Si4447DY
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 40
R
DS(on)
(Ω)
0.054 at V
GS
= - 10 V
0.072 at V
GS
= - 4.5 V
I
D
(A)
- 4.5
- 3.9
Q
g
(Typ.)
9
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
•
100 % UIS Tested
APPLICATIONS
• CCFL Inverter
SO-8
S
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
G
D
Ordering Information:
Si4447DY-T1-E3 (Lead (Pb)-free)
Si4447DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
2
1.3
- 55 to 150
- 1.7
16
13
1.1
0.7
mJ
W
°C
- 4.5
- 3.6
- 30
- 0.9
10 s
Steady State
- 40
± 16
- 3.3
- 2.7
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
50
85
30
Maximum
62.5
110
40
Unit
°C/W
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
1
Si4447DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate-Source Threshold Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward
Voltage
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
GS(th)
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
V
DD
= - 15 V, R
L
= 15
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 6
Ω
f = 1 MHz
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 4.5 A
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= V
GS
, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= - 40 V, V
GS
= 0 V
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 4.5 A
V
GS
= - 15 V, I
D
= - 4.5 A
V
DS
= - 15 V, I
D
= - 4.5 A
I
S
= - 1.7 A, V
GS
= 0 V
- 20
0.045
0.059
13
- 0.79
805
120
85
9
2
3.6
11.5
8
12
74
38
27
17
18
13
18
110
60
45
26
nC
ns
Ω
14
nC
pF
- 1.2
0.054
0.072
- 0.8
- 40
3.4
± 100
-1
- 10
- 2.2
V
mV/°C
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 10 V thru 4 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
T
C
= - 55 °C
25 °C
12
3V
8
12
125 °C
8
4
4
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
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2
Transfer Characteristics
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
Si4447DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.10
1240
1116
R
DS(on)
- On-Resistance (Ω)
0.08
V
GS
= 4.5
V
0.06
V
GS
= 10
V
0.04
C - Capacitance (pF)
992
868
744
620
496
372
248
124
C
rss
0.00
0
4
8
12
16
20
0
0
5
10
15
20
25
30
35
40
C
oss
C
iss
0.02
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
6
I
D
= 4.5 A
V
GS
- Gate-to-Source
Voltage
(V)
5
R
DS(on)
- On-Resistance
(Normalized)
1.6
1.8
V
GS
= 10
V
I
D
= 4.5 A
Capacitance
4
V
DS
= 10
V
3
V
DS
= 20
V
1.4
1.2
2
1.0
1
0.8
0
0
2
4
6
8
10
12
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
20
0.30
On-Resistance vs. Junction Temperature
I
D
= 4.5 A
0.25
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
10
0.20
0.15
0.10
T
A
= 125 °C
0.05
T
A
= 25 °C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
3
Si4447DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.6
50
0.4
V
GS(th)
Variance
(V)
I
D
= 250
µA
40
0.2
Power (W)
30
0.0
20
- 0.2
10
- 0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited
by
R
DS(on)
*
I
DM
Limited
10
I
D
- Drain Current (A)
1 ms
1
I
D(on)
Limited
0.1
T
A
= 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
0.01
0.1
BV
DSS
Limited
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (s)
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 65 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
Si4447DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square
Wave
Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?73662.
Document Number: 73662
S09-0322-Rev. B, 02-Mar-09
www.vishay.com
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