, O
ne..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MAC97 Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
Inexpensive TO-92 package which is readly adaptable for use in
automatic insertion equipment.
• One-piece,Injection-Molded Package
• Blocking Village to 600 \6lts
• Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations ofTriggcr Sources, and especially for Circuits
that Source date Drives
• All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
• Device Marking: Device Type, e.g., MAC97A4, Date Code
TRIACS
0.8 AMPERE RMS
200 thru 600 VOLTS
MT2
o
G
MT1
MAXIMUM RATINGS
Rating
(Tj = 25"C unless otherwise noted)
Symbol
VDRM
VRRM
value
Unit
Volts
TO-92
Peak Repetitive Off-State Voltage
(Tj = -40to+100"C) (Motel)
Sire Wave 50 to 60 Hz, Gate Open
MAC97A4
MAC97A6
MAC97-8,
MAC97A8
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(T
C
= +50"C)
Peak Non-Repetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(T
C
=110"C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Voltage
(t -= 2.0 s, T
c
= +80"C)
Peak Gate Power
(t -= 2.0 s, T
c
= +80"C)
Average Gate Power
(T
c
= 80"C, t * 8.3 ms)
Peak Gate Current
( t * 2.0)JS. T
c
= +80"C)
Operating Junction Temperature Range
Storage Temperature Range
PIN ASSIGNMENT
200
400
600
h~(RMS)
0.6
Amp
1
2
3
Main Terminal 1
Gate
Main Terminal 2
ORDERING INFORMATION
'TSM
8.0
Amps
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Preferred
devices are recommended choices for future use
and best overal! value
I
2
t
VGM
PGM
PG(AV)
0.26
A^s
5.0
Volts
Watts
Watt
Amp
5.0
0.1
IGM
Tj
Tstg
1.0
-4010 + 100
-40 t o * 150
"C
"C
1 • VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MAC97 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
ROJC
RSJA
T
L
Max
75
200
260
Unit
'c/w
-cm
c
ELECTRICAL CHARACTERISTICS
= 25 C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
| Min
iyp
-
—
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
. V
RRM
; Gate Open)
J
Tj = 25 C
!DRM,
!RRM
-
10
100
M
A
M
A
ON CHARACTERISTICS
Peak On-State Voltage
OTM
=
±
.85 A Peak; Pulse Width * 2.0 ms, Duty Cycle
^
2.0%)
Gate Trigger Current (Continuous dc)
(VD
-
12 Vdc, R
L
= 100 Ohms)
MT2
+ ) G(+)
MT2
+
).G(-)
MT2
-)
G(-)
MT2
-).G(+)
MT2
+), G(+)
MT2
+ )
G(-)
MT2
MT2
VTM
IGT
MAC97-8 Device
—
1.9
Volts
mA
—
—
—
—
—
—
10
10
10
10
5.0
5.0
5.0
MAC97A4,A6,A8 Devices
—
—
—
—
-j.G(-)
70
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 Ohms)
MT2i +), G(+) All Types
MT2
+ ),G(-) All Types
MT2
-),G(-)AIITypes
MT2
-),G( + )AII Types
Gate Non-Trigger Voltage
(V
D
= 12 V RL = 100 Ohms, Tj = 110 "C)
All Four Quadrants
Holding Current
(V
D
=
12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(V
D
=
Rated V
DRM
, I
TM
= 1.0 A pk, !
G
= 25mA)
DYNAMIC CHARACTERISTICS
VGT
—
—
-
VGD
0.1
.66
.77
2.0
2.0
Volts
.84
.88
-
2.0
2.5
_
Volts
IH
tgt
_
-
1.5
2.0
10
_
mA
M
s
Critical Rate-of-Rise of Commutation Voltage
(V
D
= Rated VDRM. ITM = -84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, TC = 50 C)
Critical Rate of Off-State voltage
(V
D
= Rated V
DR
M. T
c
= 110 C, Gate Open. Exponential Waveform
dV/dt(c)
-
5.0
-
V/us
dv/dt
-
25
-
V/us
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