SSE40N20-180P
Elektronische Bauelemente
34A , 200V , R
DS(ON)
180 mΩ
Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
D
C
TO-220P
B
R
T
FEATURES
Low R
DS(on)
provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
TO-220P saves board space.
Fast Switch Speed.
High performance trench technology.
G
E
A
S
F
H
I
J
K
L
U
X
M
P
APPLICATION
DC-DC converters and power management such as
computers, printers, and power supplies .
Q
N
O
V
Q
W
1 2 3
N-Channel
D
2
REF.
A
B
C
D
E
F
G
H
I
J
K
L
Millimeter
Min.
Max.
7.90
8.10
9.45
9.65
9.87
10.47
-
11.50
1.06
1.46
2.60
3.00
6.30
6.70
8.35
8.75
14.7
15.3
1.60 Typ.
1.10
1.30
1.17
1.37
REF.
M
N
O
P
Q
R
S
T
U
V
W
X
Millimeter
Min.
Max.
-
1.50
0.75
0.95
0.66
0.86
13.50
14.50
2.44
3.44
3.50
3.70
1.15
1.45
4.30
4.70
-
2.7
1.89
3.09
0.40
0.60
2.60
3.60
G
1
S
3
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
A
=25°C
I
D
I
DM
I
S
T
A
=25°C
P
D
T
J
, T
STG
Ratings
200
±20
34
80
20
300
-55~150
Unit
V
V
A
A
A
W
°C
Continuous Source Current (Diode Conduction)
Power Dissipation
1
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
Maximum Junction to Case
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
1
R
θJA
R
θJC
62.5
1
°C
/ W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Mar-2013 Rev. A
Page 1 of 4
SSE40N20-180P
Elektronische Bauelemente
34A , 200V , R
DS(ON)
180 mΩ
Ω
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Symbol
Min.
Typ.
Max.
Unit
V
nA
µA
A
m
S
V
Teat Conditions
V
DS
=V
GS
, I
D
=250µA
V
DS
=0, V
GS
=±20V
V
DS
=160V, V
GS
=0
V
DS
=160V, V
GS
=0, T
J
=55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=10A
V
GS
=5.5V, I
D
=8A
V
DS
=15V, I
D
=10A
I
S
=10A, V
GS
=0
Static
V
GS(th)
I
GSS
I
DSS
I
D(on)
1
1
-
-
-
34
-
-
-
-
-
-
-
-
-
25
0.86
2
-
±100
1
25
-
180
340
-
-
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
R
DS(ON)
g
fs
V
SD
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
7
3.1
3.3
9
14
33
26
948
80
54
-
-
-
-
-
-
-
-
-
-
pF
nS
nC
V
DS
=100V,
V
GS
=4.5V,
I
D
=10A
V
DS
=100V, V
GEN
=10V,
R
L
=10 , I
D
=10A, R
GEN
=6
V
DS
=15V,
V
GS
=0,
f=1 MHz
Notes:
1 Pulse test：PW
≦
300
µs
duty cycle
≦
2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Mar-2013 Rev. A
Page 2 of 4
SSE40N20-180P
Elektronische Bauelemente
34A , 200V , R
DS(ON)
180 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Mar-2013 Rev. A
Page 3 of 4
SSE40N20-180P
Elektronische Bauelemente
34A , 200V , R
DS(ON)
180 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Mar-2013 Rev. A
Page 4 of 4
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