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5KA12AHE3/54

产品描述DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Transient Suppressor
产品类别分立半导体    二极管   
文件大小82KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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5KA12AHE3/54概述

DIODE 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN, Transient Suppressor

5KA12AHE3/54规格参数

参数名称属性值
厂商名称Vishay(威世)
包装说明O-PALF-W2
针数2
制造商包装代码CASE P600
Reach Compliance Codeunknown
ECCN代码EAR99
最大击穿电压14.7 V
最小击穿电压13.3 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值反向功率耗散5000 W
元件数量1
端子数量2
最高工作温度185 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
极性UNIDIRECTIONAL
最大功率耗散5.5 W
参考标准AEC-Q101
最大重复峰值反向电压12 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL

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5KA10 thru 5KA24A
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 185 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
P600
• Low leakage current
• Low forward voltage drop
• High surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
V
WM
P
PPM
(10 x 1000 μs)
P
D
I
FSM
T
J
max.
10 V to 36 V
5000 W
5.5 W
400 A
185 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection.
MECHANICAL DATA
Case:
P600, molded epoxy over passivated junction
Epoxy meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102D
HE3 suffix for high reliability grade (AEC-Q101 qualified)
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half sine-wave (fig. 5)
Instantaneous forward voltage at 80 A
Operating junction and storage temperature range
SYMBOL
P
PPM (1)
I
PPM (1)
P
D
I
FSM
V
F (2)
T
J
, T
STG
VALUE
minimum 5000
see next table
5.5
400
1.8
- 55 to + 185
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number: 88466
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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