DF
N2
020
D-3
PMEG2020CPAS
20 January 2015
20 V, 2 A low VF dual MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted
Device (SMD) plastic package with visible and solderable side pads.
2. Features and benefits
•
•
•
•
•
•
•
•
•
Average forward current I
F(AV)
≤ 2 A
Reverse voltage V
R
≤ 20 V
Low forward voltage V
F
≤ 420 mV
Low reverse current
Reduced Printed-Circuit-Board (PCB) area requirements
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with visible and solderable side pads
Suitable for Automatic Optical Inspection (AOI) of solder joints
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Free-wheeling application
Reverse polarity protection
Low power consumption application
Battery chargers for mobile equipment
LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
Per diode
I
F(AV)
average forward
current
δ = 0.5; f = 20 kHz; T
amb
≤ 80 °C;
square wave
δ = 0.5; f = 20 kHz; T
sp
≤ 140 °C;
square wave
-
-
2
A
[1]
Quick reference data
Parameter
Conditions
Min
-
Typ
-
Max
2
Unit
A
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NXP Semiconductors
PMEG2020CPAS
20 V, 2 A low VF dual MEGA Schottky barrier rectifier
Symbol
V
R
Per diode
V
F
I
R
Parameter
reverse voltage
Conditions
T
j
= 25 °C
I
F
= 2 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
V
R
= 20 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
Min
-
Typ
-
Max
20
Unit
V
forward voltage
reverse current
-
-
385
380
420
1000
mV
µA
[1]
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
anode
diode 1
anode
diode 2
A1
A2
1
2
Simplified outline
3
Graphic symbol
3
common K
cathode
1
2
006aaa438
Transparent top view
DFN2020D-3 (SOT1061D)
6. Ordering information
Table 3.
Ordering information
Package
Name
PMEG2020CPAS
DFN2020D-3
Description
DFN2020D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
Version
SOT1061D
Type number
7. Marking
Table 4.
Marking codes
Marking code
CW
Type number
PMEG2020CPAS
PMEG2020CPAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
20 January 2015
2 / 15
NXP Semiconductors
PMEG2020CPAS
20 V, 2 A low VF dual MEGA Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
F(AV)
reverse voltage
forward current
average forward current
T
j
= 25 °C
T
sp
≤ 135 °C; δ = 1
δ = 0.5; f = 20 kHz; T
amb
≤ 80 °C;
square wave
δ = 0.5; f = 20 kHz; T
sp
≤ 140 °C;
square wave
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
t
p
≤ 1 ms; δ ≤ 0.25
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
-
-
7
9
A
A
-
2
A
[1]
Parameter
Conditions
Min
-
-
-
Max
20
2.8
2
Unit
V
A
A
Per device; one diode loaded
P
tot
T
amb
≤ 25 °C
[2]
[3]
[1]
-
-
-
-
-55
-65
500
960
1800
150
150
150
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
[1]
[2]
[3]
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
2
PMEG2020CPAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
20 January 2015
3 / 15
NXP Semiconductors
PMEG2020CPAS
20 V, 2 A low VF dual MEGA Schottky barrier rectifier
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
0.1
0.05
10
0.02
0
1
10
- 3
0.01
0.75
0.33
0.2
Conditions
in free air
[1][2]
[1][3]
[1][4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
250
130
70
12
Unit
K/W
K/W
K/W
K/W
Per device; one diode loaded
R
th(j-sp)
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
006aac403
2
10
- 2
10
- 1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2020CPAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
20 January 2015
4 / 15
NXP Semiconductors
PMEG2020CPAS
20 V, 2 A low VF dual MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
006aac404
duty cycle =
1
0.5
0.25
0.75
0.33
0.2
0.05
10
0.1
0
1
10
- 3
0.02
0.01
10
- 2
10
- 1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
2
006aac405
duty cycle =
1
0.75
0.33
0.2
0.05
Z
th(j-a)
(K/W)
0.5
0.25
10
0.1
0
0.02
0.01
1
10
- 3
10
- 2
10
- 1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2020CPAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
20 January 2015
5 / 15
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