Wide Band Low Power Amplifier, 0MHz Min, 3000MHz Max, 1 Func, BIPolar,
SGA-7489规格参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Qorvo
包装说明
TO-243
Reach Compliance Code
unknown
特性阻抗
50 Ω
构造
COMPONENT
增益
18.5 dB
最大输入功率 (CW)
16 dBm
JESD-609代码
e0
安装特点
SURFACE MOUNT
功能数量
1
端子数量
3
最大工作频率
3000 MHz
最小工作频率
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
TO-243
电源
5 V
射频/微波设备类型
WIDE BAND LOW POWER
最大压摆率
143 mA
表面贴装
YES
技术
BIPOLAR
端子面层
Tin/Lead (Sn/Pb)
最大电压驻波比
10
SGA-7489文档预览
Product Description
The SGA-7489 is a high performance SiGe HBT
MMIC Amplifier. A Darlington configuration featuring
1 micron emitters provides high FT and excellent
thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current
between junctions. Cancellation of emitter junction
non-linearities results in higher suppression of
intermodulation products. Only 2 DC-blocking ca-
pacitors, a bias resistor and an optional RF choke
are required for operation.
The matte tin finish on Sirenza’s lead-free package
utilizes a post annealing process to mitigate tin whis-
ker formation and is RoHS compliant per EU Direc-
tive 2002/95. This package is also manufactured
with green molding compounds that contain no an-
timony trioxide nor halogenated fire retardants.
Gain, Return Loss, and Isolation vs. Frequency
30
25
20
Gain (dB)
15
10
5
Isolation
Output
Return Loss
SGA-7489
SGA-7489Z
Pb
RoHS Compliant
&
Green
Package
DC-3000 MHz Silicon Germanium
HBT Cascadeable Gain Block
Product Features
•
Now available in Lead Free, RoHS
Compliant, & Green Packaging
•
DC-3000 MHz Operation
• Very High IF Output IP3: 39dBm at 100MHz
• High Output IP3: +35.5 dBm typ. at 850 MHz
• Low Noise Figure: 3.3 dB typ. at 1950 MHz
Return Loss & Isolation (dB)
V
D
=5.0V, I
D
=115mA (Typ), T
LEAD
=+25C
0
Gain
-5
Input Return
Loss
-10
-15
Applications
•
Oscillator Amplifiers
• PA for Low / Medium Power Applications
• IF/ RF Buffer Amplifier
• Drivers for CATV Amplifiers
• LO Driver Amplifier
Freq. (MHz)
850
1950
100
850
1950
1950 *
850
1950
Min.
18.5
Typ.
22.4
20.0
39.0
35.5
33.0
36.0 *
21.5
18.5
3000
1950
1950
1950
1950
4.7
103
10.3
9.0
15.0
11.0
23.0
3.3
5.0
115
82
4.3
5.3
127
o
-20
-25
0
0
500
1000
1500
2000
2500
-30
3000
Frequency (MHz)
Symbol
P
1dB
Parameter
Output Pow er at 1dB Compression
Max.
Units
dBm
OIP
3
Output Third Order Intercept Point
* Using 2 GHz App.Ckt. (see page 5)
31.0
20.0
17.0
dBm
S
21
Bandw idth
IRL
ORL
S
12
NF
V
D
I
D
R
TH
, j-l
Small Signal Gain
Determined by Return Loss (>9dB)
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure, Z
S
= 50 Ohms
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
23.0
20.0
dB
MHz
dB
dB
dB
dB
V
mA
C/W
Test Conditions:
V
S
= 8 V
I
D
= 115 mA Typ.
Bias Resistance = 26 Ohms
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
T
L
= 25ºC
Z
S
= Z
L
= 50 Ohms
NOTE: The recommended operating current in the preliminary datasheet was 130mA. Supplemental measurements have since shown
that an operating current of 115mA results in optimal RF performance over temperature. Continued operation at 130mA is reliable,
however, the recommended operating current has been changed to 115mA.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101801 Rev D
SGA-7489 DC-3000 MHz SiGe Amplifier
Preliminary
Typical RF Performance at Key Operating Frequencies
Frequency
Frequency (MHz)
Frequency (MHz)(MHz)
Symbol
Parameter
Unit
100
500
850
1950
2400
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
dB
dBm
dBm
dB
dB
dB
dB
23.0
39.0
22.8
13.5
19.5
26.0
2.7
22.5
36.5
22.6
14.5
17.0
25.5
2.7
21.5
35.5
22.4
15.5
14.5
25.0
2.8
18.5
33.0
*
20.0
15.0
11.0
23.0
3.3
17.0
32.2
19.0
13.5
10.5
22.0
Test Conditions:
V
S
= 8 V
I
D
= 115 mA Typ.
