Philips Semiconductors
Product specification
Triacs
BT137F series
GENERAL DESCRIPTION
Passivated triacs in a full pack plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT137F-
BT137F-
BT137F-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500
500F
500G
500
8
55
600
600F
600G
600
8
55
800
800F
800G
800
8
55
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT186
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
hs
≤
73 ˚C
full sine wave; T
j
= 125 ˚C prior
to surge; with reapplied V
DRM(max)
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-600
600
1
8
55
60
15
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
June 1999
1
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT137F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
12
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.5
6.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
BT137F-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 10 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
;
T
j
= 125 ˚C
MIN.
TYP.
...
-
-
-
-
-
-
-
-
-
-
-
0.25
-
5
8
11
30
7
16
5
7
5
1.3
0.7
0.4
0.1
35
35
35
70
30
45
30
45
20
MAX.
...F
25
25
25
70
30
45
30
45
20
1.65
1.5
-
0.5
...G
50
50
50
100
45
60
45
60
40
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
June 1999
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT137F series
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of change of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
BT137F-
V
DM
= 67% V
DRM(max)
;
T
j
= 125 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 ˚C;
I
T(RMS)
= 8 A;
dI
com
/dt = 3.6 A/ms; gate
open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
...
100
MIN.
...F
50
...G
200
TYP.
250
MAX.
-
UNIT
V/µs
dV
com
/dt
-
-
10
20
-
V/µs
t
gt
-
-
-
2
-
µs
June 1999
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT137F series
12
10
Ptot / W
Ths(max) / C
71
= 180
120
1
10
IT(RMS) / A
BT137X
80
89
90
60
30
8
73 C
8
6
4
2
0
6
98
4
107
116
125
10
2
0
2
4
6
IT(RMS) / A
8
0
-50
0
50
Ths / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
IT
I TSM
time
Tj initial = 25 C max
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
IT(RMS) / A
1000
25
20
15
100
dI
T
/dt limit
10
T2- G+ quadrant
5
10
10us
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
T
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
hs
≤
73˚C.
VGT(Tj)
VGT(25 C)
80
70
60
50
40
30
1.6
1.4
1.2
1
0.8
Tj initial = 25 C max
20
10
0.6
0.4
-50
0
1
10
100
Number of cycles at 50Hz
1000
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
June 1999
4
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT137F series
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
25
IT / A
Tj = 125 C
Tj = 25 C
20
typ
Vo = 1.264 V
Rs = 0.0378 Ohms
max
15
10
1
5
0.5
0
-50
0
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
unidirectional
bidirectional
3
2.5
1
2
1.5
1
0.5
0
-50
0.01
10us
0.1ms
1ms
0.1
P
D
tp
t
0
50
Tj / C
100
150
10ms
tp / s
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
dV/dt (V/us)
off-state dV/dt limit
BT137...G SERIES
BT137 SERIES
1000
3
2.5
2
1.5
1
0.5
100
BT137...F SERIES
10
dIcom/dt =
10 A/ms
7.9
6.1
4.7
3.6
2.8
0
-50
0
50
Tj / C
100
150
1
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
June 1999
5
Rev 1.200
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