supply voltage change, load change, shock and vibration.
Contact SiTime for ±25 PPM and ±30 PPM support for Indus-
trial temperature.
Current Consumption
Standby Current
Idd
I_std
Duty Cycle
Rise/Fall Time
Output Voltage High
DC
Tr, Tf
VOH
No load condition, f = 20 MHz, Vdd = 1.8 V
No load condition, f = 20 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
ST = GND, Vdd = 1.8 V, Output is Weakly Pulled Down
ST = GND, Vdd = 2.5 or 2.8 V, Output is Weakly Pulled Down
ST = GND, Vdd = 3.3 V, Output is Weakly Pulled Down
All Vdds. f <= 75 MHz
All Vdds. f > 75 MHz
20% - 80% Vdd=2.5V, 2.8V or 3.3V, 15pf load
20% - 80% Vdd=1.8V, 15pf load
IOH = -4 mA (Vdd = 3.3 V)
IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOH = -2 mA (Vdd = 1.8 V)
IOL = 4 mA (Vdd = 3.3 V)
IOL = 3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOL = 2 mA (Vdd = 1.8 V)
At maximum frequency and supply voltage. Contact SiTime for
higher output load option
Pin 1, OE or ST
Pin 1, OE or ST
Measured from the time Vdd reaches its rated minimum value
Measured from the time ST pin crosses 50% threshold
f = 75 MHz, Vdd = 1.8 V
f = 75 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz, VDD =
2.5V, 2.8V, or 3.3V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz,
VDD = 1.8V
Output Voltage Low
VOL
–
–
10%
Vdd
Output Load
Input Voltage High
Input Voltage Low
Startup Time
Resume Time
RMS Period Jitter
RMS Phase Jitter (random)
Ld
VIH
VIL
T_osc
T_resume
T_jitt
T_phj
–
70%
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.6
0.8
15
–
30%
10
3.5
5.5
4.0
–
–
pF
Vdd
Vdd
ms
ms
ps
ps
ps
ps
SiTime Corporation
Rev. 1.41
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised January 7, 2009
SiT8003
Low Power Programmable Oscillator
1 - 110 MHz
Specifications (cont.)
Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed
within the operational specifications, not at absolute maximum ratings.
Absolute Maximum Table
Parameter
Storage Temperature
VDD
Electrostatic Discharge
Theta JA ( with copper plane on VDD and GND)
Theta JC (with PCB traces of 0.010 inch to all pins)
Soldering Temperature (follow standard Pb free soldering guidelines)
Number of Program Writes
Program Retention over -40 to 125 ° Process, VDD (0 to 3.65V)
C,
Min.
-65
-0.5
–
–
–
–
–
–
Max.
150
+3.65
6000
75
24
260
1
1,000+
Unit
°
C
V
V
°
C/W
°
C/W
°
C
NA
years
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensibility Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°
C
Rev. 1.41
Page 2 of 4
www.sitime.com
SiT8003
Low Power Programmable Oscillator
1 - 110 MHz
Dimensions, Pin Description and Land Pattern
[1]
Dimensions
(Unit: mm)
2.5 x 2.0 x 0.75 mm
2.5 ± 0.10
1.00
Pin #1 Functionality
OE
H or Open
[2]
Recommended Land Pattern
(Unit: mm)
1.9
[3]
; specified frequency output
ST
L: output is high impedance
H or Open; specified frequency output
2.0 ± 0.10
0.5
Pin Map
Pin
Connection
OE/ST
GND
CLK
VDD
1
2
3
4
1.5
YXXXX
1.1
L: output is low level (weak pull down)
0.75
0.75 ± 0.05
1.1
Dimensions
(Unit: mm)
3.2 x 2.5 x 0.75 mm
3.2 ± 0.15
[1]
Pin #1 Functionality
OE
H or Open
2.1
[2]
Recommended Land Pattern
(Unit: mm)
2.2
[3]
; specified frequency output
ST
L: output is high impedance
H or Open; specified frequency output
2.5 ± 0.15
0.9
L: output is low level (weak pull down)
0.7
Pin
0.9
Connection
OE/ST
GND
CLK
VDD
1
2
3
4
0.75 ± 0.05
1.4
Dimensions
(Unit: mm)
5.0 x 3.2 x 0.75 mm
5.0 ± 0.15
[1]
Pin #1 Functionality
H or Open
OE
[3];
specified frequency output
[2]
Recommended Land Pattern
(Unit: mm)
2.39
3.2 ± 0.15
0.8
L: output is high impedance
ST
H or Open; specified frequency output
L: output is low level (weak pull down)
2.54
YXXXX
1.1
Pin
1
OE/ST
GND
CLK
VDD
Connection
0.75 ± 0.05
1.15
2
3
4
1.5
[1]
Dimensions
(Unit: mm)
7.0 x 5.0 x 0.90 mm
7.0 ± 0.15
5.08
1.7
5.0 ± 0.15
[2]
Recommended Land Pattern
(Unit: mm)
Pin #1 Functionality
OE
H or Open
[3]
; specified frequency output
ST
L: output is high impedance
H or Open; specified frequency output
5.08
2.6
2.1
L: output is low level (weak pull down)
YXXXX
1.1
Pin Map
Pin
Connection
OE/ST
GND
CLK
VDD
1
2
3
4
3.81
1.6
2.2
Pin Map
2.2
1.2
Pin Map
1.9
1.0
Notes:
1. Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
2. A capacitor of value 0.1µF between Vdd and GND is recommended.
3. In 1.8V mode, a resistor of <100 k between OE pin and VDD is recommended.
Rev. 1.41
0.90 ± 0.10
1.4
Page 3 of 4
www.sitime.com
2.0
4#
1#
2#
3#
3#
2#
XXXXY
1#
4#
SiT8003
Low Power Programmable Oscillator
1 - 110 MHz
Part No. Guide- How to Order
SiT8003AC -14-18E - 123.12345T
Packaging:
Part Family
“SiT8003”
Revision Letter
“A” is the revision
Temperature Range
“C” Commercial, -20 to 70
o
C
“I” Industrial, -40 to 85
o
C
Voltage Supply
Output Driver Strength
[4]
“
-
” Default
“18” for 1.8 V ±10%
“25” for 2.5 V ±10%
“28” for 2.8V ±10%
“33” for 3.3 V ±10%
Frequency Tolerance
“2” for ±25 PPM
“3” for ±50 PPM
“4” for ±100 PPM
“8” for ±30 PPM
Feature Pin
“E” for Output Enable
“S” for Standby
“T”: Tape & Reel, 3K reel
“Y”: Tape & Reel, 1K reel
Blank for Bulk
Frequency
1.00000 to 110.00000 MHz
Package Size
“1” 2.5 x 2.0 mm
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“4” 7.0 x 5.0 mm
Note:
4. Contact SiTime for different drive strength options for driving higher loads or reducing EMI.
a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident,
(iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer:
SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing
or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any sitime product and any product documentation. products sold
by sitme are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. all sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to
the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be
随着半导体技术的不断进步（按照摩尔定律），MCU内部集成的逻辑功能外设越来越多，存储器也越来越大。消费者对于汽车节能（经济和法规对排放的要求）型、舒适性、互联性、安全性（功能安全和信息安全）的要求越来越高，特别是近年来新能源电动车、车联网和自动驾驶技术的兴起，更大大加速了汽车电子技术的发展。汽车电子ECU（Electronic Control Unit--电控单元）集成的功能日益复杂，为了应对软...[详细]
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
