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SGB30N60
Fast IGBT in NPT-technology
•
75% lower
E
off
compared to previous generation
combined with low conduction losses
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
•
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
•
Qualified according to JEDEC
1
for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SGB30N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 30 A,
V
CC
= 50 V,
R
GE
= 25
Ω
,
start at
T
j
= 25°C
Short circuit withstand time
2
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
T
j
,
T
stg
-55...+150
260
°C
P
tot
250
W
t
SC
10
µs
V
GE
E
AS
±20
165
V
mJ
I
Cpuls
-
Symbol
V
CE
I
C
41
30
112
112
Value
600
Unit
V
A
V
CE
600V
I
C
30A
V
CE(sat)
2.5V
T
j
150°C
Marking
G30N60
Package
PG-TO-263-3-2
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
05.03.2009
SGB30N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
1)
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
=0 V,
I
C
=500
µA
V
CE(sat)
V
G E
= 15 V,
I
C
=30A
T
j
= 25°C
T
j
= 150
°C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
=700
µA,V
C E
=V
G E
V
C E
= 60 0 V,V
G E
= 0 V
T
j
= 25°C
T
j
= 150
°C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
I
C(SC)
V
G E
=15V,t
S C
≤1
0
µs
V
C C
≤
60 0V,
T
j
≤
150
°C
-
300
-
A
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
=25V,
V
G E
=0 V,
f=1MHz
V
C C
= 48 0 V,
I
C
=30A
V
G E
=15V
-
7
-
nH
-
-
-
-
1600
150
92
140
1920
180
110
182
nC
pF
I
GES
g
fs
V
C E
=0 V,V
G E
=20V
V
C E
=20V,
I
C
=30A
-
-
-
-
-
-
-
20
40
3000
100
-
nA
S
1.7
-
3
2.1
2.5
4
2.4
3.0
5
µA
600
-
-
V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
R
thJA
40
R
thJC
0.5
K/W
Symbol
Conditions
Max. Value
Unit
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
05.03.2009
1)
SGB30N60
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25°C ,
V
C C
= 40 0 V,
I
C
=30A,
V
G E
= 0 /1 5 V,
R
G
= 11Ω ,
L
σ
1 )
=1 80nH ,
C
σ
1 )
=9 00p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
44
34
291
58
0.64
0.65
1.29
53
40
349
70
0.77
0.85
1.62
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 150
°C
V
C C
= 40 0 V,
I
C
=30A,
V
G E
= 0 /1 5 V,
R
G
= 1 1Ω ,
L
σ
1 )
=1 80nH ,
C
σ
1 )
=9 00p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
44
34
324
67
0.98
0.92
1.90
53
40
389
80
1.18
1.19
2.38
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.3
05.03.2009
SGB30N60
160A
140A
120A
I
c
100A
t
p
=4
µ
s
15
µ
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
100A
80A
T
C
=80°C
60A
40A
20A
0A
10Hz
T
C
=110°C
10A
50
µ
s
200
µ
s
1ms
1A
DC
I
c
0.1A
1V
10V
100V
100Hz
1kHz
10kHz
100kHz
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 11Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
300W
60A
250W
50A
Limited by bond wire
200W
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
POWER DISSIPATION
40A
150W
30A
100W
20A
P
tot
,
50W
10A
0W
25°C
0A
25°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
4
Rev. 2.3
05.03.2009
FPGA/CPLD
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