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Datasheet> 器件分类 > 无线/射频/通信> 射频和微波> CXE-1089Z
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CXE-1089Z

产品描述Wide Band Low Power Amplifier, 50MHz Min, 1200MHz Max, 1 Func, GAAS, SOT-89, 3 PIN
产品类别无线/射频/通信    射频和微波   
文件大小790KB，共12页
制造商Qorvo
官网地址https://www.qorvo.com
标准
下载文档 详细参数 选型对比 全文预览

CXE-1089Z概述

Wide Band Low Power Amplifier, 50MHz Min, 1200MHz Max, 1 Func, GAAS, SOT-89, 3 PIN

CXE-1089Z规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Qorvo
包装说明TO-243
Reach Compliance Codecompliant
其他特性LOW NOISE
特性阻抗75 Ω
构造COMPONENT
增益12.8 dB
最大输入功率 (CW)23 dBm
JESD-609代码e3
安装特点SURFACE MOUNT
功能数量1
端子数量3
最大工作频率1200 MHz
最小工作频率50 MHz
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码TO-243
电源5 V
射频/微波设备类型WIDE BAND LOW POWER
表面贴装YES
技术GAAS
端子面层Matte Tin (Sn)
最大电压驻波比10

CXE-1089Z文档预览

CXE-1089Z
50MHz to
1200MHz
75Ω pHEMT
MMIC LNA
CXE-1089Z
50MHz to 1200MHz 75Ω pHEMT MMIC LNA
Package: SOT-89
Product Description
RFMD’s CXE-1089Z is a high performance 75Ω pHEMT MMIC low-noise
amplifier utilizing a Darlington configuration with active bias. The active
bias network provides stable current over temperature and process
threshold voltage variations. The CXE-1089Z amplifier operates linearly
from +3.3V
DC
, +4.75V
DC
, or +5V
DC
power supplies.
Features
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Gain (dB)
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
0.0
Gain and Return Loss versus Frequency,
T=25°C
-5
-8
Flat Gain: 13dB+/-0.4dB,
50MHz to 1000MHz
Excellent Return Loss:
>15.5dB
Low Distortion: CTB=-82dBc,
CSO=-66dBc
Operates from Single, Fixed
+3.3V
DC
, +4.75V
DC
, or
+5V
DC
Supply
On-Chip Active Bias Network
CATV Set Top Box / Tuners
CATV Drop Amplifiers
Optical Rx/Tx
FTTH Video Solutions
S21
-11
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
S22
-17
-20
-23
-26
-29
Return Loss (dB)
-14
Applications
S11
-32
-35
200.0
400.0
600.0
800.0
1000.0
1200.0
Frequency (MHz)
Parameter
Small Signal Gain
Gain Flatness
Output Power at 1dB Compression
Output Third Order Intercept Point
CSO
CTB
XMOD
Min.
Specification
Typ.
13.0
+/-0.4
18.5
38.5
-66.0
-82.0
-78.0
Max.
Unit
dB
dB
dBm
dBm
dBc
dBc
dBc
Condition
500MHz
50MHz to 1000MHz
500MHz
500MHz
55.25MHz to 745.25MHz, 110Ch, Flat Tilt,
15dBmV Input
55.25MHz to 745.25MHz, 110Ch, Flat Tilt,
15dBmV Input
55.25MHz to 745.25MHz, 110Ch, Flat Tilt,
15dBmV Input
50MHz to 1000MHz
50MHz to 1000MHz
500MHz
Input Return Loss, Worst Case
16.5
dB
Output Return Loss, Worst Case
15.5
dB
Noise Figure
3.0
dB
Device Operating Voltage
5.00
5.25
V
Device Operating Current
110.0
mA
Quiescent
Thermal Resistance
57.5
°C/W
Junction-to-case
Test Conditions: V
D
=5V, I
D
=110mA Typ, OIP
3
Tone Spacing=1MHz, P
OUT
per tone=8dBm, T
L
=25°C, Z
S
=Z
L
=75Ω, Tested with App Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 12
CXE-1089Z
Parameter
Small Signal Gain
Gain Flatness
Output Power at 1dB Compression
Output Third Order Intercept Point
CSO
CTB
Input Return Loss, Worst Case
Output Return Loss, Worst Case
Noise Figure
Device Operating Voltage
Min.
Specification
Typ.
12.9
+/-0.4
17.2
37.8
-61
-79
16.4
17.5
2.9
4.75
Max.
Unit
dB
dB
dBm
dBm
dBc
dBc
dB
dB
dB
V
DC
Condition
500MHz
50MHz to 1000MHz
500MHz
500MHz
55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
50MHz to 1000MHz, -40°C to +85°C
50MHz to 1000MHz, -40°C to +85°C
500MHz
Quiescent
4.9
Device Operating Current
106
mA
Test Conditions: V
D
=+4.75V
DC
, I
D
=106mA, Typ. OIP3 Tone Spacing=1MHz, P
OUT
per tone=+8dBm
T=+25°C, Z
S
=Z
I
=75Ω, Tested with +5V
DC
Applications Circuit
Parameter
Small Signal Gain
Gain Flatness
Output Power at 1dB Compression
Output Third Order Intercept Point
CSO
CTB
Input Return Loss, Worst Case
Output Return Loss, Worst Case
Noise Figure
Device Operating Voltage
Min.
Specification
Typ.
12.7
+/-0.4
14.2
35.4
-56
-78
16.4
17.5
2.8
3.3
Max.
Unit
dB
dB
dBm
dBm
dBc
dBc
dB
dB
dB
V
DC
Condition
500MHz
50MHz to 1000MHz
500MHz
500MHz
55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt,
+15.5dBmV Input
50MHz to 1000MHz, -40°C to +85°C
50MHz to 1000MHz, -40°C to +85°C
500MHz
Quiescent
3.5
Device Operating Current
75
mA
Test Conditions: V
D
=+3.3V
DC
, I
D
=75mA, Typ. OIP3 Tone Spacing=1MHz, P
OUT
per tone=+8dBm
T=+25°C, Z
S
=Z
I
=75Ω, Tested with +5V
DC
Applications Circuit
Absolute Maximum Ratings
Parameter
Device Current (I
D
)
Device Voltage (V
D
)
Power Dissipation
RF Input Power* (See Note)
Junction Temperature (T
J
)
Operating Temperature Range (T
L
)
Storage Temperature Range
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level
*Note: Load condition, 10:1 VSWR
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
T
L
=T
LEAD
Rating
125
5.5
690
23
+150
-40 to +85
-65 to +150
Class 1A
MSL 2
Unit
mA
V
mW
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100917
CXE-1089Z
Parameters
Small Signal Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Output Second Order Intercept Point
Input Return Loss
Reverse Isolation
Output Return Loss
Noise Figure
Test Conditions: V
D
=5V I
D
=110mA Typ.
T
L
=25°C Z
S
=Z
L
=75Ω
Units
50
250
Frequency (MHz)
550
750
13.0
18.9
37.5
60.5
-38.5
-17.5
-16.5
2.5
850
12.8
19.1
37.5
55.5
-34.5
-17.5
-15.5
2.5
1050
12.8
19.5
37.5
54.5
-25.5
-17.5
-15.5
2.5
dB
13.5
13.2
13.1
dBm
16.6
17.2
18.6
dBm
37.5
38.5
38.5
dBm
63.5
64.5
62.5
dB
-17.5
-27.5
-33.5
dB
-17.5
-17.5
-17.5
dB
-17.5
-16.5
-16.5
dB
3.5
2.5
2.5
OIP
3
, OIP
2
Tone Spacing=1MHz, P
OUT
per tone=8dBm
Tested with App Circuit
Current versus Voltage (R
BIAS
=Open)
140.0
120.0
Device Current (mA)
100.0
80.0
60.0
40.0
20.0
0.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-40°C
+25°C
+85°C
Device Voltage (V)
DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 12
CXE-1089Z
Application Circuit Performance (V
D
=5V, I
D
=110mA, R
BIAS
=open)
S11 versus Frequency
0.0
18.0
S21 versus Frequency
-40°C
25°C
85°C
-5.0
16.0
-10.0
S11 (dB)
-15.0
S21 (dB)
14.0
12.0
-20.0
10.0
-25.0
-40°C
25°C
85°C
0.5
1.0
1.5
2.0
2.5
3.0
-30.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
8.0
0.0
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency
0.0
0.0
S22 versus Frequency
-40°C
25°C
85°C
-5.0
-5.0
-10.0
-10.0
S12 (dB)
-15.0
S22 (dB)
-40°C
25°C
85°C
0.5
1.0
1.5
2.0
2.5
3.0
-15.0
-20.0
-20.0
-25.0
-25.0
-30.0
0.0
-30.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Frequency (GHz)
4 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100917
CXE-1089Z
Application Circuit Performance (V
D
=5V, I
D
=110mA, R
BIAS
=open)
NF versus Frequency
5.0
4.5
20.0
4.0
3.5
3.0
2.5
14.0
2.0
1.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
22.0
P
1dB
versus Frequency
P
1dB
(dBm)
-40°C
25°C
85°C
NF (dB)
18.0
16.0
-40°C
25°C
85°C
12.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Frequency (GHz)
Frequency (GHz)
OIP
3
(8dBm/tone, 1MHz spacing)
44.0
80.0
75.0
OIP
2
(8dBm/tone, 1MHz spacing)
42.0
70.0
65.0
OIP
3
(dBm)
OIP
2
(dBm)
40.0
60.0
55.0
50.0
45.0
38.0
36.0
40.0
-40°C
25°C
85°C
34.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
35.0
30.0
0.0
0.2
0.4
0.6
0.8
1.0
-40°C
25°C
85°C
1.2
Frequency (GHz)
Frequency (GHz)
DS100917
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 12
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CXE-1089Z相似产品对比

