NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8
W
Features
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
DSS
600 V
R
DS(on)
(MAX) @ 1 A
4.8
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Continuous Drain Current R
qJC
(Note 1)
Continuous Drain Current R
qJC
T
A
= 100°C (Note 1)
Pulsed Drain Current, V
GS
@ 10 V
Power Dissipation R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I
D
= 2.4 A
ESD (HBM)
(JESD 22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H.
≤
30%,
T
A
= 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body
Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
2.4
1.6
10
24
±30
120
2500
4500
NDF
600
2.2
1.4
9
57
NDD
Unit
V
A
A
A
W
V
mJ
V
V
S (3)
N−Channel
D (2)
G (1)
dv/dt
I
S
T
L
T
J
, T
stg
4.5
2.4
260
−55
to 150
V/ns
A
°C
°C
1
2
1
2
3
NDF02N60ZG
TO−220FP
CASE 221D
4
3
NDF02N60ZH
TO−220FP
CASE 221AH
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I
SD
= 2.4 A, di/dt
≤
100 A/ms, V
DD
≤
BV
DSS
, T
J
= +150°C
4
1
1 2
3
NDD02N60Z−1G
IPAK
CASE 369D
2
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
July, 2013
−
Rev. 7
1
Publication Order Number:
NDF02N60Z/D
NDF02N60Z, NDD02N60Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
NDF02N60Z
NDD02N60Z
(Note 3) NDF02N60Z
(Note 4) NDD02N60Z
(Note 3) NDD02N60Z−1
Symbol
R
qJC
R
qJA
Value
4.9
2.2
51
41
80
Unit
°C/W
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
Drain−to−Source Leakage Current
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±20
V
V
GS
= 10 V, I
D
= 1.0 A
V
DS
= V
GS
, I
D
= 50
mA
V
DS
= 15 V, I
D
= 1.2 A
25°C
150°C
I
GSS
R
DS(on)
V
GS(th)
g
FS
C
iss
C
oss
C
rss
Q
g
V
DD
= 300 V, I
D
= 2.4 A,
V
GS
= 10 V
Q
gs
Q
gd
V
GP
R
g
t
d(on)
V
DD
= 300 V, I
D
= 2.4 A,
V
GS
= 10 V, R
G
= 5
W
t
r
t
d(off)
t
f
215
25
4.0
5.0
1.5
3.5
3.0
4.0
4.0
1.7
274
34
7.0
10
2.4
5.3
6.4
4.9
9.0
7.0
15
7.0
325
45
10
16
4.0
8.0
V
W
ns
nC
BV
DSS
DBV
DSS
/
DT
J
I
DSS
600
0.6
1
50
±10
4.8
4.5
mA
W
V
S
pF
V
V/°C
mA
Test Conditions
Symbol
Min
Typ
Max
Unit
Gate−to−Source Forward Leakage
ON CHARACTERISTICS
(Note 5)
Static Drain−to−Source On−Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Output Capacitance (Note 6)
Reverse Transfer Capacitance (Note 6)
Total Gate Charge (Note 6)
Gate−to−Source Charge (Note 6)
Gate−to−Drain (“Miller”) Charge (Note 6)
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
5. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
6. Guaranteed by design.
I
S
= 2.4 A, V
GS
= 0 V
V
GS
= 0 V, V
DD
= 30 V
I
S
= 2.4 A, di/dt = 100 A/ms
V
SD
t
rr
Q
rr
240
0.7
1.6
V
ns
mC
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2
NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
4.0
3.5
I
D
, DRAIN CURRENT (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
5.5 V
5.0 V
5.0
10.0
15.0
20.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
25.0
V
GS
= 10 V
6.5 V
6.0 V
7.0 V
4.0
3.5
I
D
, DRAIN CURRENT (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3
T
J
= 150°C
T
J
= 25°C
T
J
=
−55°C
10
V
DS
= 25 V
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
6.00
5.75
5.50
5.25
5.00
4.75
4.50
4.25
4.00
3.75
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
I
D
= 1 A
T
J
= 25°C
5.25
5.00
4.75
4.50
4.25
4.00
3.75
0.0
V
GS
= 10 V
T
J
= 25°C
10.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
2.3
2.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100
125
I
D
= 1 A
V
GS
= 10 V
BV
DSS
, NORMALIZED BREAKDOWN VOLTAGE (V)
Figure 3. On−Region versus Gate−to−Source
Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
1.15
1.10
1.05
1.00
0.95
0.90
−50
I
D
= 1 mA
150
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. BV
DSS
Variation with Temperature
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3
NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
10
600
550
500
C, CAPACITANCE (pF)
I
DSS
, LEAKAGE (mA)
450
400
350
300
250
200
150
100
50
0.10
0
50 100 150 200 250 300 350 400 450 500 550 600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0
C
rss
5
C
oss
10
15
20
25
30
35
40
45
50
C
iss
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
T
J
= 150°C
1.0
T
J
= 125°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
Q
T
V
DS
V
GS
Q
GS
Q
GD
300
250
200
150
V
DS
= 300 V
I
D
= 2.4 A
T
J
= 25°C
100
50
0
11
0
1
2
3
4
5
6
7
8
9
10
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 300 V
I
D
= 2.4 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
r
t
f
t
d(on)
10.0
Q
g
, TOTAL GATE CHARGE (nC)
1.0
T
J
= 150°C
10
125°C
25°C
−55°C
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.3
0.4
0.5
0.6
0.7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.8
350
0.9
1.0
1.1
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
Figure 11. Diode Forward Voltage versus
Current
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4
NDF02N60Z, NDD02N60Z
TYPICAL CHARACTERISTICS
100
V
GS
v
30 V
SINGLE PULSE
T
C
= 25°C
100
V
GS
v
30 V
SINGLE PULSE
T
C
= 25°C
I
D
, DRAIN CURRENT (A)
10
I
D
, DRAIN CURRENT (A)
100
ms
1 ms
10 ms
dc
10
ms
10
1
1
100
ms
1 ms
10 ms
dc
10
ms
0.1
0.01
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
0.01
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDD02N60Z
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDF02N60Z
10
1
R(t) (C/W)
50% (DUTY CYCLE)
20%
10%
5%
2%
1%
SINGLE PULSE
R
qJC
= 2.2°C/W
Steady State
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
0.1
0.01
1E−06
1E−05
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Case) for NDD02N60Z
100
R(t) (C/W)
10
50% (DUTY CYCLE)
20%
10%
1
5.0%
2.0%
1.0%
0.1
R
qJA
= 41°C/W
Steady State
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
0.01
1E−06
SINGLE PULSE
1E−05
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Ambient) for NDD02N60Z
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