MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1002MA/D
Microwave Pulse
Power Transistors
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
•
Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 2.0 Watts Peak
Minimum Gain = 10 dB
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Industry Standard Package
•
Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Internal Input Matching for Broadband Operation
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
R
θJC
Value
20
50
3.5
250
7.0
40
– 65 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
MRF1002MA
MRF1002MB
2.0 W (PEAK), 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
MRF1002MA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Max
25
Unit
°C/W
CASE 332A–03, STYLE 1
MRF1002MB
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
20
50
50
3.5
—
—
—
—
—
—
—
—
—
—
0.5
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE
10
—
100
—
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF1002MA MRF1002MB
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 35 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
2.5
5.0
pF
FUNCTIONAL TESTS
(Pulse Width = 10
µs,
Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz)
Collector Efficiency
(VCC = 35 Vdc, Pout = 2.0 W pk, f = 1090 MHz)
Load Mismatch
(VCC = 35 Vdc, Pout = 2.0 W, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
GPB
η
ψ
No Degradation in Power Output
10
40
12
45
—
—
dB
dB
+
C2
L1
C3
C4
+
35 Vdc
–
Z2
Z5
DUT
Z9
Z12
C1
RF
INPUT
Z1
Z4
Z7
Z8
Z11
Z14
RF
OUTPUT
Z3
Z6
Z10
Z13
C1, C3 — 220 pF Chip Capacitor, 100 mil ATC
C2 — 20
µF/50
Vdc Electrolytic
C4 — 0.1
µF
Erie Redcap
L1, L2 — 2 Turns #18 AWG, 1/8″ ID
Z1–Z14 — Distributed Microstrip Elements, See Photomaster
Board Material — 0.031″ Thick Teflon–Fiberglass,
Board Material —
ε
r = 2.56
Figure 1. 1090 MHz Test Circuit
MRF1002MA MRF1002MB
2
MOTOROLA RF DEVICE DATA
3
f = 0.96 GHz
Pout , OUTPUT POWER (W pk)
1.09 GHz
2
1.215 GHz
1.5
VCC = 35 V
tP = 10
µs
D = 1%
Pout , OUTPUT POWER (W pk)
2.5
3
Pin = 200 mW pk
160 mW pk
2.5
2
120 mW pk
1.5
VCC = 35 V
tP = 10
µs
D = 1%
960
1090
f, FREQUENCY (MHz)
1
1
80 mW pk
0.5
0
40
80
120
Pin, INPUT POWER (mW pk)
160
200
0.5
1215
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
2
tP = 10
µs
D = 1%
f = 1090 MHz
Pin = 200 mW pk
125 mW pk
15
Pout = 2 W pk
VCC = 35 V
tP = 10
µs
D = 1%
Pout , OUTPUT POWER (W pk)
100 mW pk
1
75 mW pk
G PB , POWER GAIN (dB)
40
1.5
14
13
12
0.5
11
0
0
5
10
15
20
25
30
VCC, SUPPLY VOLTAGE (V)
35
10
960
1090
f, FREQUENCY (MHz)
1215
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
+ j50
+ j25
Zin
+ j10
f = 960 MHz
1215
1090
+ j100
+ j150
+ j250
+ j500
0
10
25
50
100
150
250
500
VCC = 35 Vdc,
tP = 10
µs,
D = 1.0%
f
MHz
Zin
Ohms
15.5 + j16.5
15 + j20
14 + j27
ZOL*
Ohms
Pout = 2.0 W pk
20 + j32.5
25 + j34
33.5 + j42.5
ZOL*
Ohms
Pin = 0.2 W pk
25 + j21
31 + j26
37 + j32.5
ZOL* (Pin = 0.2 W pk)
f = 960 MHz
– j10
960
1090
1090
1215
1215
– j150
– j500
– j250
960
1090
1215
ZOL* (Pout = 2 W pk)
– j25
COORDINATES IN OHMS
– j50
– j100
ZOL* = Conjugate of the optimum load impedance into which
ZOL* =
the device output operates at a given output power,
ZOL* =
voltage, and frequency.
Figure 6. Series Equivalent Input/Output Impedance
MOTOROLA RF DEVICE DATA
MRF1002MA MRF1002MB
3
Pout = 2 W pk
VCC = 35 V
tP = 1 ms
D = 10%
f = 1090 MHz
Figure 7. Typical Long Pulse Performance
MRF1002MA MRF1002MB
4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
L
M
4
NOTES:
1. DIMENSION K APPLIES TWO PLACES.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1973.
3
2
K
1
D
DIM
A
B
C
D
E
F
H
J
K
L
M
N
U
BASE
EMITTER
BASE
COLLECTOR
A
H
F
U
8–32 UNC 2A
J
N
C
–T–
SEATING
PLANE
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
6.86
7.62
6.10
6.60
16.26
16.76
4.95
5.21
1.40
1.65
2.67
4.32
1.40
1.65
0.08
0.18
15.24
–––
2.41
2.67
45
_
NOM
4.97
6.22
2.92
3.68
INCHES
MIN
MAX
0.270
0.300
0.240
0.260
0.640
0.660
0.195
0.205
0.055
0.065
0.105
0.170
0.055
0.065
0.003
0.007
0.600
–––
0.095
0.105
45
_
NOM
0.180
0.245
0.115
0.145
E
–B–
0.76 (0.030)
M
T B
M
CASE 332–04
ISSUE D
MRF1002MA
F
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
MIN
6.86
2.93
4.96
2.42
1.27
0.08
15.24
MAX
7.36
3.42
5.20
2.66
1.77
0.17
–––
K
1
3
D
DIM
A
C
MIN
0.270
0.115
0.195
0.095
0.050
0.003
0.600
MAX
0.290
0.135
0.205
0.105
0.070
0.007
–––
2
D
F
H
J
K
H
SEATING
PLANE
A
J
C
STYLE 1:
PIN 1.
2.
3.
4.
BASE
EMITTER
BASE
COLLECTOR
CASE 332A–03
ISSUE D
MRF1002MB
MOTOROLA RF DEVICE DATA
MRF1002MA MRF1002MB
5
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