VDI 25-12P1
VID 25-12P1
VII 25-12P1
VIO 25-12P1
IGBT Modules
in ECO-PAC 2
Short Circuit SOA Capability
Square RBSOA
Preliminary data sheet
VIO
IJK 10
I
C25
= 30 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.6 V
VII
P9
L9
X13
VID
IK10
VDI
AC1
X15
SV18
L9
NTC
X15
T16
X16
PS18
A1
S18
LMN 9
E2
G10
NTC
X15
L9
B3
Pin arangement see outlines
K10
F1
NTC
X16
AC1
X16
X18
IK10
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 82
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
± 20
V
de
30
21
A
A
35
A
V
CES
10
µs
W
130
2.6
2.9
3.3
6.5
0.9
3.7
100
100
75
500
70
2.7
2.1
1
1.92
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.96 K/W
K/W
ne
4.5
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 82
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
w
r
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.6 mA; V
GE
= V
CE
t
V
CE
= V
CES
;
fo
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
No
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 17.5 A
V
GE
= 15/0 V; R
G
= 82
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
si
V
gn
Features
Advantages
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
• space and weight savings
• reduced protection circuits
• leads with expansion bend for stress relief
Typical Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Recommended replacement:
Please contact your local
sales office
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1-4
0650
VDI 25-12P1
VID 25-12P1
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 17.5 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 15 A; di
F
/dt = 400 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
VII 25-12P1
VIO 25-12P1
VII
Maximum Ratings
26
17
A
A
Characteristic Values
min.
typ. max.
2.48
1.84
16
130
4.6
2.79
V
V
A
ns
2.3 K/W
K/W
B3
Temperature Sensor NTC
Symbol
R
25
B
25/50
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting torque (M4)
Max. allowable acceleration
Conditions
Conditions
Maximum Ratings
-40...+150
-40...+150
Conditions
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
r
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
ne
11.2
11.2
1.5 - 2.0
14 - 18
50
w
24
VID
Characteristic Values
min. typ. max.
mm
mm
g
VDI
Data according to IEC 60747 and refer to a single
transistor or diode unless otherwise stated.
No
t
fo
de
°C
°C
3000
V~
Nm
lb.in.
m/s
2
si
2-4
0650
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
gn
VIO
Characteristic Values
min. typ. max.
VDI 25-12P1
VID 25-12P1
50
A
40
V
GE
= 17V
15V
13V
VII 25-12P1
VIO 25-12P1
50
A
40
30
11V
V
GE
= 17V
15V
13V
I
C
T
VJ
= 25°C
11V
I
C
T
VJ
= 125°C
30
20
10
0
0
1
2
3
4
V
CE
20
10
0
9V
9V
25T120
25T120
5
6
V
7
0
1
2
3
4
5
V
CE
6
V
7
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
50
A
40
I
C
V
CE
= 20V
50
40
A
30
20
10
30
20
T
VJ
= 125°C
T
VJ
= 25°C
si
0
1
t
rr
T
VJ
= 125°C
V
R
= 600V
I
F
= 15A
I
RM
I
F
gn
T
VJ
= 125°C
T
VJ
= 25°C
25T120
10
0
4
6
8
10
12
V
GE
25T120
w
de
0
14
V
16
2
V
F
3
V
4
Fig. 3 Typ. transfer characteristics
ne
Fig. 4 Typ. forward characteristics of
free wheeling diode
r
20
V
50
40
A
I
RM
200
160
ns
120
80
40
25T120
fo
15
V
GE
t
rr
10
t
V
CE
= 600V
I
C
= 15A
30
20
10
25T120
5
No
0
0
20
40
60
Q
G
0
0
200
400
600
-di/dt
0
80
nC
100
800
A/μs
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
0650
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3-4
VDI 25-12P1
VID 25-12P1
6
mJ
E
on
120
ns
t
d(on)
80
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
VII 25-12P1
VIO 25-12P1
600
ns
400 t
E
off
6
mJ
t
E
off
t
d(off)
4
4
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
t
r
2
E
on
40
2
200
t
f
0
0
10
20
I
C
25T120
0
0
0
10
20
I
C
25T120
0
30
A
30 A
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
2,0
mJ
E
off
3
mJ
E
on
gn
V
CE
= 600V
V
GE
= ±15V
I
C
= 15A
T
VJ
= 125°C
E
on
t
d(on)
t
r
150
ns
100
t
800
ns
t
d(off)
600
t
2
1
de
V
CE
= 600V
V
GE
= ±15V
50
I
C
= 15A
T
VJ
= 125°C
25T120
1,0
si
0
20
40
60
80
single pulse
E
off
1,5
400
0,5
200
t
f
w
0
0
20
40
60
80
100
R
G
120
Ω
140
0
0,0
100
R
G
25T120
120
Ω
140
0
Fig. 9 Typ. turn on energy and switching
ne
10
K/W
Z
thJC
1
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
40
A
I
CM
r
30
fo
diode
IGBT
0,1
0,01
0,001
20
10
No
R
G
= 82
Ω
T
VJ
= 125°C
t
25T120
0
0
200
400
600
V
CE
800 1000 1200 1400
V
0,0001
0,00001 0,0001 0,001
VDI...25-12P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
4-4
0650
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