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IDT6168LA25LBG: 产品描述Standard SRAM, 4KX4, 25ns, CMOS, CQCC20, LCC-20; 产品类别存储存储; 文件大小472KB，共9页; 制造商IDT (Integrated Device Technology); 标准

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IDT6168LA25LBG概述

Standard SRAM, 4KX4, 25ns, CMOS, CQCC20, LCC-20

IDT6168LA25LBG规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	QLCC
包装说明	LCC-20
针数	20
Reach Compliance Code	compliant
ECCN代码	3A001.A.2.C
最长访问时间	25 ns
JESD-30 代码	R-CQCC-N20
JESD-609代码	e3
长度	10.8585 mm
内存密度	16384 bit
内存集成电路类型	STANDARD SRAM
内存宽度	4
功能数量	1
端口数量	1
端子数量	20
字数	4096 words
字数代码	4000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	4KX4
输出特性	3-STATE
可输出	NO
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	QCCN
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
筛选级别	MIL-STD-883 Class B
座面最大高度	1.905 mm
最小待机电流	2 V
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	MILITARY
端子面层	MATTE TIN
端子形式	NO LEAD
端子节距	1.27 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	7.366 mm

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CMOS Static RAM

16K (4K x 4-Bit)

Features

High-speed (equal access and cycle time)

– Military: 25/45ns (max.)

– Industrial: 25ns (max.)

– Commercial: 15/20/25ns (max.)

Low power consumption

Battery backup operation—2V data retention voltage

(IDT6168LA only)

Available in high-density 20-pin ceramic or plastic DIP and

20-pin leadless chip carrier (LCC)

Produced with advanced CMOS high-performance

technology

CMOS process virtually eliminates alpha particle

soft-error rates

Bidirectional data input and output

Military product compliant to MIL-STD-883, Class B

IDT6168SA

IDT6168LA

◆

Description

The IDT6168 is a 16,384-bit high-speed static RAM organized

as 4K x 4. It is fabricated using lDT’s high-performance, high-reliability

CMOS technology. This state-of-the-art technology, combined with inno-

vative circuit design techniques, provides a cost-effective approach for

high-speed memory applications.

Access times as fast 15ns are available. The circuit also offers a

reduced power standby mode. When

goes HIGH, the circuit will

automatically go to, and remain in, a standby mode as long as

remains

HIGH. This capability provides significant system-level power and cooling

savings. The low-power (LA) version also offers a battery backup data

retention capability where the circuit typically consumes only 1µW

operating off a 2V battery. All inputs and outputs of the IDT6168 are

TTL-compatible and operate from a single 5V supply.

The IDT6168 is packaged in either a space saving 20-pin, 300-mil

ceramic or plastic DIP or a 20-pin LCC providing high board-level

packing densities.

Military grade product is manufactured in compliance with the

latest revision of MIL-STD-883, Class B, making it ideally suited to

military temperature applications demanding the highest level of

performance and reliability.

Functional Block Diagram

GND

ADDRESS

DECODER

16,384-BIT

MEMORY ARRAY

I/O

I/O CONTROL

INPUT

DATA

CONTROL

3090 drw 01

FEBRUARY 2001

DSC-3090/05

IDT6168LA25LBG相似产品对比

	IDT6168LA25LBG	IDT6168SA45LGB	IDT6168LA20PG	IDT6168LA45LGB	IDT6168SA15PG	IDT6168SA20PG	IDT6168SA25PG	IDT6168LA25PG
描述	Standard SRAM, 4KX4, 25ns, CMOS, CQCC20, LCC-20	Standard SRAM, 4KX4, 45ns, CMOS, CQCC20, LCC-20	Standard SRAM, 4KX4, 20ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20	Standard SRAM, 4KX4, 45ns, CMOS, CQCC20, LCC-20	Standard SRAM, 4KX4, 15ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20	Standard SRAM, 4KX4, 20ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20	Standard SRAM, 4KX4, 25ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20	Standard SRAM, 4KX4, 25ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
零件包装代码	QLCC	QLCC	DIP	QLCC	DIP	DIP	DIP	DIP
包装说明	LCC-20	QCCN,	0.300 INCH, PLASTIC, DIP-20	QCCN,	0.300 INCH, PLASTIC, DIP-20	0.300 INCH, PLASTIC, DIP-20	0.300 INCH, PLASTIC, DIP-20	0.300 INCH, PLASTIC, DIP-20
针数	20	20	20	20	20	20	20	20
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A001.A.2.C	3A001.A.2.C	EAR99	3A001.A.2.C	EAR99	EAR99	EAR99	EAR99
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
最长访问时间	25 ns	45 ns	20 ns	-	15 ns	20 ns	25 ns	25 ns
JESD-30 代码	R-CQCC-N20	R-CQCC-N20	R-PDIP-T20	-	R-PDIP-T20	R-PDIP-T20	R-PDIP-T20	R-PDIP-T20
JESD-609代码	e3	e3	e3	-	e3	e3	e3	e3
长度	10.8585 mm	10.8585 mm	26.162 mm	-	26.162 mm	26.162 mm	26.162 mm	26.162 mm
内存密度	16384 bit	16384 bit	16384 bit	-	16384 bit	16384 bit	16384 bit	16384 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	4	4	4	-	4	4	4	4
功能数量	1	1	1	-	1	1	1	1
端口数量	1	1	1	-	1	1	1	1
端子数量	20	20	20	-	20	20	20	20
字数	4096 words	4096 words	4096 words	-	4096 words	4096 words	4096 words	4096 words
字数代码	4000	4000	4000	-	4000	4000	4000	4000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	125 °C	70 °C	-	70 °C	70 °C	70 °C	70 °C
组织	4KX4	4KX4	4KX4	-	4KX4	4KX4	4KX4	4KX4
输出特性	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE
可输出	NO	NO	NO	-	NO	NO	NO	NO
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	QCCN	QCCN	DIP	-	DIP	DIP	DIP	DIP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	IN-LINE	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	-	260	260	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.905 mm	1.905 mm	4.191 mm	-	4.191 mm	4.191 mm	4.191 mm	4.191 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	-	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	-	5 V	5 V	5 V	5 V
表面贴装	YES	YES	NO	-	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	MILITARY	COMMERCIAL	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	-	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	NO LEAD	NO LEAD	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子节距	1.27 mm	1.27 mm	2.54 mm	-	2.54 mm	2.54 mm	2.54 mm	2.54 mm
端子位置	QUAD	QUAD	DUAL	-	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	30	30	30	-	30	30	30	30
宽度	7.366 mm	7.366 mm	7.62 mm	-	7.62 mm	7.62 mm	7.62 mm	7.62 mm

IDT6168LA25LBG

IDT6168LA25LBG概述

IDT6168LA25LBG规格参数

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IDT6168LA25LBG相似产品对比

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