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GBJ2510

产品描述BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小217KB,共3页
制造商CDIL
官网地址http://www.cdilsemi.com
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GBJ2510概述

BRIDGE RECTIFIER DIODE

桥式整流二极管

GBJ2510规格参数

参数名称属性值
状态ACTIVE
二极管类型桥式整流二极管

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIERS
GBJ25005 - GBJ2510
GBJ
PLASTIC PACKAGE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ºC Ambient temperature unless specified otherwise. Single phase, half wave, 60Hz
resistive or inductive load. For capacitive load, derate current by 20%
DESCRIPTION
Maximum Peak Repetitive Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
with heat sink at T
c
=100ºC
Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Forward Drop Per Element Voltage at
I
F
=12.5A DC and 25ºC
Maximum DC Reverse Current at T
a
=25
o
C
at Rated DC Blocking Voltage at T
a
=125 C
Typical Junction Capacitance
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
o
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
*C
J
**R
th (j-c)
T
J,
T
stg
GBJ GBJ GBJ GBJ GBJ
25005 2501 2502 2504 2506
400 600
50
100 200
35
50
70
100
140
200
280
400
25
420
600
GBJ
2508
800
560
800
GBJ
2510
1000
700
1000
UNIT
V
V
V
A
300
1.05
10
500
85
0.6
- 55 to +150
A
V
µA
µA
pF
ºC/W
ºC
*Measured at 1 MHz and applied reverse voltage of 4.0 V
**Thermal Resistance from Junction to Case with Device Mounted on 300mm x 300mm x 1.6mm Cu Plate Heatsink
GBJ25005_2510Rev031005E
Continental Device India Limited
Data Sheet
Page 1 of 3

GBJ2510相似产品对比

GBJ2510 GBJ2501 GBJ2508 GBJ25005 GBJ2502 GBJ2506
描述 BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

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