• Devices are capable of withstanding greater than 2001V

electrostatic discharge

• Battery backup operation—2V data retention

• LVTTL-compatible, single 3.3V (±0.3V) power supply

• Available in 68-pin PGA, 68-pin PLCC, and a 64-pin

TQFP

DESCRIPTION:

The IDT70V05 is a high-speed 8K x 8 Dual-Port Static

RAM. The IDT70V05 is designed to be used as a stand-alone

Dual-Port RAM or as a combination MASTER/SLAVE Dual-

Port RAM for 16-bit-or-more word systems. Using the IDT

MASTER/SLAVE Dual-Port RAM approach in 16-bit or wider

memory system applications results in full-speed, error-free

FUNCTIONAL BLOCK DIAGRAM

I/O

- I/O

I/O

Control

I/O

Control

I/O

-I/O

BUSY

(1,2)

BUSY

Address

Decoder

(1,2)

12L

MEMORY

ARRAY

Address

Decoder

12R

NOTES:

1. (MASTER):

BUSY

is output;

(SLAVE):

BUSY

is input.

2. BUSY outputs

and INT outputs

are non-tri-

stated push-pull.

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

SEM

(2)

SEM

INT

(2)

INT

2941 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

COMMERCIAL TEMPERATURE RANGE

For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.

OCTOBER 1996

6.35

DSC-2941/3

IDT70V05L55J相似产品对比

	IDT70V05L55J	IDT70V05S25G	IDT70V05L55PF	IDT70V05L35PF	IDT70V05S55G	IDT70V05L55G	IDT70V05S35J	IDT70V05L35J	IDT70V05L25G
描述	Dual-Port SRAM, 8KX8, 55ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68	Dual-Port SRAM, 8KX8, 25ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68	Dual-Port SRAM, 8KX8, 55ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	Dual-Port SRAM, 8KX8, 35ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	Dual-Port SRAM, 8KX8, 55ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68	Dual-Port SRAM, 8KX8, 55ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68	Dual-Port SRAM, 8KX8, 35ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68	Dual-Port SRAM, 8KX8, 35ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68	Dual-Port SRAM, 8KX8, 25ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	LCC	PGA	QFP	QFP	PGA	PGA	LCC	LCC	PGA
包装说明	0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68	1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68	14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	14 X 14 MM, 1.40 MM HEIGHT, TQFP-64	1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68	1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68	0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68	0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68	1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68
针数	68	68	64	64	68	68	68	68	68
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	55 ns	25 ns	55 ns	35 ns	55 ns	55 ns	35 ns	35 ns	25 ns
其他特性	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PQCC-J68	S-CPGA-P68	S-PQFP-G64	S-PQFP-G64	S-CPGA-P68	S-CPGA-P68	S-PQCC-J68	S-PQCC-J68	S-CPGA-P68
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	24.2062 mm	29.464 mm	14 mm	14 mm	29.464 mm	29.464 mm	24.2062 mm	24.2062 mm	29.464 mm
内存密度	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2	2
端子数量	68	68	64	64	68	68	68	68	68
字数	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
字数代码	8000	8000	8000	8000	8000	8000	8000	8000	8000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED
封装代码	QCCJ	PGA	LQFP	LQFP	PGA	PGA	QCCJ	QCCJ	PGA
封装等效代码	LDCC68,1.0SQ	PGA68,11X11	QFP64,.66SQ,32	QFP64,.66SQ,32	PGA68,11X11	PGA68,11X11	LDCC68,1.0SQ	LDCC68,1.0SQ	PGA68,11X11
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	CHIP CARRIER	GRID ARRAY	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY	CHIP CARRIER	CHIP CARRIER	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	240	240	225	225	225	225	225
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	4.572 mm	5.207 mm	1.6 mm	1.6 mm	5.207 mm	5.207 mm	4.572 mm	4.572 mm	5.207 mm
最大待机电流	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.0025 A
最小待机电流	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
最大压摆率	0.155 mA	0.19 mA	0.155 mA	0.155 mA	0.18 mA	0.155 mA	0.18 mA	0.155 mA	0.165 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	NO	YES	YES	NO	NO	YES	YES	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn/Pb)
端子形式	J BEND	PIN/PEG	GULL WING	GULL WING	PIN/PEG	PIN/PEG	J BEND	J BEND	PIN/PEG
端子节距	1.27 mm	2.54 mm	0.8 mm	0.8 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	2.54 mm
端子位置	QUAD	PERPENDICULAR	QUAD	QUAD	PERPENDICULAR	PERPENDICULAR	QUAD	QUAD	PERPENDICULAR
处于峰值回流温度下的最长时间	30	30	20	20	30	30	30	30	30
宽度	24.2062 mm	29.464 mm	14 mm	14 mm	29.464 mm	29.464 mm	24.2062 mm	24.2062 mm	29.464 mm
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)
湿度敏感等级	1	-	3	3	-	-	1	1	-
Base Number Matches	-	1	1	1	1	1	1	1	-

IDT70V05L55J

IDT70V05L55J概述

IDT70V05L55J规格参数

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