SMG2370N
Elektronische Bauelemente
1.8 A, 100 V, R
DS(ON)
280 m
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low R
DS(on)
and to
ensure minimal power loss and heat dissipation. Typical
applications are DC-DC converters and power management
in portable and battery-powered products such as computers,
printer , PCMCIA cards, cellular and cordless telephones.
A
3
SC-59
L
3
Top View
1
2
C B
1
2
K
E
D
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe SC-59
saves board Space.
Fast switching speed.
High performance trench technology.
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
Tj, Tstg
Ratings
100
±20
1.8
±10
1.1
1.3
-55 ~ 150
Unit
V
V
A
A
A
W
°C
I
D
@ T
A
=25°C
P
D
@ T
A
=25°C
Thermal Resistance Ratings
Parameter
Maximum Junction to Ambient
1
Notes
1
2
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
Symbol
t
≦
10 sec
Steady State
Typ
93
130
Max
110
150
Unit
°C
/ W
R
JA
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
Page 1 of 2
SMG2370N
Elektronische Bauelemente
1.8 A, 100 V, R
DS(ON)
280 m
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ. Max.
Unit
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
1.0
-
-
Zero Gate Voltage Drain Current
I
DSS
-
On-State Drain Current
1
I
D(on)
10
-
Drain-Source On-Resistance
1
-
-
-
-
-
-
-
11.3
0.75
-
±100
1
V
nA
V
DS
=V
GS
, I
D
= 250uA
V
DS
= 0V, V
GS
= ±8V
V
DS
= 80V, V
GS
= 0V
A
10
-
280
mΩ
-
355
-
-
S
V
V
GS
= 5.5V, I
D
= 1.6A
V
DS
= 10V, I
D
= 1.8A
I
S
= 1.6A, V
GS
= 0V
A
V
DS
= 80V, V
GS
= 0V, T
J
= 55°C
V
DS
= 5V, V
GS
= 10V
V
GS
= 10V, I
D
= 1.8A
R
DS(ON)
Forward Transconductance
1
Diode Forward Voltage
g
fs
V
SD
-
-
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Notes
1
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
7.0
1.1
2.0
8
24
35
10
-
-
-
-
-
nS
-
-
V
DD
= 10V, V
GEN
= 4.5V,
R
L
= 15, I
D
= 1A
nC
V
DS
= 10V, V
GS
= 5.5V,
I
D
= 1.8A
2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A
Page 2 of 2
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