Bias Resistance = 26 Ohms
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
T
L
= 25ºC
Z
S
= Z
L
= 50 Ohms
* NOTE: An OIP3 of +36dBm at 1950 MHz is achieved using the tuned circuit shown on page 5.
Absolute Maximum Ratings
Noise Figure vs. Frequency over Temperature
V
D
=5.0V, I
D
=115 mA (Typ.) at T
LEAD
=+25°C
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Power
: Z
L
= 50 Ohms
Max.
RF Input Power :
Load VSWR=10:1*
Max.
Junction Temp
. (T
J
)
Absolute Limit
1
70
mA
5.0
4.5
4.0
7V
+16 dBm
+2 dBm
+150°C
-40°C to +85°C
+150°C
NF (dB)
3.5
3.0
2.5
2.0
1.5
1.0
0
500
1000
1500
2000
Operating Temp
. Range (T
L
)
Max.
Storage Temp
.
-40C
+25C
+85C
T
LEAD
O p e r a t io n o f t his d e vic e b e y o nd a ny o ne o f t he s e limit s ma y c a us e
permanent damage. For reliable continous operation, the device voltage
must not exceed 5.3V and the device current must not exceed 143mA.
Bias Conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
*Note: Take into account out of band load VSWR presented by devices
such as SAW filters to determine maximum RF input power. Reflected
harmonic levels in saturation are significant.
Frequency (MHz)
OIP
3
vs. Frequency over Temperature
V
D
=5.0V, I
D
=115 mA (Typ.) at T
LEAD
=+25°C
P
1dB
vs. Frequency over Temperature
V
D
=5.0V, I
D
=115 mA (Typ.) at T
LEAD
=+25°C
40.0
38.0
36.0
26.0
24.0
22.0
OIP
3
(dBm)
34.0
32.0
30.0
28.0
26.0
0
500
1000
1500
P
1dB
(dBm)
-40C
+25C
+85C
+25C Tuned Circuit
20.0
18.0
16.0
-40C
T
LEAD
14.0
12.0
T
LEAD
0
500
1000
1500
2000
+25C
+85C
2000
2500
2500
Frequency (MHz)
Frequency (MHz)
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101801 Rev D
SGA-7489 DC-3000 MHz SiGe Amplifier
Preliminary
Typical RF Performance Over Temperature
(Bias: V
S
= 8.0 V, Bias Resistance=26 Ohms, I
D
= 115 mA )
|
S
21
|
vs. Frequency
30
0
-5
24
-10
|S
21
| (dB)
18
|S
11
| (dB)
-15
-20
12
|
S
11
|
vs. Frequency
T
L
6
0
500
1000
1500
2000
Frequency (MHz)
+25°C
-40°C
+85°C
-25
-30
T
L
0
500
1000
1500
2000
Frequency (MHz)
+25°C
-40°C
+85°C
2500
3000
2500
3000
|
S
12
|
vs. Frequency
-10
0
-5
-15
-10
|S
12
| (dB)
|S
22
| (dB)
-20
-15
-20
-25
|
S
22
|
vs. Frequency
T
L
-30
0
500
1000
1500
2000
Frequency (MHz)
+25°C
-40°C
+85°C
-25
-30
3000
0
500
T
L
1000
1500
2000
Frequency (MHz)
+25°C
-40°C
+85°C
2500
2500
3000
NOTE: Full S-parameter data available at
www.sirenza.com
I
D
vs. V
D
Variation over Temperature
V
SUPPLY
= 8 V, Bias Resistance = 26 Ohms
150
140
130
120
+25°C
Plot of V
D
vs. Temp. @ I
D
=115 mA
5.3
5.2
V
D
(Volts)
+85°C
5.1
5.0
4.9
I
D
(mA)
110
100
90
80
4.70
-40°C
4.8
4.7
-40
4.80
4.90
5.00
V
D
(Volts)
5.10
5.20
5.30
-15
10
35
60
85
Temperature (°C)
303 Technology Court, Broomfield, CO. 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101801 Rev D
SGA-7489 DC-3000 MHz SiGe Amplifier
Preliminary
Basic Application Circuit
R
BIAS
1 uF
1000
pF
V
S
I
D
C
D
R
LDC
L
C
Application Circuit Element Values
Frequency (Mhz)
Reference
Designator
100
500
850
1950
2400
Bias
Inductor
C
B
C
D
L
C
1000 pF
100 pF
470 nH
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
RF in
C
B
4
1
SGA-7489
3
2
V
D
RF out
C
B
Required Bias Resistance for I
D
=115mA
Bias Resistance = R
BIAS
+ R
LDC
= ( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
Bias Resistance
7V
17
8V
26
9V
35
12 V
61
V
S
R
BIAS
Gnd.
1 uF
1000 pF
Bias resistor improves current stability over temperature.
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurement
for this data sheet were made on a 31 mil thick FR-4
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