电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CNL635

产品描述SILICON PLANAR EPITAXIAL TRANSISTORS
文件大小344KB,共5页
制造商CDIL
官网地址http://www.cdilsemi.com
下载文档 选型对比 全文预览

CNL635概述

SILICON PLANAR EPITAXIAL TRANSISTORS

文档预览

下载PDF文档
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
CNL635
CNL637
CNL639
NPN
TO-92
Plastic Package
CPL636
CPL638
CPL640
PNP
C
BE
Suitable for Driver Stage of Audio Amplifier
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC Unless Otherwise Specified)
CNL635
DESCRIPTION
SYMBOL
CPL636
V
CEO
Collector Emitter Voltage
45
V
CBO
Collector Base Voltage
45
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current Continuous
Base Current Peak
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
a
=25ºC
Power Dissipation @ T
c
=25ºC
Operating And Storage Junction
Temperature Range
V
EBO
I
C
I
CM
I
B
I
BM
P
D
*P
D
P
D
T
j
, T
stg
CNL637
CPL638
60
60
5
1
1.5
100
200
0.8
1.0
2.0
-55 to +150
CNL639
CPL640
80
100
UNIT
V
V
V
A
A
mA
mA
W
W
W
ºC
*Transistors mounted on printed circuit board. Lead Length 4mm, mounting pad for collector lead min
10mm x 10 mm, copper
ELECTRICAL CHARACTERISTICS (T
a
=25ºC Unless Otherwise Specified)
TEST CONDITION
DESCRIPTION
SYMBOL
I
C
=1mA, I
B
=0
V
CEO
Collector Emitter Voltage
CNL635, CPL636
CNL637, CPL638
CNL639, CPL640
I
C
=100µA, I
E
=0
V
CBO
Collector Base Voltage
CNL635, CPL636
CNL637, CPL638
CNL639, CPL640
I
E
=10µA, I
C
=0
V
EBO
Emitter Base Voltage
V
CB
=30V, I
E
= 0
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
= 0, T
a
=125
o
C
V
CE
=2V, I
C
= 500mA
*V
BE (on)
Base Emitter On Voltage
Collector Emitter Saturation Voltage
*V
CE(sat)
I
C
=500mA, I
B
=50mA
VALUE
>45
>60
>80
>45
>60
>100
>5
<100
<10
<1
<0.5
UNIT
V
V
V
nA
µA
V
V
CNL635_40 Rev_1 020505D
Continental Device India Limited
Data Sheet
Page 1 of 5

CNL635相似产品对比

CNL635 CNL639 CPL636 CNL637 CPL638 CPL640
描述 SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS SILICON PLANAR EPITAXIAL TRANSISTORS

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2411  2517  1220  2123  22  47  5  58  34  57 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved