MB2S thru MB6S
Vishay Semiconductors
formerly General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
Reverse Voltage
TO-269AA (MBS)
0.029 (0.74)
0.017 (0.43)
200 to 600V
Forward Current
0.5A
Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)
0.161 (4.10)
0.144 (3.65)
0.272 (6.90)
0.252 (6.40)
Dimensions in inches
and (millimeters)
0.272 MAX.
(6.91 MAX.)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0-8
o
0.106 (2.70)
0.090 (2.30)
0.030 MIN.
(0.76 MIN.)
0.205 (5.21)
0.195 (4.95)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
0.105(2.67)
0.095(2.41)
0.114 (2.90)
0.094 (2.40)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
Mechanical Data
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• This series is UL recognized under Component Index,
file number E54214
• Glass passivated chip junctions
• High surge overload rating: 35A peak
• Saves space on printed circuit boards
•
High temperature soldering guaranteed: 260°C/10 seconds.
A
Case:
Molded plastic body over passivated junctions
Terminals:
Plated leads solderable
per MIL-STD-750, Method 2026
Mounting Position:
Any
Weight:
0.0078 oz., 0.22 g
Packaging codes-options:
80-3K per 13" Paper Reel, 36K/carton
Maximum Ratings and Thermal Characteristics
(T
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
(see Fig. 1)
on glass-epoxy P.C.B.
on aluminum substrate
Peak forward surge current 8.3msec single half sine-wave
superimposed on rated load (JEDEC Method)
Rating for fusing (t < 8.3ms)
Typical thermal resistance per leg
Operating junction and storage temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
R
ΘJA
R
ΘJA
R
ΘJL
T
J
, T
STG
= 25°C unless otherwise noted)
MB2S
2
200
140
200
MB4S
4
400
280
400
0.5
(1)
0.8
(2)
35
5.0
85
(1)
70
(2)
20
(1)
–55 to +150
MB6S
6
600
420
600
Unit
V
V
V
A
A
A
2
sec
°C/W
°C
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Max. instantaneous forward voltage drop per leg at 0.4A
Maximum DC reverse current at
T
A
= 25°C
rated DC blocking voltage per leg
T
A
= 125°C
Typical junction capacitance per leg at 4.0V, 1 MHz
V
F
I
R
C
J
1.0
5.0
100
13
V
µA
pF
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
Document Number 88661
29-Jul-03
www.vishay.com
1
MB2S thru MB6S
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 - Derating Curve for Output
Rectified Current
0.8
35
Average Forward Rectified Current (A)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Peak Forward Surge Current (A)
30
25
20
15
10
5.0
0
1 Cycle
f = 50 Hz
T
A
= 40°C
Single Half Sine-Wave
(JEDEC Method)
f = 60 Hz
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
Glass
Epoxy
P.C.B.
Aluminum Substrate
Resistive or Inductive Load
60
80
100
120 140
160
1
10
100
Ambient Temperature (°C)
Number of Cycles
Fig. 3 - Typical Forward Voltage
Characteristics Per Leg
Instantaneous Forward Current (A)
10
100
Fig. 4 - Typical Reverse Leakage
Characteristics Per Leg
Instantaneous Reverse Leakage
Current (µA)
T
J
= 150°C
10
T
J
= 125°C
1
T
J
= 25°C
1
0.1
Pulse Width = 300µs
1% Duty Cycle
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capactitance
Per Leg
30
Junction Capacitance (pF)
25
20
15
10
5.0
0
0.1
1
10
T
J
= 25°C
f = 1 MHz
Vsig = 50mVp-p
100 200
Reverse Voltage (V)
www.vishay.com
2
Document Number 88661
29-Jul-03
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