CXE-1089Z CXE-1089ZSQ CXE-1089ZSR
描述 Wide Band Low Power Amplifier, 50MHz Min, 1200MHz Max, 1 Func, GAAS, SOT-89, 3 PIN Wide Band Low Power Amplifier, 50MHz Min, 1200MHz Max, 1 Func, GAAS, SOT-89, 3 PIN Wide Band Low Power Amplifier, 50MHz Min, 1200MHz Max, 1 Func, GAAS, SOT-89, 3 PIN
是否Rohs认证 符合 符合 符合
厂商名称 Qorvo Qorvo Qorvo
包装说明 TO-243 TO-243 TO-243
Reach Compliance Code compliant compliant compliant
其他特性 LOW NOISE LOW NOISE LOW NOISE
特性阻抗 75 Ω 75 Ω 75 Ω
构造 COMPONENT COMPONENT COMPONENT
增益 12.8 dB 12.8 dB 12.8 dB
最大输入功率 (CW) 23 dBm 23 dBm 23 dBm
安装特点 SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT
功能数量 1 1 1
端子数量 3 3 3
最大工作频率 1200 MHz 1200 MHz 1200 MHz
最小工作频率 50 MHz 50 MHz 50 MHz
最高工作温度 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装等效代码 TO-243 TO-243 TO-243
电源 5 V 5 V 5 V
射频/微波设备类型 WIDE BAND LOW POWER WIDE BAND LOW POWER WIDE BAND LOW POWER
表面贴装 YES YES YES
技术 GAAS GAAS GAAS
最大电压驻波比 10 10 10

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