TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
August 2008
TIP145T/146T/147T
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : h
FE
= 1000@ V
CE
= - 4V, I
C
= - 5A (Min.)
• Industrial Use
• Complement to TIP140T/141T/142T
Equivalent Circuit
C
B
1
TO-220
1.Base
2.Collector
3.Emitter
R1
R2
E
R1
≅
8kΩ
R2
≅
0.12kΩ
Absolute Maximum Ratings *
Symbol
BV
CBO
T
C
=25°C unless otherwise noted
Parameter
Collector-Base Voltage
: TIP145T
: TIP146T
: TIP147T
Value
- 60
- 80
- 100
- 60
- 80
- 100
-5
- 10
- 15
- 0.5
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
BV
CEO
Collector-Emitter Voltage : TIP145T
: TIP146T
: TIP147T
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Junction Temperature Range
BV
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
© 2008 Fairchild Semiconductor Corporation
TIP145T/146T/147T Rev. C
1
www.fairchildsemi.com
TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
Electrical Characteristics *
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP145T
: TIP146T
: TIP147T
Collector Cut-off Current
: TIP145T
: TIP146T
: TIP147T
Conditions
I
C
= - 30mA, I
B
= 0
Min.
- 60
- 80
- 100
Typ.
Max
Units
V
V
V
I
CEO
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 5A
V
CE
= - 4V, I
C
= - 10A
I
C
= - 5A, I
B
= - 10mA
I
C
= - 10A, I
B
= - 40mA
I
C
= - 10A, I
B
= - 40mA
V
CE
= - 4V, I
C
= - 10A
V
CC
= - 30V, I
C
= - 5A
I
B1
= -20mA, I
B2
= 20mA
R
L
= 6Ω
0.15
0.55
2.5
2.5
1000
500
-2
-2
-2
-1
-1
-1
-2
mA
mA
mA
mA
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP145T
: TIP146T
: TIP147T
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
t
d
t
r
t
stg
t
f
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
-2
-3
- 3.5
-3
V
V
V
V
µs
µs
µs
µs
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
TIP145T/146T/147T Rev. C
2
www.fairchildsemi.com
TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
Typical Characteristics
-10
-9
100000
V
CE
= -4V
I
C
[A], COLLECTOR CURRENT
-8
-7
-6
-5
-4
-3
-2
-1
-0
-0
-1
I
B
= -2000
µ
A
h
FE
, DC CURRENT GAIN
-5
I
B
= -1800
µ
A
I
B
= -1600
µ
A
I
B
= -1400
µ
A
I
B
= -1200
µ
A
10000
I
B
= -1000
µ
A
I
B
= -800
µ
A
I
B
= -600
µ
A
1000
I
B
= -400
µ
A
-2
-3
-4
100
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-1000
I
C
=-500I
B
f=0.1MHz
-1
V
CE
(sat)
C
ob
[pF], CAPACITANCE
V
BE
(sat)
-100
-0.1
-0.01
-0.1
-10
-1
-10
-100
-1
-10
-100
-1000
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
-100
120
100
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-10
DC
80
60
-1
TIP145T
TIP146T
TIP147T
40
20
-0.1
-1
-10
-100
-1000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2008 Fairchild Semiconductor Corporation
TIP145T/146T/147T Rev. C
3
www.fairchildsemi.com
TIP145T/146T/147T — PNP Epitaxial Silicon Darlington Transistor
Mechanical Dimensions
TO220
© 2008 Fairchild Semiconductor Corporation
TIP145T/146T/147T Rev. C
4
www.fairchildsemi.com
TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor
© 2008 Fairchild Semiconductor Corporation
TIP145T/146T/147T Rev. C
www.fairchildsemi.com
5
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