Data Sheet No. 2N5153L
Type 2N5153L
Geometry
9702
Polarity PNP
Qual Level: JAN - JANS
Features:
•
•
•
•
Silicon power transistor for use in
high speed switching applications.
Housed in a
TO-5
case.
Also available in chip form using
the
9702
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/545
which
Semicoa meets in all cases.
Generic Part Number:
2N5153L
REF: MIL-PRF-19500/545
TO-5
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Collector Current, P
W
< 8.3 ms, < 1% duty cycle
Reverse Pulse Energy
Power Disipation T
A
= 25
o
C ambient
o
Derate above 25 C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
C
Rating
80
100
5.5
2
10
15
Unit
V
V
V
A
A
mJ
Watt
o
mW/ C
o
P
T
T
J
T
STG
1.0
5.7
-65 to +200
-65 to +200
C
C
o
Data Sheet No. 2N5153L
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 100 mA, I
B
= 0, pulsed
Base-Emitter Cutoff Current
V
EB
= 4 V, I
C
= 0
V
EB
= 5.5 V, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60 V, V
BE
= 0
V
CE
= 100 V, V
BE
= 0
V
CE
= 40 V, I
B
= 0
V
CE
= 60 V, V
BE
= +2 V, T
C
= 150 C
o
Symbol
V
(BR)CBO
I
EBO1
I
EBO2
I
CES1
I
CES2
I
CEO
I
CEX
Min
80
---
---
---
---
---
---
Max
---
1.0
1.0
1.0
1.0
50
500
Unit
V
µA
mA
µA
mA
µA
µA
ON Characteristics
Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5 V
I
C
= 2.5 A, V
CE
= 5 V, pulsed
I
C
= 5.0 A, V
CE
= 5 V, pulsed
I
C
= 2.55 A, V
CE
= 5 V pulsed, T
C
= -55
o
C
Base-Emitter Voltage, Nonsaturted
V
CE
= 5 V, I
C
= 2.5 A, pulsed
Base-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA, pulsed
I
C
= 5 A, I
B
= 500 mA, pulsed
Collector-Emitter Saturation Voltage
I
C
= 2.5 A, I
B
= 250 mA, pulsed
I
C
= 5 A, I
B
= 500 mA, pulsed
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BE
V
BE(sat)1
V
BE(sat)2
V
CE(sat)1
V
CE(sat)2
Min
50
70
40
25
---
---
---
---
---
Max
---
200
---
---
1.45
1.45
2.2
0.75
1.5
Unit
---
---
---
---
V dc
V dc
V dc
V dc
V dc
Small Signal Characteristics
Magnitude of Common Emitter Small Signal
Short Circuit Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 500 mA, f = 10 MHz
Common Emitter, Small Signal Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 100 mA, f = 1 kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Symbol
|h
fe
|
Min
7.0
Max
---
Unit
---
h
fe
C
OBO
50
---
---
250
---
pF
Switching Time
Delay Time
I
C
= 5 A, I
B1
= 500 mA
Storage Time
I
B2
= -500 mA
Fall Time
V
BE(off)
= 3.7 V
Turn-Off Time
R
L
= 6 ohms
Symbol
t
ON
t
s
t
f
t
OFF
Min
---
---
---
---
Max
0.5
1.4
0.5
1.5
Unit
µs
µs
µs
µs
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