CBCX68 NPN
CBCX69 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
SMALL SIGNAL TRANSISTORS
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CBCX68,
CBCX69 types are complementary silicon
transistor manufactured by epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring high
current capability.
MARKING CODE: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS
(TA=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current-Peak
Base Current
Base Current Peak
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Temperature
SYMBOL
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ,Tstg
Θ
JA
25
20
5.0
1.0
2.0
100
200
1.2
-65 to +150
104
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
fT
VCB=25V
VCB=25V, TA=150°C
VEB=5.0V
IC=10µA
IC=10mA
IE=1.0µA
IC=1.0A, IB=100mA
VCE=10V,IC=5.0mA
VCE=1.0V, IC=1.0A
VCE=10V,IC=500mA
VCE=1.0,IC=500mA
VCE=1.0V, IC=1.0A
VCE=5.0V,IC=10mA, f=20MHz
50
85
60
65
25
20
5.0
TYP
MAX
100
10
10
UNITS
nA
µA
µA
V
V
V
0.5
0.6
1.0
375
V
V
V
MHz
R7 (20-May 2004)
Central
TM
Semiconductor Corp.
CBCX68 NPN
CBCX69 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
SMALL SIGNAL TRANSISTORS
SOT-89 CASE - MECHANICAL OUTLINE
BOTTOM VIEW
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
FULL PART NUMBER
DIMENSIONS
INCHES
MILLIMETERS
MAX MIN
MAX
SYMBOL MIN
A
0.055 0.067 1.40
1.70
B
4°
4°
C
0.014 0.018 0.35
0.46
D
0.173 0.185 4.40
4.70
E
0.064 0.074 1.62
1.87
F
0.146 0.177 3.70
4.50
G
0.090 0.106 2.29
2.70
H
0.028 0.051 0.70
1.30
J
0.014 0.019 0.36
0.48
K
0.017 0.023 0.44
0.58
L
0.059
1.50
M
0.118
3.00
SOT-89 (REV: R4)
R7 (20-May 2004)