BTA08 BW/CW
BTB08 BW/CW
SNUBBERLESS TRIACS
.
.
.
.
FEATURES
HIGH COMMUTATION : (dI/dt)c > 7A/ms
without snubber
HIGH SURGE CURRENT : I
TSM
= 80A
V
DRM
UP TO 800V
BTA Family :
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
The BTA/BTB08 BW/CW triac family are high per-
formance glass passivated chips technology.
The SNUBBERLESS™ concept offer suppression
of RC network and it is suitable for application
such as phase control and static switching on in-
ductive or resistive load.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2t value
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Parameter
BTA
BTB
ITSM
A1
A2
G
TO220AB
(Plastic)
Value
Tc = 90
°C
Tc = 95
°C
tp = 8.3 ms
tp = 10 ms
85
80
32
20
100
- 40 to + 150
- 40 to + 125
260
8
Unit
A
A
I2t
dI/dt
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
A2s
A/µs
Tstg
Tj
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
400
°C
°C
°C
Symbol
BTA / BTB08-... BW/CW
600
600
700
700
800
800
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
400
V
March 1995
1/5
BTA08 BW/CW / BTB08 BW/CW
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
BTA
BTB
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA
BTB
Parameter
Value
60
4.4
3.3
3.3
2.5
°C/W
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IGM = 4A (tp = 20
µs)
VGM = 16V (tp = 20
µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
BW
IGT
VD=12V
(DC)
RL =33Ω
Tj=25°C
I-II-III
MIN
MAX
VGT
VGD
tgt
IL
VD=12V
(DC)
RL =33Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
I-II-III
I-II-III
I-II-III
I-III
II
I-III
II
IH *
VTM *
IDRM
IRRM
dV/dt *
IT= 500mA gate open
ITM= 11A tp= 380µs
VDRM
VRRM
Rated
Rated
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
MAX
MIN
TYP
TYP
TYP
MAX
MAX
MAX
MAX
MAX
MAX
MIN
TYP
Tj=125°C
MIN
TYP
* For either polarity of electrode A2 voltage with reference to electrode A1.
Unit
CW
1
35
1.5
0.2
2
V
V
µs
-
-
50
80
35
1.75
0.01
2
mA
V
mA
mA
mA
2
50
VD=VDRM R L=3.3kΩ
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
40
80
-
-
50
Linear slope up to VD =67%VDRM
gate open
Without snubber
500
750
7
14
250
500
4.5
9
V/µs
(dI/dt)c *
A/ms
2/5
BTA08 BW/CW / BTB08 BW/CW
ORDERING INFORMATION
Package
IT(RMS)
A
BTA
(Insulated)
8
VDRM / VRRM
V
400
600
700
800
BTB
(Uninsulated)
400
600
700
800
Sensitivity Specification
BW
X
X
X
X
X
X
X
X
CW
X
X
X
X
X
X
X
X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
Fig.4 : RMS on-state current versus case temperature.
3/5
BTA08 BW/CW / BTB08 BW/CW
Fig.5 : Relative variation of hermal impedance versus
pulse duration.
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h(j-a)
tp( s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
≤
10ms, and
corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values).
4/5
BTA08 BW/CW / BTB08 BW/CW
PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
A
G
I
D
B
J
H
F
O
P
L
C
M
=
N
=
A
B
C
D
F
G
H
I
J
L
M
N
O
P
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.20
10.50
0.401
0.413
14.23
15.87
0.560
0.625
12.70
14.70
0.500
0.579
5.85
6.85
0.230
0.270
4.50
0.178
2.54
3.00
0.100
0.119
4.48
4.82
0.176
0.190
3.55
4.00
0.140
0.158
1.15
1.39
0.045
0.055
0.35
0.65
0.013
0.026
2.10
2.70
0.082
0.107
4.58
5.58
0.18
0.22
0.80
1.20
0.031
0.048
0.64
0.96
0.025
0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
©
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
