PD - 95483C
Features
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IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 60V
R
DS(on)
= 8.5mΩ
G
S
Description
I
D
= 75A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
TO-220AB
IRF1010EZPbF
D
2
Pak
TO-262
IRF1010EZSPbF IRF1010EZLPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
84
60
75
340
140
0.90
± 20
99
180
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/°C
V
mJ
A
mJ
°C
c
i
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
j
HEXFET
®
is a registered trademark of International Rectifier.
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1
07/06/10
IRF1010EZ/S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
60
–––
–––
2.0
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.058 –––
6.8
8.5
–––
4.0
–––
–––
–––
20
–––
250
–––
200
––– -200
58
86
19
28
21
32
19
–––
90
–––
38
–––
54
–––
4.5
–––
7.5
2810
420
200
1440
320
510
–––
–––
–––
–––
–––
–––
–––
pF
V
V/°C
mΩ
V
S
µA
nA
nC
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 51A
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 25V, I
D
= 51A
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 51A
V
DS
= 48V
V
GS
= 10V
V
DD
= 30V
I
D
= 51A
R
G
= 7.95Ω
V
GS
= 10V
D
Between lead,
f
ns
f
f
nH
6mm (0.25in.)
from package
G
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 48V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
41
54
84
A
340
1.3
62
81
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 51A, V
GS
= 0V
T
J
= 25°C, I
F
= 51A, V
DD
= 30V
di/dt = 100A/µs
f
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.077mH,
R
G
= 25Ω, I
AS
= 51A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
≤
51A, di/dt
≤
260A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
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IRF1010EZ/S/LPbF
10000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
BOTTOM
100
BOTTOM
100
10
4.5V
10
1
4.5V
0.1
0.1
1
20µs PULSE WIDTH
Tj = 25°C
1
20µs PULSE WIDTH
Tj = 175°C
0.1
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
100
Gfs, Forward Transconductance (S)
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
T J = 175°C
T J = 25°C
ID, Drain-to-Source Current
(Α)
100
T J = 175°C
10
1
T J = 25°C
VDS = 25V
≤60µs
PULSE WIDTH
0.1
4
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRF1010EZ/S/LPbF
100000
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
12.0
ID= 51A
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 48V
VDS= 30V
VDS= 12V
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10
100.00
10.00
T J = 175°C
1.00
T J = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
1
0.10
VGS = 0V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
0.1
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF1010EZ/S/LPbF
100
90
80
ID, Drain Current (A)
2.5
Limited By Package
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 84A
VGS = 10V
2.0
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.1
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.10
0.05
0.02
0.01
τ
J
τ
1
τ
2
Ri (°C/W)
τi
(sec)
0.415
0.000246
0.410
0.000898
0.285
0.009546
0.01
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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