UMX18N
Elektronische Bauelemente
Plastic-Encapsulated
General Purpose Transistors (dual transistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Two chips in a package.
Mounting possible with SOT-363 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.
F
SOT-363
A
E
L
B
1
C
K
H
J
DG
MARKING
X18
6
C
5
B
4
E
REF.
A
B
C
D
E
F
1 2
E B
3
C
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
NPN ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
15
12
6
0.5
0.15
150, -55 ~ 150
Unit
V
V
V
A
W
°C
NPN ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
OB
Min.
15
12
6
-
Typ.
-
-
-
-
Max.
-
-
-
100
100
Unit
V
V
V
nA
nA
Test Conditions
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=15V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=10mA
270
-
-
-
-
-
320
7.5
680
0.25
-
-
V
MHz
pF
I
C
=200mA, I
B
=10mA
V
CE
=2V, I
E
=-10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-July-2009 Rev. A
Page 1 of 2
UMX18N
Elektronische Bauelemente
Plastic-Encapsulated
General Purpose Transistors (dual transistors)
TYPICAL CHARACTERISTICS
UMX18N
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-July-2009 Rev. A
Page 2 of 2
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